US 6,982,474 B2 | ||
Reacted conductive gate electrodes | ||
Matthew T. Currie, Boston, Mass. (US); and Richard Hammond, Cambridge, Mass. (US) | ||
Assigned to AmberWave Systems Corporation, Salem, N.H. (US) | ||
Filed on Jun. 25, 2002, as Appl. No. 10/179,079. | ||
Prior Publication US 2003/0234439 A1, Dec. 25, 2003 | ||
Int. Cl. H01L 31/117 (2006.01) |
U.S. Cl. 257—616 | 15 Claims |
1. A semiconductor device, comprising:
a substrate comprising a relaxed layer, a strained semiconductor layer between the relaxed layer and a dielectric layer, and
a reacted conductive silicide layer in contact with the relaxed layer, wherein the reacted conductive silicide layer comprises
silicon, germanium and a metallic material; and
a gate contact comprising a reacted conductive silicide portion comprising silicon, germanium and the metallic material.
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