US 6,982,136 B1
Method and system for determining optimum optical proximity corrections within a photolithography system
Chris Haidinyak, Santa Cruz, Calif. (US)
Assigned to Advanced Micro Devices, Inc., Sunnyvale, Calif. (US)
Filed on Oct. 15, 2004, as Appl. No. 10/966,854.
Application 10/966854 is a division of application No. 10/161450, filed on May 31, 2002, granted, now 6,824,937.
Int. Cl. G03F 9/00 (2006.01); G06F 17/50 (2006.01)
U.S. Cl. 430—5 12 Claims
 
1. A system for determining optimum optical proximity corrections (OPCs) for a mask pattern, comprising:
a reticle having a plurality of mask areas formed thereon with each mask area having the same mask pattern of polygons that are modified with different respective OPCs perturbations;
a photolithography system for fabricating a respective patterned area on a semiconductor wafer from each mask area of the reticle; and
a microscopy system for generating a respective microscopy image of each respective patterned area to determine a respective error function for each mask area.