1. A chemical vapor deposition method of forming a barium strontium titanate-comprising dielectric layer having a varied concentration
of barium and strontium within the layer, comprising:
providing barium and strontium to a substrate by flowing at least one metal organic precursor to the substrate, and providing
titanium to the substrate, and flowing a constant composition oxidizer stream to the substrate, under conditions effective
to deposit a barium strontium titanate-comprising dielectric layer on the substrate; the barium and strontium being provided
to the substrate during all of the deposit of said layer at a substantially constant atomic ratio of barium to strontium;
and
during said deposit, changing a rate of flow of the constant composition oxidizer stream to the substrate at least once to
effect a change in relative atomic concentration of barium to strontium within the deposited barium strontium titanate-comprising
dielectric layer.
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