US 6,982,908 B2 | ||
Magnetic random access memory device capable of providing a constant current to a reference cell | ||
Woo Yeong Cho, Suwon (Korea, Republic of) | ||
Assigned to Samsung Electronics Co., Ltd., (Korea, Republic of) | ||
Filed on Jul. 22, 2003, as Appl. No. 10/625,025. | ||
Claims priority of application No. 10-2002-0045784 (KR), filed on Aug. 02, 2002. | ||
Prior Publication US 2004/0022097 A1, Feb. 05, 2004 | ||
Int. Cl. G11C 11/14 (2006.01); G11C 11/15 (2006.01); G11C 7/14 (2006.01) |
U.S. Cl. 365—189.06 | 18 Claims |
1. A memory device comprising:
a first memory array having a plurality of first memory cells, wherein each one of the plurality of first memory cells is
arranged at an intersection of at least one of a plurality of wordlines, at least one of a plurality of bitlines, and at least
one of a plurality of digit lines;
a second memory array having a plurality of second memory cells, wherein each one of the plurality of second memory cells
is arranged at an intersection of at least one of the plurality of wordlines, at least one of a first reference bitline and
a second reference bitline of the plurality of bitlines, and at least one of the plurality of digit lines;
a current providing unit for providing a second current to the first and second reference bitlines in response to a reference
voltage; and
a sense amplifier for comparing a first current flowing through one of the plurality of bitlines with the second current,
wherein each one of the plurality of second memory cells set to a first logic state is coupled to the first reference bitline
and each one of the plurality of second memory cells set to a second logic state is coupled to the second reference bitline.
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