US 6,982,229 B2
Ion recoil implantation and enhanced carrier mobility in CMOS device
Agajan Suvkhanov, Portland, Oreg. (US); and Mohammad R. Mirabedini, Redwood City, Calif. (US)
Assigned to LSI Logic Corporation, Milpitas, Calif. (US)
Filed on Apr. 18, 2003, as Appl. No. 10/418,375.
Prior Publication US 2004/0206950 A1, Oct. 21, 2004
Int. Cl. H01L 23/48 (2006.01)
U.S. Cl. 438—752 5 Claims
OG exemplary drawing
 
1. A method of forming an integrated circuit comprising:
providing a semiconductor substrate;
forming a layer of germanium on the semiconductor substrate;
implanting ions into the layer of germanium;
forming a region of the semiconductor substrate having germanium therein by recoiling the germanium into the semiconductor substrate due to the implanting of the ions into the layer of germanium;
forming a strained silicon layer on the region of the semiconductor substrate having germanium therein by implanting the ions into the germanium layer with an energy level that causes the recoil of the germanium into the semiconductor substrate to advance into the semiconductor substrate to a depth that leaves a region near the surface of the semiconductor substrate substantially free of germanium; and
forming the CMOS device above the strained silicon layer.