US 6,982,396 B2
Method for manufacturing a display device including irradiating overlapping regions
Shunpei Yamazaki, Tokyo (Japan); and Koichiro Tanaka, Kanagawa (Japan)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (Japan)
Filed on Jan. 13, 2003, as Appl. No. 10/341,661.
Application 10/341661 is a continuation of application No. 09/615261, filed on Jul. 13, 2000, granted, now 6,534,744.
Application 09/615261 is a continuation of application No. 09/211719, filed on Dec. 14, 1998, granted, now 6,156,997.
Application 09/211719 is a continuation of application No. 08/650285, filed on May 20, 1996, granted, now 5,893,990.
Claims priority of application No. 7-158645 (JP), filed on May 31, 1995.
Prior Publication US 2003/0132205 A1, Jul. 17, 2003
Int. Cl. B23K 26/00 (2006.01)
U.S. Cl. 219—121.8 26 Claims
OG exemplary drawing
 
1. A method of manufacturing a display device comprising:
forming a semiconductor film over a substrate;
generating a laser light from an oscillator, wherein the laser light passes through an attenuation means comprising a filter, and passes through an optical system after passing through the attenuation means;
irradiating a first region of the semiconductor film with the laser light passed through the optical system, wherein one point of the first region of the semiconductor film is irradiated with at least two shots;
irradiating a second region of the semiconductor film with the laser light passed through the optical system, wherein one point of the second region of the semiconductor film is irradiated with at least two shots, and wherein the first region and the second region have a portion overlapping with each other; and
etching the semiconductor film into a plurality of semiconductor layers for transistors in areas outside the portion.