US 6,982,186 B2 | ||
CMOS image sensor and method for manufacturing the same | ||
In Gyun Jeon, Icheon-Si (Korea, Republic of); Kwang Soo Kim, Icheon-Si (Korea, Republic of); and Jin Su Han, Icheon-Si (Korea, Republic of) | ||
Assigned to DongbuAnam Semiconductor Inc., Seoul (Korea, Republic of) | ||
Filed on Dec. 30, 2003, as Appl. No. 10/747,302. | ||
Claims priority of application No. 10-2003-0066566 (KR), filed on Sep. 25, 2003. | ||
Prior Publication US 2005/0067639 A1, Mar. 31, 2005 | ||
Int. Cl. H01L 21/00 (2006.01) |
U.S. Cl. 438—73 | 14 Claims |
1. A method for manufacturing a complementary metal oxide semiconductor (CMOS) image sensor, comprising steps of:
forming a field region defining an active region on a silicon substrate;
forming a gate electrode on the substrate;
forming a photodiode in a portion of the active region;
forming a masking layer so as to define a region for implanting dopant ions; and
performing an ion implantation of impurities into the region for implanting dopant ions for forming a lightly doped drain
(LDD) structure, a source region, or a drain region, wherein, in the step of forming the masking layer, the masking layer
is formed over the field region and a portion of the active region adjoining the field region between the gate electrode and
the photodiode so as to define the region for implanting dopant ions.
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