US 6,982,226 B1
Method of fabricating a contact with a post contact plug anneal
Sailesh M. Merchant, Orlando, Fla. (US); Binh Nguyenphu, Orlando, Fla. (US); and Minseok Oh, Orlando, Fla. (US)
Assigned to Agere Systems Inc., Allentown, Pa. (US)
Filed on Jun. 05, 1998, as Appl. No. 9/92,158.
Int. Cl. H01L 21/4763 (2006.01)
U.S. Cl. 438—648 20 Claims
OG exemplary drawing
 
1. A process for fabricating a contact in a semiconductor substrate having a contact opening formed therein, comprising:
depositing by physical vapor deposition a barrier layer in said contact opening and on at least a portion of said semiconductor substrate, wherein said depositing said barrier layer includes depositing a titanium layer and depositing a titanium nitride layer on said titanium layer;
depositing a contact metal on said barrier layer within said contact opening;
removing a substantial portion of said contact metal and said barrier layer from said semiconductor substrate to form a contact plug within said contact opening, said plug extending to an uppermost surface of said substrate; and
subjecting said contact plug to a temperature from about 600° C. to about 750° C. to anneal said barrier layer.