US 6,982,447 B2
Ferroelectric memory devices
Hyun-ho Kim, Gyeonggi-do (Korea, Republic of)
Assigned to Samsung Electronics Co., Ltd., (Korea, Republic of)
Filed on Feb. 26, 2004, as Appl. No. 10/788,105.
Claims priority of application No. 10-2003-0013748 (KR), filed on Mar. 05, 2003.
Prior Publication US 2004/0173829 A1, Sep. 09, 2004
Int. Cl. H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/119 (2006.01)
U.S. Cl. 257—295 23 Claims
OG exemplary drawing
 
1. A ferroelectric memory device comprising:
a semiconductor substrate;
a plurality of ferroelectric capacitors, each comprising a bottom electrode, a ferroelectric layer, and an upper electrode layer, wherein the ferroelectric capacitors are arranged in rows and columns on the semiconductor substrate; and
a plurality of columns of plate lines, wherein each of the plate lines is electrically connected to a plurality of the ferroelectric capacitors in a row, wherein
at least two adjacent rows of four adjacent ferroelectric capacitors have a common upper electrode, and at least two of the plate lines are on the common upper electrode.