US 6,982,224 B2 | ||
Method for forming metal wires in semiconductor device | ||
Ihl Hyun Cho, Daejeon (Korea, Republic of) | ||
Assigned to Hynix Semiconductor Inc., Ichon-Shi (Korea, Republic of) | ||
Filed on Jun. 29, 2004, as Appl. No. 10/878,360. | ||
Claims priority of application No. 10-2004-0027106 (KR), filed on Apr. 20, 2004. | ||
Prior Publication US 2005/0233579 A1, Oct. 20, 2005 | ||
Int. Cl. H01L 21/4763 (2006.01) |
U.S. Cl. 438—637 | 12 Claims |
1. A method for forming metal wires in a semiconductor device, comprising the steps of:
forming a porous dielectric film on a semiconductor substrate as an insulating film between metal wires;
selectively etching the porous dielectric film to form an aperture defining a metal wire region;
infiltrating sealing particles into pores of the porous dielectric film exposed on the sidewall of the aperture;
implementing an annealing process for agglomerating the sealing particles to seal the entrances of the pores of the porous
dielectric film exposed on the sidewall of the aperture;
forming an anti-diffusion film at the bottom and on the sidewall of the aperture;
forming a metal film on the anti-diffusion film; and
polishing the metal film and the anti-diffusion film until the top of the porous dielectric film is formed to metal wires
within the aperture.
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