US 6,982,434 B2 | ||
Quantum-well memory device and method for making the same | ||
Yen-Hao Smith, Hsinchu (Taiwan) | ||
Assigned to Macronix International Co., Ltd., (Taiwan) | ||
Filed on Apr. 23, 2004, as Appl. No. 10/831,431. | ||
Prior Publication US 2005/0236613 A1, Oct. 27, 2005 | ||
Int. Cl. H01L 29/06 (2006.01) |
U.S. Cl. 257—24 | 9 Claims |
1. A quantum well memory device, comprising:
a substrate;
a bottom oxide layer having a first oxide property and extending a length between a first junction and a second junction;
a middle insulator layer having a second property that is more soluble to an acid etch that the first property, the middle
oxide layer extending less than the length between the first junction and second junction;
a top oxide layer having the first oxide property and extending the length between the first junction and the second junction;
and
first and second polysilicon inserts defined in undercuts between the bottom oxide layer and the top oxide layer in a level
of the middle insulator layer, the polysilicon inserts positioned beside the middle insulator layer and extending respectively
to the first junction and the second junction.
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