US 6,982,199 B2 | ||
Bitline of semiconductor device having stud type capping layer and method for fabricating the same | ||
Mun-Mo Jeong, Seoul (Korea, Republic of); Chang-Huhn Lee, Gyeonggi-do (Korea, Republic of); and Makoto Yoshida, Gyeonggi-do (Korea, Republic of) | ||
Assigned to Samsung Electronics Co., Ltd., Suwon-si (Korea, Republic of) | ||
Filed on Aug. 06, 2003, as Appl. No. 10/636,131. | ||
Claims priority of application No. 10-2002-0050246 (KR), filed on Aug. 23, 2002. | ||
Prior Publication US 2004/0056247 A1, Mar. 25, 2004 | ||
Int. Cl. H01L 21/8242 (2006.01) |
U.S. Cl. 438—253 | 15 Claims |
1. A method of fabricating a semiconductor device comprising:
forming an insulating film on a semiconductor substrate;
etching the insulating film to form a bitline contact hole and a groove-shaped bitline pattern;
forming a bitline that fills the bitline contact hole and that fills a portion of the bitline pattern; and
forming a bitline capping layer on the bitline that fills a remaining portion of the bitline pattern and that has a protruded
portion that extends above a surface of the insulating film, wherein the protruded portion is wider than the bitline.
|