US 6,982,883 B2 | ||
Radiation tolerant electrical component with non-radiation hardened FET | ||
Steven E. Summer, 1 Roned Rd., Shirley, N.Y. 11967 (US) | ||
Filed on Mar. 22, 2004, as Appl. No. 10/806,872. | ||
Prior Publication US 2005/0207186 A1, Sep. 22, 2005 | ||
Int. Cl. H02M 3/335 (2006.01) |
U.S. Cl. 363—21.12 | 21 Claims |
1. A radiation tolerant electrical component for providing controlled electrical response in radiation-intensive applications,
the component comprising:
an input line;
an output line;
a drive circuit, the drive circuit capable of transmitting a negative gate drive signal;
a non-hardened p-channel FET having a drain, a gate, and a source, the FET having a negative initial threshold voltage;
an isolation circuit; and
an output rectification circuit; wherein:
the input line is operably connected to the drive circuit;
the drive circuit is operably connected to the gate;
the source and gate are operably connected to the output rectification circuit;
the output rectification circuit is operably connected to the output line;
the isolation circuit is operably connected between the output line and the drive circuit to isolate the input line from the
output line; and
the drain is connected near ground,
whereby, when operating the electrical component in a radiation-intensive environment, the FET should operate at close to
its maximum gate voltage signal thereby allowing the FET to function across a high range of radiation exposure, and
whereby, when operating the electrical component in a radiation-intensive environment, the FET remains controllable even if
the FET operates below its maximum gate voltage.
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