US 6,982,441 B2 | ||
Semiconductor device with a super lattice buffer | ||
Fumikazu Yamaki, Yamanashi (Japan); and Takeshi Igarashi, Yamanashi (Japan) | ||
Assigned to Fujitsu Quantum Devices Limited, Yamanashi (Japan) | ||
Filed on Jan. 04, 2002, as Appl. No. 10/35,444. | ||
Claims priority of application No. 2001-003069 (JP), filed on Jan. 10, 2001. | ||
Prior Publication US 2002/0088994 A1, Jul. 11, 2002 | ||
Int. Cl. H01L 31/0328 (2006.01) |
U.S. Cl. 257—192 | 26 Claims |
1. A high power semiconductor device for a radio communication system, comprising:
a compound semiconductor substrate having a resistivity less than 1.0×108 Ohm-cm at least at a surface thereof;
a buffer layer formed on the compound semiconductor substrate and having a super lattice structure; and
an active layer formed on the buffer layer and having a high power active element for radio communication formed therein,
wherein said substrate, buffer layer and active layer, together form said high power semiconductor device.
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