US 6,983,003 B2 | ||
III-V nitride semiconductor laser device | ||
Masayuki Sonobe, Kyoto (Japan); Yoshinori Kimura, Tsurugashima (Japan); and Atsushi Watanabe, Tsurugashima (Japan) | ||
Assigned to Rohm Co., Ltd., Kyoto (Japan); and Pioneer Corporation, Tokyo (Japan) | ||
Filed on Sep. 18, 2001, as Appl. No. 9/954,221. | ||
Claims priority of application No. 2000-283393 (JP), filed on Sep. 19, 2000. | ||
Prior Publication US 2002/0071465 A1, Jun. 13, 2002 | ||
Int. Cl. H01S 5/00 (2006.01) |
U.S. Cl. 372—45 | 7 Claims |
1. A III-V nitride semiconductor laser device comprising:
an n-side AlGaN cladding layer;
an n-side GaN guide layer formed over the n-side AlGaN cladding layer;
an active layer formed over the n-side guide layer;
a p-side InyGa1−yN(0<y≤1) guide layer formed over the active layer; and
a p-side AlGaN cladding layer formed over the p-side guide layer,
wherein a refractive index of said p-side guide layer being larger than that of said n-side guide layer.
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