US 6,982,194 B2 | ||
Semiconductor device and method for manufacturing the same | ||
Akira Tsunoda, Kanagawa (Japan); Shunpei Yamazaki, Setagaya (Japan); and Jun Koyama, Atsugi (Japan) | ||
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (Japan) | ||
Filed on Apr. 19, 2002, as Appl. No. 10/125,790. | ||
Application 10/125790 is a continuation in part of application No. 10/105625, filed on Mar. 26, 2002. | ||
Claims priority of application No. 2001-091493 (JP), filed on Mar. 27, 2001; and application No. 2002-089062 (JP), filed on Mar. 27, 2002. | ||
Prior Publication US 2003/0164500 A1, Sep. 04, 2003 | ||
Int. Cl. H01L 21/84 (2006.01) |
U.S. Cl. 438—157 | 6 Claims |
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first electrode and a first interconnection over an insulating surface;
forming a first insulating film and a second insulating film over the first electrode and the first interconnection,
flattening a surface of the second insulating film by chemical-mechanical polishing;
forming a semiconductor film over the flattened surface of the second insulating film;
forming a third insulating film over the semiconductor film;
making an opening in the first to third insulating films;
exposing a part of the first electrode by the opening;
forming a second electrode and a second interconnection over the third insulating film; and
connecting the first electrode and the second electrode to each other through the opening.
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