US 6,982,480 B2 | ||
Near hermetic packaging of gallium arsenide semiconductor devices and manufacturing method therefor | ||
Fong Shi, Bellevue, Wash. (US) | ||
Assigned to The Boeing Company, Chicago, Ill. (US) | ||
Filed on Jul. 31, 2003, as Appl. No. 10/630,778. | ||
Prior Publication US 2005/0023558 A1, Feb. 03, 2005 | ||
Int. Cl. H01L 23/22 (2006.01); H01L 23/24 (2006.01) |
U.S. Cl. 257—687 | 14 Claims |
1. A near-hermetic microwave semiconductor device comprising:
a substrate;
a Monolithic Microwave Integrated Circuit (MMIC) disposed on said substrate;
a sealant disposed on said MMIC and over benzocyclobutene (BCB) as an interlayer dielectric, said sealant comprising a layer
of silicon carbide; and
a backside interconnect extending between opposite faces of said MMIC and connecting said substrate to said sealant-coated
MMIC.
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