US 6,982,215 B1 | ||
N type impurity doping using implantation of P2+ ions or As2+ Ions | ||
Buan Heng Lee, Singapore (Singapore); Teck Hong Low, Singapore (Singapore); Hai Rong Wang, Singapore (Singapore); Tang Ying, Singapore (Singapore); and Zadig Cherng-Ching Lam, Arcadia, Calif. (US) | ||
Assigned to Chartered Semiconductor Manufacturing Ltd., Singapore (Singapore) | ||
Filed on Nov. 05, 1998, as Appl. No. 9/186,388. | ||
Int. Cl. H01L 21/425 (2006.01) |
U.S. Cl. 438—514 | 28 Claims |
1. A method of forming source/drain regions, comprising the steps of:
providing a semiconductor integrated circuit wafer having source/drain regions;
providing an ion implant apparatus;
placing a phosphorous ion source in said ion implant apparatus;
adjusting said ion implant apparatus so that said ion implant apparatus produces an ion beam comprising P2+ ions, wherein said ion beam has a beam density and a beam energy;
implanting impurities into said source/drain regions of said integrated circuit wafer, wherein said impurities consist of
P2+ ions implanted using a single ion implantation step and said ion beam; and
annealing said integrated circuit wafer having P2+ ions implanted at an anneal temperature for an anneal time.
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