US 6,982,468 B2 | ||
Semiconductor device and method for manufacturing thereof | ||
Shimpei Tsujikawa, Tokyo (Japan); Toshiyuki Mine, Fussa (Japan); Jiro Yugami, Yokohama (Japan); Natsuki Yokoyama, Mitaka (Japan); and Tsuyoshi Yamauchi, Akishima (Japan) | ||
Assigned to Renesas Technology Corp., Tokyo (Japan); and Hitachi ULSI Systems Co., Ltd., Tokyo (Japan) | ||
Filed on Sep. 16, 2004, as Appl. No. 10/942,014. | ||
Application 10/942014 is a continuation of application No. 10/452126, filed on Jun. 03, 2003, granted, now 6,897,104. | ||
Claims priority of application No. 2002-166630 (JP), filed on Jun. 07, 2002. | ||
Prior Publication US 2005/0029600 A1, Feb. 10, 2005 | ||
Int. Cl. H01L 29/76 (2006.01) |
U.S. Cl. 257—411 | 1 Claim |
1. A semiconductor device comprising:
a first semiconductor domain and a second semiconductor domain isolated from each other by a field dielectric layer for device
isolation formed selectively on a surface of a silicon semiconductor substrate;
a first MOS (Metal Oxide Semiconductor) device having a nitrogen-containing silicon oxide film formed on a surface of the
first semiconductor domain as a gate dielectric; and
a second MOS device having an oxygen-containing silicon nitride film formed on a surface of the second semiconductor domain
as a gate dielectric, the oxygen-containing silicon nitride film being formed from a silicon nitride film having a thickness
of 1.5 nm or less and into which oxygen is introduced to provide an equivalent oxide thickness of 2.5 nm or less,
wherein the nitrogen concentration in the nitrogen-containing silicon oxide film is maximum either at a surface of the silicon
oxide film or at a boundary between the silicon oxide film and the silicon semiconductor substrate, and the oxygen concentration
of the oxygen-containing silicon nitride film is minimum in a portion of the oxygen-containing silicon nitride film intermediate
a surface of the oxygen-containing silicon nitride film and boundary between the oxygen-containing silicon nitride film and
the silicon semiconductor substrate.
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