US 6,982,443 B2
Hollow dielectric for image sensor
Tzu-Hsuan Hsu, Kaohsiung (Taiwan); Shou-Gwo Wuu, Hsin-Chu (Taiwan); Ho-Ching Chien, Jhudong (Taiwan); and Dun-Nian Yaung, Taipei (Taiwan)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (Taiwan)
Filed on Mar. 12, 2004, as Appl. No. 10/799,986.
Prior Publication US 2005/0199921 A1, Sep. 15, 2005
Int. Cl. H01L 27/148 (2006.01); H01L 29/768 (2006.01)
U.S. Cl. 257—226 23 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a workpiece including a first region and a second region;
a sensor formed in the first region;
at least one first insulating layer disposed over the sensor in the first region and disposed over the second region;
a plurality of apertures formed in each at least one first insulating layer over the sensor, and
a second insulating layer disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer, wherein each aperture forms a hollow region beneath the second insulating layer within the at least one first insulating layer.