US 6,982,219 B2 | ||
Semiconductor device with fuse box and method for fabricating the same | ||
Hyun-Chul Kim, Seoul (Korea, Republic of) | ||
Assigned to Samsung Electronics Co., Ltd., Suwon-si (Korea, Republic of) | ||
Filed on Jan. 04, 2005, as Appl. No. 11/29,830. | ||
Application 11/029830 is a division of application No. 10/397905, filed on Mar. 25, 2003, granted, now 6,853,050. | ||
Claims priority of application No. 2002-18540 (KR), filed on Apr. 04, 2002. | ||
Prior Publication US 2005/0116316 A1, Jun. 02, 2005 | ||
Int. Cl. H01L 21/44 (2006.01) |
U.S. Cl. 438—601 | 8 Claims |
1. A method for manufacturing a semiconductor device, the method comprising:
forming a plurality of fuses in a bonding pad region of a semiconductor substrate;
forming a first interlayer insulating film overlying the plurality of fuses;
forming an etching stop layer on the first interlayer insulating film in the bonding pad region;
forming a second interlayer insulating film on the etching stop layer;
forming metal patterns and a first metal line on the second interlayer insulating film in the bonding pad region;
forming a third interlayer insulating film on the metal patterns and the first metal line;
forming a passivation layer overlying the resulting structure;
forming a bonding pad opening in the passivation layer to expose the first metal line; and
forming a fuse box within the bonding pad opening to expose of the first interlayer insulating film over the fuses.
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