US 6,982,214 B2 | ||
Method of forming a controlled and uniform lightly phosphorous doped silicon film | ||
Li Fu, Santa Clara, Calif. (US); Sheeba J. Panayil, Santa Clara, Calif. (US); Shulin Wang, Campbell, Calif. (US); Christopher G. Quentin, Fremont, Calif. (US); Lee Luo, Fremont, Calif. (US); Aihua Chen, San Jose, Calif. (US); and Xianzhi Tao, San Jose, Calif. (US) | ||
Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
Filed on Oct. 01, 2002, as Appl. No. 10/263,105. | ||
Prior Publication US 2004/0063301 A1, Apr. 01, 2004 | ||
Int. Cl. H01L 21/20 (2006.01) |
U.S. Cl. 438—508 | 15 Claims |
1. A method of forming a lightly phosphorus doped silicon film comprising:
placing a substrate in a single-wafer deposition chamber;
introducing a phosphorus source gas and a disilane gas into said single-wafer deposition chamber, wherein said phosphorus
source gas and said disilane gas have a first flow ratio less than 1:100; and
thermally decomposing said disilane gas and said phosphorus source gas at a pressure ranging from about 30 Torr to 350 Torr
to form said lightly phosphorus doped silicon film which has a phosphorus doping concentration less than 1×1020 atoms/cm3.
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