US 6,982,443 B2 | ||
Hollow dielectric for image sensor | ||
Tzu-Hsuan Hsu, Kaohsiung (Taiwan); Shou-Gwo Wuu, Hsin-Chu (Taiwan); Ho-Ching Chien, Jhudong (Taiwan); and Dun-Nian Yaung, Taipei (Taiwan) | ||
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (Taiwan) | ||
Filed on Mar. 12, 2004, as Appl. No. 10/799,986. | ||
Prior Publication US 2005/0199921 A1, Sep. 15, 2005 | ||
Int. Cl. H01L 27/148 (2006.01); H01L 29/768 (2006.01) |
U.S. Cl. 257—226 | 23 Claims |
1. A semiconductor device, comprising:
a workpiece including a first region and a second region;
a sensor formed in the first region;
at least one first insulating layer disposed over the sensor in the first region and disposed over the second region;
a plurality of apertures formed in each at least one first insulating layer over the sensor, and
a second insulating layer disposed over the at least one first insulating layer and the plurality of apertures in the at least
one first insulating layer, wherein each aperture forms a hollow region beneath the second insulating layer within the at
least one first insulating layer.
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