US 6,982,196 B2 | ||
Oxidation method for altering a film structure and CMOS transistor structure formed therewith | ||
Michael P. Belyansky, Bethel, Conn. (US); Diane C. Boyd, LaGrangeville, N.Y. (US); Bruce B. Doris, Brewster, N.Y. (US); and Oleg Gluschenkov, Poughkeepsie, N.Y. (US) | ||
Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
Filed on Nov. 04, 2003, as Appl. No. 10/605,889. | ||
Prior Publication US 2005/0093081 A1, May 05, 2005 | ||
Int. Cl. H01L 21/8238 (2006.01) |
U.S. Cl. 438—199 | 13 Claims |
1. A method of fabricating an integrated circuit including a p-type field effect transistor (PFET) and an n-type field effect
transistor (NFET), said NFET and said PFET each having a channel region and a source and drain region, said method comprising:
forming a PFET gate stack and an NFET gate stack over a single-crystal region of a semiconductor, said PFET gate stack and
said NFET gate stack each having a gate conductor overlying a gate dielectric formed on a main surface of said single-crystal
region and spacers including a first material formed on sidewalls of said gate conductor;
forming a film having a stress over said source and drain regions of said NFET and said PFET;
blocking said source and drain regions of either said NFET or said PFET with a mask; and
oxidizing portions of said film by supplying atomic oxygen to a surface of said film in areas not blocked by said mask to
reduce a magnitude of said stress in said film over said source and drain regions of said PFET or said NFET, respectively.
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