US 6,982,891 B2 | ||
Re-configurable content addressable/dual port memory | ||
Carl Anthony Monzel, III, Lakeville, Minn. (US) | ||
Assigned to LSI Logic Corporation, Milpitas, Calif. (US) | ||
Filed on Jun. 10, 2003, as Appl. No. 10/458,409. | ||
Prior Publication US 2004/0252537 A1, Dec. 16, 2004 | ||
Int. Cl. G11C 15/00 (2006.01) |
U.S. Cl. 365—49 | 18 Claims |
1. A method for providing an application-specific device, comprising:
providing a gate array; and
providing a re-configurable memory core, wherein the re-configurable memory core includes re-configurable memory cells capable
of being programmed as one of content addressable memory and dual-port static random access memory with a metal layer, wherein
programming with the metal layer includes at least one of:
applying a first metal layer to program the re-configurable memory cells to be a content addressable memory; and
applying a second metal layer to program the re-configurable memory cells to be a dual-port static random access memory; and
wherein the second metal layer is different from the first metal layer.
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