US 6,982,440 B2 | ||
Silicon carbide semiconductor devices with a regrown contact layer | ||
Bart J. Van Zeghbroeck, Boulder, Colo. (US); and John T. Torvik, Louisville, Colo. (US) | ||
Assigned to PowerSicel, Inc., Boulder, Colo. (US) | ||
Filed on Jan. 09, 2003, as Appl. No. 10/339,040. | ||
Claims priority of provisional application 60/358440, filed on Feb. 19, 2002. | ||
Prior Publication US 2003/0157745 A1, Aug. 21, 2003 | ||
Int. Cl. H01L 31/0328 (2006.01) |
U.S. Cl. 257—183 | 37 Claims |
1. A method of forming a semiconductor device from Silicon Carbide (SiC), the method comprising the steps of:
growing on a substrate at least a first layer of SiC material having a p-conductivity type in a growth chamber;
removing the device from the growth chamber to perform at least one process on the device; and
subsequent to said removing, regrowing a layer of SiC material having said p-conductivity type on the first layer.
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