US 6,982,174 B2 | ||
Directed assembly of nanometer-scale molecular devices | ||
Dawn A. Bonnell, West Chester, Pa. (US); Rodolfo Antonio Alvarez, Philadelphia, Pa. (US); and Sergei V. Kalinin, Knoxville, Tenn. (US) | ||
Assigned to The Trustees of the University of Pennsylvania, Philadelphia, Pa. (US) | ||
Appl. No. 10/344,810 PCT Filed Aug. 15, 2001, PCT No. PCT/US01/41726 § 371(c)(1), (2), (4) Date Sep. 03, 2003, PCT Pub. No. WO02/15240, PCT Pub. Date Feb. 21, 2002. |
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Claims priority of provisional application 60/225261, filed on Aug. 15, 2000. | ||
Prior Publication US 2004/0029297 A1, Feb. 12, 2004 | ||
Int. Cl. H01L 21/00 (2006.01); H05K 3/00 (2006.01) |
U.S. Cl. 438—3 | 57 Claims |
1. A method of processing a substrate for use in a nanoscale molecular device, comprising the steps of:
a. providing a substrate of ferroelectric material having a first polarization distribution;
b. establishing on said substrate at least one localized region having a second polarization distribution oriented differently
from said first polarization distribution by the influence of an energy field applied to said at least one localized region;
c. exposing said substrate to ions of an electrically conductive metal, said metal ions being deposited selectively at said
at least one localized region due to interaction between said metal ions and said at least one localized region; and
d. converting said deposited metal ions to elemental metal at said at least one localized region.
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