US 6,982,438 B2 | ||
Light emitting device and method for fabricating the same | ||
Jun-ya Ishizaki, Annaka (Japan) | ||
Assigned to Shin-Etsu Handotai Co., Ltd., Tokyo (Japan) | ||
Appl. No. 10/484,408 PCT Filed Jul. 24, 2002, PCT No. PCT/JP02/07471 § 371(c)(1), (2), (4) Date Jan. 21, 2004, PCT Pub. No. WO03/030273, PCT Pub. Date Apr. 10, 2003. |
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Claims priority of application No. 2001-225139 (JP), filed on Jul. 25, 2001; and application No. 2001-307324 (JP), filed on Oct. 03, 2001. | ||
Prior Publication US 2004/0235212 A1, Nov. 25, 2004 | ||
Int. Cl. H01L 33/00 (2006.01) |
U.S. Cl. 257—103 | 23 Claims |
1. A light-emitting device comprising a light-emitting layer portion based on a double hetero-structure, and having at least
either of an active layer and a p-type cladding layer included in the double hetero-structure as being configured as an MgZnO
layer which is mainly composed of MgaZn1-aO-type oxide (where, 0≤a≤1), wherein the MgZnO layer has, interposed therein, a p-type oxide layer which is different from
the MgaZn1-aO-type oxide and has a p-type conductivity;
wherein the p-type oxide layer has any one of CuO, NiO and LiO as a major constituent.
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