US 6,982,140 B2
Positive resist composition and method of forming resist pattern
Hideo Hada, Kawasaki (Japan); Satoshi Fujimura, Kawasaki (Japan); and Jun Iwashita, Kawasaki (Japan)
Assigned to Tokyo Ohka Kogyo., Ltd., Kawasaki (Japan)
Appl. No. 10/466,172
PCT Filed Nov. 29, 2002, PCT No. PCT/JP02/12538
§ 371(c)(1), (2), (4) Date Jul. 14, 2003,
PCT Pub. No. WO03/048863, PCT Pub. Date Jun. 12, 2003.
Claims priority of application No. 2001-369340 (JP), filed on Dec. 03, 2001.
Prior Publication US 2004/0058269 A1, Mar. 25, 2004
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/004 (2006.01); G03F 7/30 (2006.01)
U.S. Cl. 430—270.1 12 Claims
 
1. A positive type resist composition formed by dissolving (A) a resin component with a unit derived from a (meth)acrylate ester in a principal chain, for which solubility in alkali increases under action of acid, and (B) an acid generator component which generates acid on exposure, in an organic solvent component (C), wherein
said resin component (A) is a copolymer comprising (a1) a unit derived from a (meth)acrylate ester comprising an acid dissociable, dissolution inhibiting group containing a polycyclic group, (a2) a unit derived from a (meth)acrylate ester comprising a lactone containing monocyclic group or polycyclic group, (a3) a unit derived from a (meth)acrylate ester comprising a hydroxyl group containing polycyclic group, and (a4) a unit derived from a (meth)acrylate ester comprising a polycyclic group which is different from said unit (a1), said unit (a2) and said unit (a3).