US 6,982,453 B2
Semicondutor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof
Hiroyuki Kanaya, Kanagawa (Japan); Toyota Morimoto, Kanagawa (Japan); Osamu Hidaka, Tokyo (Japan); Yoshinori Kumura, Kanagawa (Japan); Iwao Kunishima, Kanagawa (Japan); and Tsuyoshi Iwamoto, Chiba (Japan)
Assigned to Kabushiki Kaisha Toshiba, Kanagawa-ken (Japan)
Filed on Jun. 25, 2003, as Appl. No. 10/602,764.
Application 10/602764 is a division of application No. 09/570026, filed on May 12, 2000, granted, now 6,611,014.
Claims priority of application No. 11-135066 (JP), filed on May 14, 1999.
Prior Publication US 2004/0084701 A1, May 06, 2004
Int. Cl. H01L 27/11 (2006.01); G01C 11/22 (2006.01)
U.S. Cl. 257—306 1 Claim
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate;
a transistor formed on said semiconductor substrate;
an insulating film covering said semiconductor substrate and said transistor;
a contact plug buried in said insulating film and connected to a diffusion layer of said transistor; and
a ferroelectric capacitor formed on said insulating film and connected to said transistor by said contact plug,
said ferroelectric capacitor having a lower electrode, a ferroelectric film formed on said lower electrode, an upper electrode formed on and having an area smaller than said ferroelectric film, and a protective film formed in self alignment with side walls of said upper electrode to cover the surface of said ferroelectric film.