US 6,982,212 B2 | ||
Method of manufacturing a semiconductor device | ||
Peter Adriaan Stolk, Leuven (Belgium) | ||
Assigned to Koninklijke Philips Electronics N.V., Eindhoven (Netherlands) | ||
Appl. No. 10/497,263 PCT Filed Nov. 20, 2002, PCT No. PCT/IB02/04881 § 371(c)(1), (2), (4) Date May 27, 2004, PCT Pub. No. WO03/046967, PCT Pub. Date Jun. 05, 2003. |
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Claims priority of application No. 01204625 (EP), filed on Nov. 30, 2001. | ||
Prior Publication US 2005/0003638 A1, Jan. 06, 2005 | ||
Int. Cl. H01L 21/20 (2006.01); H01L 21/36 (2006.01) |
U.S. Cl. 438—482 | 12 Claims |
1. A method of manufacturing a semiconductor device (1) with a semiconductor body (2), in which method a doped region (3) is formed in the semiconductor body (2), which semiconductor body (2) comprises a crystalline semiconducting surface region (4) of semiconductor material, while at least a portion of the crystalline semiconducting surface region (4) is amorphized so as to form an amorphous surface layer (5), characterized in that the amorphization is carried out through irradiation of the surface (6) with a radiation pulse (7) having a wavelength whereby radiation of the radiation pulse is absorbed by the crystalline surface region (4), and having energy flux whereby the crystalline surface layer (5) is melted. |