US 6,983,004 B2 | ||
Laser diode and semiconductor light-emitting device producing visible-wavelength radiation | ||
Naoto Jikutani, Miyagi (Japan); Takashi Takahashi, Miyagi (Japan); and Shunichi Sato, Miyagi (Japan) | ||
Assigned to Ricoh Company, Ltd., Tokyo (Japan) | ||
Filed on May 02, 2003, as Appl. No. 10/427,909. | ||
Application 10/427909 is a division of application No. 09/633230, filed on Aug. 04, 2000, granted, now 6,614,821. | ||
Claims priority of application No. 11-220649 (JP), filed on Aug. 04, 1999; application No. 11-229794 (JP), filed on Aug. 16, 1999; application No. 11-243745 (JP), filed on Aug. 30, 1999; application No. 11-339267 (JP), filed on Nov. 30, 1999; application No. 2000-057254 (JP), filed on Mar. 02, 2000; and application No. 2000-144604 (JP), filed on May 12, 2000. | ||
Prior Publication US 2003/0198268 A1, Oct. 23, 2003 | ||
Int. Cl. H01S 5/00 (2006.01) |
U.S. Cl. 372—46 | 6 Claims |
1. A laser diode, comprising:
a substrate having a first conductivity type;
a first cladding layer of said first conductivity type provided over said substrate, said first cladding layer having a lattice
constant between GaAs and GaP;
an active layer formed over said first cladding layer;
a second cladding layer of a second conductivity type provided over said active layer, said second cladding layer having said
lattice constant;
a current-blocking layer of said first conductivity type respectively provided over said second cladding layer;
a stripe depression formed in said current-blocking layer; and
a third cladding layer of said second conductivity type formed over said current-blocking layer so as to include said stripe
depression,
said current-blocking layer having a composition represented as (Alx2Ga1−x2)y2In1−y2Asz2P1−z2(0≤x2≤, 1, 0≤y2≤1, 0<z2≤1).
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