US 6,982,185 B2
Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same
Randall L. Kubena, Oak Park, Calif. (US); and David T. Chang, Covina, Calif. (US)
Assigned to HRL Laboratories, LLC, Malibu, Calif. (US)
Filed on Feb. 04, 2003, as Appl. No. 10/358,471.
Application 10/358471 is a division of application No. 09/629682, filed on Aug. 01, 2000, granted, now 6,580,138, filed on Jun. 17, 2003.
Prior Publication US 2003/0141562 A1, Jul. 31, 2003
Int. Cl. H01L 21/00 (2006.01)
U.S. Cl. 438—52 32 Claims
OG exemplary drawing
 
1. A method of making a MEM switch or tunneling sensor comprising the steps of:
(a) defining a cantilevered beam structure and a mating structure on an etch stop formed on first substrate or wafer;
(b) forming at least one contact structure and a mating structure on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer;
(c) positioning the mating structure of the first substrate into a confronting relationship with the mating structure of the second substrate or wafer;
(d) bonding a layer associated with said mating structure on the first substrate or wafer with a layer associated with the mating structure on the second substrate or wafer;
(e) removing at least a portion of the first substrate or wafer and the etch stop to release the cantilevered beam structure.