US 6,982,195 B2
Method of forming poly-silicon crystallization
Jia-Xing Lin, Pan Chiao (Taiwan); Chi-Lin Chen, Hsinchu (Taiwan); and Yu-Cheng Chen, Hsintien (Taiwan)
Assigned to Industrial Technology Research Institute, (Taiwan)
Filed on Feb. 19, 2004, as Appl. No. 10/780,589.
Claims priority of application No. 92136606 A (TW), filed on Dec. 23, 2003.
Prior Publication US 2005/0136612 A1, Jun. 23, 2005
Int. Cl. H01L 21/84 (2006.01)
U.S. Cl. 438—166 19 Claims
OG exemplary drawing
 
1. A method of forming poly-silicon crystallization, comprising the steps of:
forming an amorphous silicon layer on a substrate;
forming a protective layer on the amorphous silicon layer;
forming a reflective layer on the protective layer;
patterning the protective layer and the reflective layer simultaneously to form an opening exposing a portion of the amorphous silicon layer; and
laser annealing the amorphous silicon layer to form nucleation sites in the amorphous silicon layer under the protective layer and the reflective layer, wherein crystallization then grows towards the amorphous silicon layer in the opening to form a poly-silicon layer having a grain size of a micrometer with high grain order.