US 6,982,206 B1
Mechanism for improving the structural integrity of low-k films
Michael J. Berman, Portland, Oreg. (US); Steven E. Reder, Boring, Oreg. (US); and Hemanshu Bhatt, Vancouver, Wash. (US)
Assigned to LSI Logic Corporation, Milpitas, Calif. (US)
Filed on Oct. 02, 2003, as Appl. No. 10/679,004.
Int. Cl. H01L 21/76 (2006.01)
U.S. Cl. 438—400 19 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor integrated circuit dielectric composite firm, the method comprising:
forming a dielectric matrix film on a semiconductor wafer; and
distributing a reinforcing material comprising nanostructure whiskers throughout the dielectric matrix film to form the dielectric composite film wherein said nanostructure whiskers have a length dimension of less than about 100 nanometers.