US 6,982,042 B2 | ||
Ion bombardment of electrical lapping guides to decrease noise during lapping process | ||
Mark A. Church, Los Gatos, Calif. (US); Wipul Pemsiri Jayasekara, San Jose, Calif. (US); and Howard Gordon Zolla, San Jose, Calif. (US) | ||
Assigned to Hitachi Global Storage Technologies Netherlands, B.V., Amsterdam (Netherlands) | ||
Filed on Feb. 28, 2003, as Appl. No. 10/377,854. | ||
Prior Publication US 2004/0180608 A1, Sep. 16, 2004 | ||
Int. Cl. G11B 11/39 (2006.01) |
U.S. Cl. 216—22 | 25 Claims |
1. A method for lapping a magnetoresistive device, comprising:
masking selected portions of a magnetoresistive device wafer thereby defining masked and unmasked regions of the wafer, the
unmasked regions including lapping guides;
bombarding the wafer with ions such that a magnetoresistive effect of the unmasked regions is reduced;
lapping at least a section of the wafer; and
using the lapping guides to measure an extent of the lapping,
wherein the lapping guides have a defined track width prior to the bombardment.
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