US 6,982,916 B2
Method and system for providing temperature dependent programming for magnetic memories
David Tsang, Cupertino, Calif. (US)
Assigned to Applied Spintronics Technology, Inc., Cupertino, Calif. (US)
Filed on Feb. 12, 2004, as Appl. No. 10/778,781.
Prior Publication US 2005/0180239 A1, Aug. 18, 2005
Int. Cl. G11C 7/04 (2006.01)
U.S. Cl. 365—213 22 Claims
OG exemplary drawing
 
1. A system for programming magnetic memory including a plurality of magnetic elements, the system comprising:
at least one temperature sensor for sensing a temperature of the magnetic memory and providing an indication of the temperature of the magnetic memory, the at least one temperature sensor including at least one diode-connected transistor having at least one emitter-base junction that is forward biased;
a current source coupled with the at least one temperature sensor, the current source for providing a current based on the indication of temperature of the magnetic memory, the current being temperature dependent and capable of being used in programming at least a portion of the plurality of magnetic elements without the addition of a separately generated current;
a plurality of conductive lines coupled with the current source for carrying the current for at least the portion of the plurality of magnetic elements.