US 6,982,188 B1
Post CMP precursor treatment
James J. Xie, Fremont, Calif. (US); Minh V. Ngo, Fremont, Calif. (US); and Sergey D. Lopatin, Santa Clara, Calif. (US)
Assigned to Advanced Micro Devices, Inc, Sunnyvale, Calif. (US)
Filed on Dec. 03, 2003, as Appl. No. 10/726,829.
Int. Cl. H01L 51/40 (2006.01)
U.S. Cl. 438—99 20 Claims
OG exemplary drawing
 
1. A method for fabricating an organic memory cell comprising:
forming a substrate layer having a surface that acts as a base for an organic memory cell to be created thereupon;
performing a chemical mechanical planarization (CMP) process on the surface;
exposing the surface that has undergone chemical mechanical planarization to an inorganic acid for shaping a surface depression thereupon;
growing a passive layer within the surface depression; and
applying an organic acid to a surface of the grown passive layer, such that a substantially smooth surface texture is obtained.