US 6,982,469 B2 | ||
Semiconductor optical device and the fabrication method | ||
Susumu Kondo, Tama (Japan); Matsuyuki Ogasawara, Isehara (Japan); Ryuzo Iga, Atsugi (Japan); Yasuhiro Kondo, Atsugi (Japan); Yoshio Noguchi, Isehara (Japan); Masahiro Yuda, Ebina (Japan); Ken Tsuzuki, Zama (Japan); and Satoshi Oku, Atsugi (Japan) | ||
Assigned to Nippon Telegraph and Telephone Corporation, Tokyo (Japan) | ||
Filed on Feb. 09, 2004, as Appl. No. 10/775,806. | ||
Application 10/775806 is a division of application No. 10/124835, filed on Apr. 18, 2002, granted, now 6,717,187. | ||
Claims priority of application No. 2001-119443 (JP), filed on Apr. 18, 2001; application No. 2001-141184 (JP), filed on May 11, 2001; and application No. 2001-269934 (JP), filed on Sep. 06, 2001. | ||
Prior Publication US 2004/0159847 A1, Aug. 19, 2004 | ||
Int. Cl. H01L 31/0232 (2006.01); H01L 31/06 (2006.01) |
U.S. Cl. 257—432 | 4 Claims |
1. A semiconductor optical device comprising:
a semiconductor substrate;
a stacked body formed at least by a cladding layer having a first conductivity, an active region formed by an active layer
or a photoabsorption layer and a cladding layer having a second conductivity, said stacked body being provided on said semiconductor
substrate and formed like a mesa stripe;
wherein both sides of said stacked body are buried by a burying layer formed at least by a semi-insulating semiconductor crystal;
the width of said active region is smaller than each of the width of said cladding layer having first conductivity and the
width of said cladding layer having said second conductivity; and
a Ru-doped semi-insulating layer is provided in a space between said burying layer and said active region in both sides of
said active region.
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