US 6,982,447 B2 | ||
Ferroelectric memory devices | ||
Hyun-ho Kim, Gyeonggi-do (Korea, Republic of) | ||
Assigned to Samsung Electronics Co., Ltd., (Korea, Republic of) | ||
Filed on Feb. 26, 2004, as Appl. No. 10/788,105. | ||
Claims priority of application No. 10-2003-0013748 (KR), filed on Mar. 05, 2003. | ||
Prior Publication US 2004/0173829 A1, Sep. 09, 2004 | ||
Int. Cl. H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/119 (2006.01) |
U.S. Cl. 257—295 | 23 Claims |
1. A ferroelectric memory device comprising:
a semiconductor substrate;
a plurality of ferroelectric capacitors, each comprising a bottom electrode, a ferroelectric layer, and an upper electrode
layer, wherein the ferroelectric capacitors are arranged in rows and columns on the semiconductor substrate; and
a plurality of columns of plate lines, wherein each of the plate lines is electrically connected to a plurality of the ferroelectric
capacitors in a row, wherein
at least two adjacent rows of four adjacent ferroelectric capacitors have a common upper electrode, and at least two of the
plate lines are on the common upper electrode.
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