US 6,982,462 B2 | ||
Light emitting display device using multi-gate thin film transistor | ||
Jun Koyama, Kanagawa (Japan) | ||
Assigned to Semiconductor Energy Laboratory Co., Ltd., (Japan) | ||
Filed on Apr. 29, 2004, as Appl. No. 10/835,026. | ||
Application 10/835026 is a continuation of application No. 09/725798, filed on Nov. 29, 2000, granted, now 6,730,966. | ||
Claims priority of application No. 11-341272 (JP), filed on Nov. 30, 1999; and application No. 2000-260061 (JP), filed on Aug. 30, 2000. | ||
Prior Publication US 2005/0001215 A1, Jan. 06, 2005 | ||
Int. Cl. H01L 27/15 (2006.01); H01L 27/01 (2006.01); H01L 27/12 (2006.01); H01L 31/0392 (2006.01) |
U.S. Cl. 257—350 | 48 Claims |
1. An electric device having a light emitting display device, said light emitting display device comprising:
a plurality of source signal lines;
a plurality of gate signal lines;
a plurality of power source supply lines;
a plurality of power source control lines; and
a plurality of pixels,
each of the plurality of pixels including:
a switching thin film transistor having a multi-gate structure,
an EL driving thin film transistor,
a power source controlling thin film transistor, and
an EL element, and
wherein the power source controlling thin film transistor controls a potential difference between a cathode and an anode of
the EL element.
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