US 6,982,186 B2
CMOS image sensor and method for manufacturing the same
In Gyun Jeon, Icheon-Si (Korea, Republic of); Kwang Soo Kim, Icheon-Si (Korea, Republic of); and Jin Su Han, Icheon-Si (Korea, Republic of)
Assigned to DongbuAnam Semiconductor Inc., Seoul (Korea, Republic of)
Filed on Dec. 30, 2003, as Appl. No. 10/747,302.
Claims priority of application No. 10-2003-0066566 (KR), filed on Sep. 25, 2003.
Prior Publication US 2005/0067639 A1, Mar. 31, 2005
Int. Cl. H01L 21/00 (2006.01)
U.S. Cl. 438—73 14 Claims
OG exemplary drawing
 
1. A method for manufacturing a complementary metal oxide semiconductor (CMOS) image sensor, comprising steps of:
forming a field region defining an active region on a silicon substrate;
forming a gate electrode on the substrate;
forming a photodiode in a portion of the active region;
forming a masking layer so as to define a region for implanting dopant ions; and
performing an ion implantation of impurities into the region for implanting dopant ions for forming a lightly doped drain (LDD) structure, a source region, or a drain region, wherein, in the step of forming the masking layer, the masking layer is formed over the field region and a portion of the active region adjoining the field region between the gate electrode and the photodiode so as to define the region for implanting dopant ions.