US 6,982,435 B2 | ||
Group III nitride compound semiconductor device and method for producing the same | ||
Naoki Shibata, Bisai (Japan); Jun Ito, Inazawa (Japan); Toshiaki Chiyo, Ama-gun (Japan); Shizuyo Asami, Inazawa (Japan); Hiroshi Watanabe, Ichinomiya (Japan); and Shinya Asami, Inazawa (Japan) | ||
Assigned to Toyoda Gosei Co., Ltd., Aichi (Japan) | ||
Filed on Nov. 06, 2001, as Appl. No. 9/985,927. | ||
Application 09/985927 is a division of application No. 09/522833, filed on Mar. 10, 2000, granted, now 6,342,404. | ||
Claims priority of application No. 11-092948 (JP), filed on Mar. 31, 1999. | ||
Prior Publication US 2002/0070383 A1, Jun. 13, 2002 | ||
Int. Cl. H01L 31/0256 (2006.01) |
U.S. Cl. 257—76 | 24 Claims |
1. A group III nitride compound semiconductor device comprising:
a silicon substrate on which a first environment division and a second environment division are formed; and
a plurality of first group III nitride compound semiconductor layers formed on said first environment division so as to serve
as effective semiconductor layers,
wherein said first environment division comprises a surface of said silicon substrate, said plurality of first group III nitride
compound semiconductor layers being formed on said surface,
wherein said second environment division comprises silicon oxide formed on said surface of said silicon substrate, and
wherein said plurality of first group III nitride compound semiconductor layers comprises a plurality of stacks of first group
III nitride compound semiconductor layers, said stacks being separated by said silicon oxide and not connected.
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