US 6,982,459 B2 | ||
Semiconductor device having a vertical type semiconductor element | ||
Takashi Suzuki, Aichi-gun (Japan); Tsutomu Uesugi, Aichi-gun (Japan); and Norihito Tokura, Okazaki (Japan) | ||
Assigned to Denso Corporation, Kariya (Japan) | ||
Filed on Aug. 06, 2003, as Appl. No. 10/634,819. | ||
Application 10/634819 is a division of application No. 10/015917, filed on Dec. 17, 2001, granted, now 6,639,260. | ||
Claims priority of application No. 2000-383440 (JP), filed on Dec. 18, 2000. | ||
Prior Publication US 2004/0026735 A1, Feb. 12, 2004 | ||
Int. Cl. H01L 29/76 (2006.01) |
U.S. Cl. 257—329 | 12 Claims |
1. A semiconductor device having a vertical type semiconductor element comprising:
a super junction structure in which a first semiconductor region of a first conductive type and a second semiconductor region
of a second conductive type are alternately aligned;
a plurality of trench gate type MOSFET cells, each MOSFET cell including:
a body region of the second conductive type disposed over said super junction structure, said body region being electrically
connected to said second semiconductor region;
a source region of the first conductive type located in said base region; and
a gate electrode buried in a trench penetrating said body region to said super junction structure; and
an enveloping region of the first conductive type located under said trench to encompass a bottom portion of said trench,
wherein said enveloping region electrically connecting to said first semiconductor region to thereby define a channel between
said source region and said enveloping region, wherein said enveloping region includes a window to provide the electrical
connection between said body region and said second semiconductor region.
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