US 6,982,204 B2 | ||
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses | ||
Adam William Saxler, Durham, N.C. (US); Richard Peter Smith, Carrboro, N.C. (US); and Scott T. Sheppard, Chapel Hill, N.C. (US) | ||
Assigned to Cree, Inc., Durham, N.C. (US) | ||
Filed on Jul. 11, 2003, as Appl. No. 10/617,843. | ||
Claims priority of provisional application 60/396236, filed on Jul. 16, 2002. | ||
Prior Publication US 2004/0061129 A1, Apr. 01, 2004 | ||
Int. Cl. H01L 21/336 (2006.01) |
U.S. Cl. 438—285 | 46 Claims |
1. A method of fabricating a transistor, the method comprising:
forming a nitride-based channel layer on a substrate;
forming a nitride-based semiconductor first cap layer on the nitride-based channel layer;
forming a mask that covers a first portion of the first cap layer and exposes an adjacent second portion of the first cap
layer;
forming a nitride-based semiconductor second cap layer on the exposed second portion of the first cap layer using the mask;
removing at least a portion of the mask to form a recess on the first portion of the first cap layer adjacent the second cap
layer;
forming one of an ohmic contact or a gate contact in the recess; and
forming a corresponding gate contact or ohmic contact on the substrate.
|