US 6,982,901 B1
Memory device and method of use
Darrel R. Bloomquist, deceased, late of Meridian, Id. (US), by Judy Bloomquist, legal representative,
Assigned to Hewlett-Packard Development Company, L.P., Houston, Tex. (US)
Filed on Jan. 31, 2003, as Appl. No. 10/355,788.
Int. Cl. G11C 11/00 (2006.01)
U.S. Cl. 365—158 12 Claims
OG exemplary drawing
 
1. A magnetic memory cell comprising:
a data storage layer;
a reference layer;
a tunnel barrier positioned between the data storage layer and the reference layer; and
an intermediate layer between the data storage layer and the reference layer, wherein the intermediate layer is alterable to permanently change the electrical resistance of the memory cell.