US 6,982,225 B2
Interposer and method of making same
Mark T. Bohr, Aloha, Oreg. (US)
Assigned to Intel Corporation, Santa Clara, Calif. (US)
Filed on Sep. 10, 2003, as Appl. No. 10/660,421.
Application 10/660421 is a division of application No. 10/020316, filed on Oct. 29, 2001, granted, now 6,671,947.
Application 10/020316 is a division of application No. 09/340530, filed on Jun. 28, 1999, granted, now 6,617,681.
Prior Publication US 2005/0017333 A1, Jan. 27, 2005
Int. Cl. H01L 21/31 (2006.01)
U.S. Cl. 438—639 7 Claims
OG exemplary drawing
 
1. A method of making an interposer, comprising:
forming an oxide layer on each of a first surface and a second surface of a substrate;
patterning the oxide layer of the first surface to expose a first portion and a second portion of the substrate;
isotropically etching through the first portion of the exposed substrate to form a first portion of at least one deep-via opening;
anisotropically etching through the second portion of the exposed substrate to form a second portion of the at least one deep-via opening;
growing an oxide layer on inner surfaces of the at least one deep-via opening;
sputtering a copper barrier layer and a copper seed layer into the first and second portions of the at least one deep-via opening after growing the oxide layer;
electroplating a conductive material over the seed layer to form the at least one deep-via; and
forming vias and interconnect lines over the second surface of the substrate.