US 6,982,230 B2
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
Cyril Cabral, Jr., Ossining, N.Y. (US); Alessandro C. Callegari, Yorktown Heights, N.Y. (US); Michael A. Gribelyuk, Poughquag, N.Y. (US); Paul C. Jamison, Hopewell Junction, N.Y. (US); Dianne L. Lacey, Mahopac, N.Y. (US); Fenton R. McFeely, Ossining, N.Y. (US); Vijay Narayanan, New York, N.Y. (US); Deborah A. Neumayer, Danbury, Conn. (US); Pushkar Ranade, Hillsboro, Oreg. (US); and Sufi Zafar, Briarcliff Manor, N.Y. (US)
Assigned to International Business Machines Corporation, Armonk, N.Y. (US)
Filed on Nov. 08, 2002, as Appl. No. 10/291,334.
Prior Publication US 2004/0092073 A1, May 13, 2004
Int. Cl. H01L 21/31 (2006.01)
U.S. Cl. 438—778 14 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor structure comprising:
providing a precursor mixture comprising hafnium and/or zirconium alkoxide precursor and a liquid, said liquid is inert such that the liquid does not react substantially with said alkoxide precursor;
vaporizing at least said hafnium and/or zirconium alkoxide precursor into a vaporized precursor;
depositing a constituent of the vaporized precursor onto a surface of a substrate to form a hafnium and/or zirconium oxide film at a deposition temperature of greater than 400° C., wherein said hafnium and/or zirconium oxide film comprises little or no FTIR detectable C or OH;
forming a conductive metal atop said hafnium and/or zirconium oxide film; and
passivating the hafnium and/or zirconium oxide film by hydrogen plasma treatment or forming gas anneal under conditions wherein the conductive metal reacts with trapped water at an interface between the conductive metal and the hafnium and/or zirconium oxide film interface to form a thin conductive metal oxide interlayer that releases hydrogen.