US 6,982,188 B1 | ||
Post CMP precursor treatment | ||
James J. Xie, Fremont, Calif. (US); Minh V. Ngo, Fremont, Calif. (US); and Sergey D. Lopatin, Santa Clara, Calif. (US) | ||
Assigned to Advanced Micro Devices, Inc, Sunnyvale, Calif. (US) | ||
Filed on Dec. 03, 2003, as Appl. No. 10/726,829. | ||
Int. Cl. H01L 51/40 (2006.01) |
U.S. Cl. 438—99 | 20 Claims |
1. A method for fabricating an organic memory cell comprising:
forming a substrate layer having a surface that acts as a base for an organic memory cell to be created thereupon;
performing a chemical mechanical planarization (CMP) process on the surface;
exposing the surface that has undergone chemical mechanical planarization to an inorganic acid for shaping a surface depression
thereupon;
growing a passive layer within the surface depression; and
applying an organic acid to a surface of the grown passive layer, such that a substantially smooth surface texture is obtained.
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