US 6,982,229 B2 | ||
Ion recoil implantation and enhanced carrier mobility in CMOS device | ||
Agajan Suvkhanov, Portland, Oreg. (US); and Mohammad R. Mirabedini, Redwood City, Calif. (US) | ||
Assigned to LSI Logic Corporation, Milpitas, Calif. (US) | ||
Filed on Apr. 18, 2003, as Appl. No. 10/418,375. | ||
Prior Publication US 2004/0206950 A1, Oct. 21, 2004 | ||
Int. Cl. H01L 23/48 (2006.01) |
U.S. Cl. 438—752 | 5 Claims |
1. A method of forming an integrated circuit comprising:
providing a semiconductor substrate;
forming a layer of germanium on the semiconductor substrate;
implanting ions into the layer of germanium;
forming a region of the semiconductor substrate having germanium therein by recoiling the germanium into the semiconductor
substrate due to the implanting of the ions into the layer of germanium;
forming a strained silicon layer on the region of the semiconductor substrate having germanium therein by implanting the ions
into the germanium layer with an energy level that causes the recoil of the germanium into the semiconductor substrate to
advance into the semiconductor substrate to a depth that leaves a region near the surface of the semiconductor substrate substantially
free of germanium; and
forming the CMOS device above the strained silicon layer.
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