US 6,982,205 B2
Method and manufacturing a semiconductor device having a metal-insulator-metal capacitor
Jae-Hyun Joo, Seoul (Korea, Republic of); and Wan-Don Kim, Kyungki-do (Korea, Republic of)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (Korea, Republic of)
Filed on Jan. 22, 2002, as Appl. No. 10/55,270.
Claims priority of application No. 2001-45487 (KR), filed on Jul. 27, 2001.
Prior Publication US 2003/0022415 A1, Jan. 30, 2003
Int. Cl. H01L 21/8242 (2006.01); H01L 21/469 (2006.01); H01L 21/321 (2006.01)
U.S. Cl. 438—393 23 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, comprising the steps of:
forming a lower electrode on a substrate using a source having carbon;
subjecting the lower electrode to a pre-annealing for removing carbon remaining in the lower electrode, wherein the pre-annealing is a thermal annealing under a selected atmosphere;
forming a capacitor dielectric layer on the pre-annealed lower electrode, wherein the capacitor dielectric layer includes tantalum oxide (Ta2O5);
subjecting the tantalum oxide (Ta2O5) capacitor dielectric layer to a temperature that is lower than a conventional crystallizing temperature of tantalum oxide dielectric material until crystallization of the tantalum oxide capacitor dielectric occurs; and
forming an upper electrode on the capacitor dielectric layer,
wherein the lower electrode is formed of metal.