US 6,982,457 B2
Semiconductor devices, and electronic systems comprising semiconductor devices
Arup Bhattacharyya, Essex Junction, Vt. (US)
Assigned to Micron Technology, Inc., Boise, Id. (US)
Filed on Feb. 17, 2004, as Appl. No. 10/781,588.
Application 10/781588 is a continuation of application No. 10/364710, filed on Feb. 10, 2003, granted, now 6,713,810.
Prior Publication US 2004/0159880 A1, Aug. 19, 2004
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/788 (2006.01)
U.S. Cl. 257—315 23 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a crystalline layer separated from a substrate by a first insulative material; the crystalline layer comprising silicon/germanium;
a floating charge trapping media over the crystalline layer;
a pair of source/drain regions proximate the charge trapping media and extending into the crystalline layer such that at least a portion of the source/drain regions are within the crystalline layer; the portion of the source/drain regions within the crystalline layer being contained within a single crystal of the silicon/germanium;
a second insulative material over the charge trapping media; and
a control gate over the second insulative material.