US 6,982,208 B2 | ||
Method for producing high throughput strained-Si channel MOSFETS | ||
Kuen-Chyr Lee, Tainan (Taiwan); Liang-Gi Yao, Hsin-Chu (Taiwan); Shih-Chang Chen, Hsin-Chu (Taiwan); and Mong-Song Liang, Hsin-Chu (Taiwan) | ||
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu (Taiwan) | ||
Filed on May 03, 2004, as Appl. No. 10/838,625. | ||
Prior Publication US 2005/0245058 A1, Nov. 03, 2005 | ||
Int. Cl. H01L 21/30 (2006.01) |
U.S. Cl. 438—455 | 27 Claims |
1. A method for forming a strained silicon layer device with improved wafer throughput and low defect density comprising the
steps of:
epitaxially growing a first silicon layer on a silicon substrate using at least one deposition precursor selected from the
group consisting of disilane and trisilane;
epitaxially growing a step-grade SiGe-containing buffer layer over and contacting the first silicon layer using at least one
deposition precursor selected from the group consisting of disilane and trisilane;
epitaxially growing a SiGe-containing capping layer over and contacting the step-grade SiGe-containing buffer layer using
at least one deposition precursor selected from the group consisting of disilane and trisilane; and,
epitaxially growing a second silicon layer using at least one deposition precursor selected from the group consisting of disilane
and silane.
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