US 6,982,208 B2
Method for producing high throughput strained-Si channel MOSFETS
Kuen-Chyr Lee, Tainan (Taiwan); Liang-Gi Yao, Hsin-Chu (Taiwan); Shih-Chang Chen, Hsin-Chu (Taiwan); and Mong-Song Liang, Hsin-Chu (Taiwan)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu (Taiwan)
Filed on May 03, 2004, as Appl. No. 10/838,625.
Prior Publication US 2005/0245058 A1, Nov. 03, 2005
Int. Cl. H01L 21/30 (2006.01)
U.S. Cl. 438—455 27 Claims
OG exemplary drawing
 
1. A method for forming a strained silicon layer device with improved wafer throughput and low defect density comprising the steps of:
epitaxially growing a first silicon layer on a silicon substrate using at least one deposition precursor selected from the group consisting of disilane and trisilane;
epitaxially growing a step-grade SiGe-containing buffer layer over and contacting the first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane;
epitaxially growing a SiGe-containing capping layer over and contacting the step-grade SiGe-containing buffer layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; and,
epitaxially growing a second silicon layer using at least one deposition precursor selected from the group consisting of disilane and silane.