US 6,982,480 B2
Near hermetic packaging of gallium arsenide semiconductor devices and manufacturing method therefor
Fong Shi, Bellevue, Wash. (US)
Assigned to The Boeing Company, Chicago, Ill. (US)
Filed on Jul. 31, 2003, as Appl. No. 10/630,778.
Prior Publication US 2005/0023558 A1, Feb. 03, 2005
Int. Cl. H01L 23/22 (2006.01); H01L 23/24 (2006.01)
U.S. Cl. 257—687 14 Claims
OG exemplary drawing
 
1. A near-hermetic microwave semiconductor device comprising:
a substrate;
a Monolithic Microwave Integrated Circuit (MMIC) disposed on said substrate;
a sealant disposed on said MMIC and over benzocyclobutene (BCB) as an interlayer dielectric, said sealant comprising a layer of silicon carbide; and
a backside interconnect extending between opposite faces of said MMIC and connecting said substrate to said sealant-coated MMIC.