US 6,982,455 B2
Semiconductor device and method of manufacturing the same
Takahisa Hayashi, Tokyo (Japan)
Assigned to Oki Electric Industry Co., Ltd., Tokyo (Japan)
Filed on Nov. 04, 2003, as Appl. No. 10/699,734.
Claims priority of application No. 2003-153693 (JP), filed on May 30, 2003.
Prior Publication US 2004/0238865 A1, Dec. 02, 2004
Int. Cl. H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/119 (2006.01)
U.S. Cl. 257—310 7 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate including an integrated circuit;
an interlayer insulating layer formed on said substrate, said interlayer insulating layer having a contact hole;
a ferroelectric capacitor formed by a first electrode layer, a ferroelectric layer and a second electrode layer deposited on said interlayer insulating layer in this order;
a wiring layer electrically connecting said second electrode layer of said ferroelectric capacitor to said integrated circuit through said contact hole in said interlayer insulating layer; and
an insulating side wall film covering a peripheral section of said ferroelectric capacitor and electrically insulating said peripheral section of said ferroelectric capacitor from said wiring layer, and being spaced from a peripheral edge section of said contact hole.