US 6,982,448 B2
Ferroelectric capacitor hydrogen barriers and methods for fabricating the same
K. R. Udayakumar, Dallas, Tex. (US); Theodore S. Moise, Dallas, Tex. (US); and Scott R. Summerfelt, Garland, Tex. (US)
Assigned to Texas Instruments Incorporated, Dallas, Tex. (US)
Filed on Mar. 18, 2004, as Appl. No. 10/803,445.
Prior Publication US 2005/0205906 A1, Sep. 22, 2005
Int. Cl. H01L 29/76 (2006.01); H01L 29/94 (2006.01)
U.S. Cl. 257—295 8 Claims
OG exemplary drawing
 
4. A semiconductor device, comprising:
a ferroelectric capacitor formed above a semiconductor body;
an aluminum oxide material formed along at least a portion of a side of the ferroelectric capacitor;
a first silicon nitride layer formed over at least a portion of the aluminum oxide material; and
a second silicon nitride formed layer over at least a portion of the first silicon nitride layer, the second silicon nitride layer comprising a low silicon-hydrogen SiN material having an FTIR figure of merit value of about 0.05 or less, wherein the FTIR figure of merit is calculated as (Si—H absorbance)/(N—H absorbance×1.4).