US 6,982,903 B2
Field effect devices having a source controlled via a nanotube switching element
Claude L. Bertin, South Burlington, Vt. (US); Thomas Rueckes, Boston, Mass. (US); Brent M. Segal, Woburn, Mass. (US); and Frank Guo, Danville, Calif. (US)
Assigned to Nantero, Inc., Woburn, Mass. (US)
Filed on Jun. 09, 2004, as Appl. No. 10/864,045.
Claims priority of provisional application 60/476976, filed on Jun. 09, 2003.
Prior Publication US 2005/0062070 A1, Mar. 24, 2005
Int. Cl. G11C 11/00 (2006.01)
U.S. Cl. 365—163 13 Claims
OG exemplary drawing
 
1. A field effect device, comprising:
a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type, the drain region being connected to a corresponding terminal;
a gate structure disposed over the channel region and connected to a corresponding terminal;
a nanotube switching element, responsive to a first control terminal and a second control terminal, electrically positioned in series between the source region and a terminal corresponding to the source region, the nanotube switching element being electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the source region and its corresponding terminal;
wherein, when the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.