US 6,982,461 B2
Lateral FET structure with improved blocking voltage and on resistance performance and method
Zia Hossain, Tempe, Ariz. (US); Shanghui Tu, Phoenix, Ariz. (US); Takeshi Ishiguro, Aizuwakamatsu (Japan); and Rajesh S. Nair, Chandler, Ariz. (US)
Assigned to Semiconductor Components Industries, L.L.C., Phoenix, Ariz. (US)
Filed on Dec. 08, 2003, as Appl. No. 10/729,292.
Prior Publication US 2005/0127438 A1, Jun. 16, 2005
Int. Cl. H01L 29/76 (2006.01); H01L 29/94 (2006.01)
U.S. Cl. 257—341 9 Claims
OG exemplary drawing
 
1. A lateral FET structure comprising:
a body of semiconductor material having a first conductivity type and a major surface;
first and second drift regions of a second conductivity type formed in the body of semiconductor material, wherein the first and second drift regions are spaced apart and comprise elongated stripe shapes;
a first drain contact region formed in the first drift region;
a second drain contact region formed in the second drift region, wherein the first and second drain contacts comprise elongated striped shapes;
a first pair of source regions formed in the body of semiconductor material and on opposing sides of the first drift region;
a second pair of source regions formed in the body of semiconductor material and on opposing sides of the second drift region, wherein the first and second pairs of source regions comprise elongated stripe shapes, and wherein the first and second pairs of source regions are substantially parallel to the first and second drain contacts;
a gate structure formed adjacent the first second pairs of source regions and the first and second drift regions;
a first conductivy layer formed overlying the body of semiconductor material and connecting the first and second pairs of source regions together;
a second conductive layer different than the first conductive layer formed overlying the body of semiconductor material and connecting the first and second drain contact regions together; and
an insulating layer vertically separating the first and second conductive layers.