US 6,981,465 B2 | ||
Chemical vapor deposition process and apparatus thereof | ||
Ki-Woong Chae, Chungcheongnam-do (Korea, Republic of) | ||
Assigned to Precision Diamond Technologies Co., Ltd., Chungcheongnam-do (Korea, Republic of) | ||
Appl. No. 10/469,016 PCT Filed Feb. 26, 2002, PCT No. PCT/KR02/00315 § 371(c)(1), (2), (4) Date Aug. 26, 2003, PCT Pub. No. WO02/068709, PCT Pub. Date Sep. 06, 2002. |
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Claims priority of application No. 2001-9598 (KR), filed on Feb. 26, 2001. | ||
Prior Publication US 2004/0069231 A1, Apr. 15, 2004 | ||
Int. Cl. C23C 16/27 (2006.01) |
U.S. Cl. 118—723HC | 5 Claims |
1. A chemical vapor deposition apparatus for depositing diamond at high temperatures, wherein the chemical vapor includes
hydrogen and methane gas, comprising:
a pair of electrodes having conductivity and being located symmetrically from each other at a predetermined interval on a
central base substrate wherein diamond is synthesized; and
a plurality of metal filaments placed over the pair of electrodes and fastened by metal weights hanged to the both ends of
each filament,
wherein the filaments placed over and between the electrodes are heated when a power supply is applied to the electrodes,
but portions of each filament contacting the electrodes are not heated.
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