US 6,982,854 B2
Magnetoresistance effect device and magnetoresistance effect head comprising the same, and magnetic recording/reproducing apparatus
Yasuhiro Kawawake, Kyoto (Japan); Yasunari Sugita, Osaka (Japan); and Hiroshi Sakakima, Kyoto (Japan)
Assigned to Matsushita Electric Industrial Co., Ltd., Osaka (Japan)
Appl. No. 10/312,006
PCT Filed Jun. 21, 2001, PCT No. PCT/JP01/05334
§ 371(c)(1), (2), (4) Date Apr. 04, 2003,
PCT Pub. No. WO01/99206, PCT Pub. Date Dec. 27, 2001.
Claims priority of application No. 2000-187973 (JP), filed on Jun. 22, 2000.
Prior Publication US 2003/0161077 A1, Aug. 28, 2003
Int. Cl. G11B 5/39 (2006.01)
U.S. Cl. 360—324.1 11 Claims
OG exemplary drawing
 
1. A magnetoresistive element comprising:
a first magnetic layer;
a nonmagnetic layer;
a second magnetic layer laminated to the first magnetic layer through the nonmagnetic layer; and
a magnetization rotation suppressing layer for suppressing magnetization rotation of the second magnetic layer,
wherein magnetization of the first magnetic layer is rotated more easily by an external magnetic field than magnetization of the second magnetic layer;
a current used for sensing is passes in a direction perpendicular to a film plane and parallel to a stacking direction of the first magnetic layer, the non-magnetic layer and the second magnetic layer;
the nonmagnetic layer is formed of a thin film whose main component is a metal having a specific resistance of 4 μΩ·cm to 200 μΩ·cm; and
a film thickness of the nonmagnetic layer is determined so that magnetic coupling force between the first magnetic layer and the second magnetic layer has an absolute value not more than 20% of that of the magnetic coupling force in the most antiferromagnetic state, the magnetic coupling force being attenuated while oscillating between ferromagnetic coupling and antiferromagnetic coupling as the film thickness is increased.