US 6,982,141 B2
Semiconductor device and manufacturing method thereof
Masanobu Nogome, Bizen (Japan); Akiyoshi Tamura, Suita (Japan); Keiichi Murayama, Okayama (Japan); Kazutsune Miyanaga, Okayama (Japan); and Yoshitaka Kuroishi, Bizen (Japan)
Assigned to Matsushita Electric Industrial Co., Ltd., Osaka (Japan)
Filed on Sep. 10, 2004, as Appl. No. 10/937,366.
Application 10/937366 is a division of application No. 10/630900, filed on Jul. 31, 2003.
Claims priority of application No. 2002-224554 (JP), filed on Aug. 01, 2002; and application No. 2003-174015 (JP), filed on Jun. 18, 2003.
Prior Publication US 2005/0042549 A1, Feb. 24, 2005
Int. Cl. G03F 7/00 (2006.01)
U.S. Cl. 430—311 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor, comprising:
forming a hole in a semiconductor substrate in a front surface of the semiconductor substrate so that the hole extends toward a rear surface of the semiconductor substrate;
forming a metal plating over the front surface of the semiconductor substrate and over an inner surface of the hole;
applying a photosensitive resin to a front side of the semiconductor substrate at the hole while rotating the semiconductor substrate so as to fill at least a portion of the hole and fully cover an opening of the hole with the photosensitive resin;
flattening the photosensitive resin by rotating the semiconductor substrate so as to flatten the photosensitive resin over at least a portion of the front surface of the semiconductor substrate around the hole;
grinding the rear surface of the semiconductor substrate until a rear end of the hole is exposed so as to form a via hole through the semiconductor substrate;
forming a rear side electrode over the rear surface of the semiconductor substrate;
dividing the semiconductor substrate into chips; and
connecting a rear side of the divided semiconductor substrate to an assembly substrate with an adhesive metal.