US 6,983,428 B2 | ||
Highly compact non-volatile memory and method thereof | ||
Raul-Adrian Cernea, Santa Clara, Calif. (US) | ||
Assigned to SanDisk Corporation, Sunnyvale, Calif. (US) | ||
Filed on Sep. 24, 2002, as Appl. No. 10/254,483. | ||
Prior Publication US 2004/0060031 A1, Mar. 25, 2004 | ||
Int. Cl. G06F 17/50 (2006.01); G11C 7/00 (2006.01) |
U.S. Cl. 716—1 | 30 Claims |
1. A non-volatile memory device, comprising:
an array of memory cells addressable by a plurality of word lines and bit lines;
a set of read/write circuits for operating on a group of memory cells in parallel via an associated group of bit lines,
each read/write circuit being partitioned into a core portion and a common portion; and wherein:
a stack is formed including the core portions from said set of each read/write circuits in cooperation with at least one common
portion, each core portion connectable to one of said associated group of bit lines and coupled to share said common portion,
thereby resulting in reducing the redundancy in circuitry among the set of read/write circuits.
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