US 6,982,891 B2
Re-configurable content addressable/dual port memory
Carl Anthony Monzel, III, Lakeville, Minn. (US)
Assigned to LSI Logic Corporation, Milpitas, Calif. (US)
Filed on Jun. 10, 2003, as Appl. No. 10/458,409.
Prior Publication US 2004/0252537 A1, Dec. 16, 2004
Int. Cl. G11C 15/00 (2006.01)
U.S. Cl. 365—49 18 Claims
OG exemplary drawing
 
1. A method for providing an application-specific device, comprising:
providing a gate array; and
providing a re-configurable memory core, wherein the re-configurable memory core includes re-configurable memory cells capable of being programmed as one of content addressable memory and dual-port static random access memory with a metal layer, wherein programming with the metal layer includes at least one of:
applying a first metal layer to program the re-configurable memory cells to be a content addressable memory; and
applying a second metal layer to program the re-configurable memory cells to be a dual-port static random access memory; and wherein the second metal layer is different from the first metal layer.