US 6,982,225 B2 | ||
Interposer and method of making same | ||
Mark T. Bohr, Aloha, Oreg. (US) | ||
Assigned to Intel Corporation, Santa Clara, Calif. (US) | ||
Filed on Sep. 10, 2003, as Appl. No. 10/660,421. | ||
Application 10/660421 is a division of application No. 10/020316, filed on Oct. 29, 2001, granted, now 6,671,947. | ||
Application 10/020316 is a division of application No. 09/340530, filed on Jun. 28, 1999, granted, now 6,617,681. | ||
Prior Publication US 2005/0017333 A1, Jan. 27, 2005 | ||
Int. Cl. H01L 21/31 (2006.01) |
U.S. Cl. 438—639 | 7 Claims |
1. A method of making an interposer, comprising:
forming an oxide layer on each of a first surface and a second surface of a substrate;
patterning the oxide layer of the first surface to expose a first portion and a second portion of the substrate;
isotropically etching through the first portion of the exposed substrate to form a first portion of at least one deep-via
opening;
anisotropically etching through the second portion of the exposed substrate to form a second portion of the at least one deep-via
opening;
growing an oxide layer on inner surfaces of the at least one deep-via opening;
sputtering a copper barrier layer and a copper seed layer into the first and second portions of the at least one deep-via
opening after growing the oxide layer;
electroplating a conductive material over the seed layer to form the at least one deep-via; and
forming vias and interconnect lines over the second surface of the substrate.
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