US 6,982,475 B1 | ||
Hermetic wafer scale integrated circuit structure | ||
Donald M. MacIntyre, San Jose, Calif. (US) | ||
Assigned to MCSP, LLC, San Jose, Calif. (US) | ||
Filed on Jul. 03, 2002, as Appl. No. 10/190,055. | ||
Application 10/190055 is a continuation in part of application No. 09/686016, filed on Oct. 10, 2000, granted, now 6,555,469. | ||
Application 09/686016 is a continuation in part of application No. 09/045507, filed on Mar. 20, 1998. | ||
Int. Cl. H01L 23/12 (2006.01) |
U.S. Cl. 257—620 | 23 Claims |
1. A wafer scale semiconductor integrated circuit structure comprising:
a semiconductor wafer having a plurality of individual integrated circuit die formed on an upper surface thereof;
for each individual integrated circuit die, a plurality of spaced-apart conductive bond pads formed on an upper surface of
said integrated circuit die;
a unitary, substantially planar solid glass sheet having prefabricated holes formed therein, wherein the size of the glass
sheet matches the size of the semiconductor wafer;
a layer of adhesive material disposed on the surface of the semiconductor wafer such that the layer of adhesive material affixes
the glass sheet to the semiconductor wafer such that the holes in the glass sheet are aligned with the location of the bond
pads on the individual integrated circuit die formed on the semiconductor wafer;
a first layer of conductive material formed on an upper surface of the glass sheet, wherein the conductive material is formed
to create metallized pads adjacent to the holes in the glass sheet and conductive traces that are electrically connected to
the metallized pads and extend from the metallized pads to the holes in the glass sheet;
a trench matrix cut through the glass sheet, the adhesive material and into the semiconductor wafer to extend around the perimeter
of each integrated circuit die;
an hermetic material deposited in the trench matrix such that the trench matrix and the hermetic material deposited in the
trench matrix form a hermetic seal between the glass sheet and each integrated circuit die;
a second layer of conductive material formed on the surface of the glass sheet, wherein the second layer of conductive material
extends through the holes in the glass sheet to electrically connect the conductive traces to the bond pads; and
a plurality of solder balls disposed on the surface of the glass sheet, wherein the solder balls are disposed on the conductive
material such that an electrical connection is made between each solder ball and associated conductive material.
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