US 6,982,224 B2
Method for forming metal wires in semiconductor device
Ihl Hyun Cho, Daejeon (Korea, Republic of)
Assigned to Hynix Semiconductor Inc., Ichon-Shi (Korea, Republic of)
Filed on Jun. 29, 2004, as Appl. No. 10/878,360.
Claims priority of application No. 10-2004-0027106 (KR), filed on Apr. 20, 2004.
Prior Publication US 2005/0233579 A1, Oct. 20, 2005
Int. Cl. H01L 21/4763 (2006.01)
U.S. Cl. 438—637 12 Claims
OG exemplary drawing
 
1. A method for forming metal wires in a semiconductor device, comprising the steps of:
forming a porous dielectric film on a semiconductor substrate as an insulating film between metal wires;
selectively etching the porous dielectric film to form an aperture defining a metal wire region;
infiltrating sealing particles into pores of the porous dielectric film exposed on the sidewall of the aperture;
implementing an annealing process for agglomerating the sealing particles to seal the entrances of the pores of the porous dielectric film exposed on the sidewall of the aperture;
forming an anti-diffusion film at the bottom and on the sidewall of the aperture;
forming a metal film on the anti-diffusion film; and
polishing the metal film and the anti-diffusion film until the top of the porous dielectric film is formed to metal wires within the aperture.