US 6,982,467 B2 | ||
Semiconductor device and method of manufacturing the same | ||
Masato Koyama, Kanagawa-Ken (Japan); Akira Nishiyama, Kanagawa-Ken (Japan); Masamichi Suzuki, Kanagawa-Ken (Japan); Yuuichi Kamimuta, Kanagawa-Ken (Japan); and Tsunehiro Ino, Kanagawa-Ken (Japan) | ||
Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
Filed on Jun. 09, 2004, as Appl. No. 10/863,204. | ||
Claims priority of application No. 2003-169700 (JP), filed on Jun. 13, 2003. | ||
Prior Publication US 2005/0017305 A1, Jan. 27, 2005 | ||
Int. Cl. H01L 29/76 (2006.01) |
U.S. Cl. 257—388 | 16 Claims |
1. A semiconductor device comprising:
a silicon layer;
a gate dielectric film formed on the silicon layer;
a gate electrode formed on the gate dielectric film and including a nitrided metal silicide layer which is partially crystallized;
and
source and drain regions formed in a surface region of the silicon layer at both sides of the gate electrode.
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