US 6,982,916 B2 | ||
Method and system for providing temperature dependent programming for magnetic memories | ||
David Tsang, Cupertino, Calif. (US) | ||
Assigned to Applied Spintronics Technology, Inc., Cupertino, Calif. (US) | ||
Filed on Feb. 12, 2004, as Appl. No. 10/778,781. | ||
Prior Publication US 2005/0180239 A1, Aug. 18, 2005 | ||
Int. Cl. G11C 7/04 (2006.01) |
U.S. Cl. 365—213 | 22 Claims |
1. A system for programming magnetic memory including a plurality of magnetic elements, the system comprising:
at least one temperature sensor for sensing a temperature of the magnetic memory and providing an indication of the temperature
of the magnetic memory, the at least one temperature sensor including at least one diode-connected transistor having at least
one emitter-base junction that is forward biased;
a current source coupled with the at least one temperature sensor, the current source for providing a current based on the
indication of temperature of the magnetic memory, the current being temperature dependent and capable of being used in programming
at least a portion of the plurality of magnetic elements without the addition of a separately generated current;
a plurality of conductive lines coupled with the current source for carrying the current for at least the portion of the plurality
of magnetic elements.
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