US 6,982,483 B2 | ||
High impedance radio frequency power plastic package | ||
Robert J. McLaughlin, Phoenix, Ariz. (US); Alexander J. Elliott, Tempe, Ariz. (US); Mall Mahalingam, Scottsdale, Ariz. (US); Scott D. Marshall, Chandler, Ariz. (US); and Pierre-Marie J. Piel, Tempe, Ariz. (US) | ||
Assigned to Freescale Semiconductor, Inc., Austin, Tex. (US) | ||
Filed on May 30, 2003, as Appl. No. 10/448,548. | ||
Prior Publication US 2004/0241913 A1, Dec. 02, 2004 | ||
Int. Cl. H01L 23/34 (2006.01) |
U.S. Cl. 257—728 | 23 Claims |
1. A semiconductor device, comprising:
a Radio Frequency (RF) device;
a Low Temperature Co-Fired Ceramic (LTCC) impedance matching structure electrically connected to the RF device; and
a plastic package body formed over the RF device and the impedance matching structure.
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