US 6,982,855 B2 | ||
Magnetoresistive head having layer structure between free and lead layers with layer structure including fixed magnetization layer | ||
Koji Shimazawa, Chuo-ku (Japan); Yoshihiro Tsuchiya, Chuo-ku (Japan); and Koichi Terunuma, Chuo-ku (Japan) | ||
Assigned to TDK Corporation, Tokyo (Japan) | ||
Filed on May 12, 2003, as Appl. No. 10/435,059. | ||
Claims priority of provisional application 60/387600, filed on Jun. 12, 2002. | ||
Claims priority of application No. 2002-152800 (JP), filed on May 27, 2002. | ||
Prior Publication US 2003/0218836 A1, Nov. 27, 2003 | ||
Int. Cl. G11B 5/39 (2006.01) |
U.S. Cl. 360—324.12 | 6 Claims |
1. A thin film magnetic head, comprising:
a magnetoresistive element incorporating a free layer an orientation of magnetization of which varies according to an external
magnetic field, and a pair of electrode layers placed so as to overlap with said free layer on both sides of said free layer
and be spaced from each other, for supplying an electric current to said magnetoresistive element,
said thin film magnetic head comprising a layer structure placed between a portion overlapping with said electrode layer in
each of ambilateral regions of said free layer, and said electrode layer,
wherein said layer structure comprises:
an electrically conductive, ferromagnetic layer a direction of magnetization of which is fixed;
an electrically conductive, nonmagnetic layer placed between said ferromagnetic layer and said free layer; and
an electrically conductive, antiferromagnetic layer placed between said ferromagnetic layer and said electrode layer and fixing
the direction of magnetization of said ferromagnetic layer,
wherein a magnetic thickness of said ferromagnetic layer is set greater than a magnetic thickness of said free layer, and
wherein said layer structure further comprises a fixed magnetization layer placed between said antiferromagnetic layer and
said electrode layer and a direction of magnetization of which is fixed in a direction opposite to the direction of magnetization
of said ferromagnetic layer.
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