US 6,982,210 B2 | ||
Method for manufacturing a multilayer semiconductor structure that includes an irregular layer | ||
Bruno Ghyselen, Seyssinet (France); and Takeshi Akatsu, Saint Nazaire les Eymes (France) | ||
Assigned to S.O.I.Tec Silicon on Insulator Technologies S.A., Bernin (France) | ||
Filed on Dec. 03, 2003, as Appl. No. 10/728,341. | ||
Claims priority of application No. 03 08460 (FR), filed on Jul. 10, 2003. | ||
Prior Publication US 2005/0009296 A1, Jan. 13, 2005 | ||
Int. Cl. H01L 21/00 (2006.01) |
U.S. Cl. 438—459 | 21 Claims |
1. A method for manufacturing a multilayer semiconductor structure that includes an irregular layer, comprising:
providing a layer of irregular material on a donor substrate to form an irregular layer having a flat face at an interface
with the donor substrate and having a opposite, irregular face;
creating a weakened zone at a predetermined depth within the donor substrate;
providing an intermediate layer of material that covers the irregular face of the irregular layer, the intermediate layer
providing a substantially flat surface;
bonding the substantially flat surface of the intermediate layer to a receiver substrate; and
detaching the donor substrate along the weakened zone to form the multilayer semiconductor structure that includes a useful
layer, the irregular layer, the intermediate layer and the receiver substrate, wherein all of the irregular material of the
irregular layer is present in the structure.
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