US 6,982,215 B1
N type impurity doping using implantation of P2+ ions or As2+ Ions
Buan Heng Lee, Singapore (Singapore); Teck Hong Low, Singapore (Singapore); Hai Rong Wang, Singapore (Singapore); Tang Ying, Singapore (Singapore); and Zadig Cherng-Ching Lam, Arcadia, Calif. (US)
Assigned to Chartered Semiconductor Manufacturing Ltd., Singapore (Singapore)
Filed on Nov. 05, 1998, as Appl. No. 9/186,388.
Int. Cl. H01L 21/425 (2006.01)
U.S. Cl. 438—514 28 Claims
OG exemplary drawing
 
1. A method of forming source/drain regions, comprising the steps of:
providing a semiconductor integrated circuit wafer having source/drain regions;
providing an ion implant apparatus;
placing a phosphorous ion source in said ion implant apparatus;
adjusting said ion implant apparatus so that said ion implant apparatus produces an ion beam comprising P2+ ions, wherein said ion beam has a beam density and a beam energy;
implanting impurities into said source/drain regions of said integrated circuit wafer, wherein said impurities consist of P2+ ions implanted using a single ion implantation step and said ion beam; and
annealing said integrated circuit wafer having P2+ ions implanted at an anneal temperature for an anneal time.