US 6,982,209 B2 | ||
Method of transferring devices by lateral etching of a sacrificial layer | ||
Yu-Cheng Chen, Hsinchu (Taiwan); Wen-Tung Wang, Hsinchu (Taiwan); Jung-Fang Chang, Hsinchu (Taiwan); and Ching-Hsuan Tang, Hsinchu (Taiwan) | ||
Assigned to Industrial Technology Research Institute, Chutung Hsinchu (Taiwan) | ||
Filed on Nov. 12, 2003, as Appl. No. 10/704,795. | ||
Claims priority of application No. 92121727 A (TW), filed on Aug. 07, 2003. | ||
Prior Publication US 2005/0032329 A1, Feb. 10, 2005 | ||
Int. Cl. H01L 21/465 (2006.01) |
U.S. Cl. 438—458 | 15 Claims |
1. A method of transferring devices, comprising steps of:
(a) forming a sacrificial layer on a substrate, wherein the sacrificial layer is made of metal;
(b) forming a buffer layer on the sacrificial layer;
(c) forming devices on the buffer layer;
(d) forming a plurality of etching channels in the buffer layer and between the devices, and the etching channels expose a
portion of the sacrificial layer;
(e) utilizing the etching channels to remove parts of the sacrificial layer by lateral etching, and a plurality of pillars
of the sacrificial layer is remained;
(f) pasting a first transition substrate on the devices; and
(g) separating the substrate from the buffer layer by removing or stripping off the pillars of the sacrificial layer, the
devices are transferred.
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