US 6,982,450 B2 | ||
Magnetoresistive memory devices | ||
John Mattson, Waldorf, Md. (US) | ||
Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
Filed on Sep. 09, 2004, as Appl. No. 10/939,248. | ||
Application 10/939248 is a continuation of application No. 10/196484, filed on Jul. 15, 2002, granted, now 6,806,523. | ||
Prior Publication US 2005/0029565 A1, Feb. 10, 2005 | ||
Int. Cl. H01L 31/119 (2006.01) |
U.S. Cl. 257—295 | 21 Claims |
1. A magnetoresistive memory device, comprising:
a bitline conductive core extending in a first direction;
spaced bit regions associated with the bitline conductive core, the spaced bit regions being separated from one another by
gap regions along the bitline conductive core; and
the conductive core having a curvateous outer surface with a different curvature in the gap regions than in the bit regions.
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