US 6,982,444 B2 | ||
Ferroelectric memory device having a hydrogen barrier film | ||
Hiroyuki Kanaya, Yokohama (Japan); Iwao Kunishima, Yokohama (Japan); Koji Yamakawa, Kawasaki (Japan); Tsuyoshi Iwamoto, Urayasu (Japan); Hiroshi Mochizuki, Musashino (Japan); and Yoshinori Kumura, Yokohama (Japan) | ||
Assigned to Kabushiki Kaisha Toshiba, Kawasaki (Japan) | ||
Filed on May 22, 2003, as Appl. No. 10/443,107. | ||
Application 10/443107 is a division of application No. 09/359324, filed on Jul. 23, 1999, granted, now 6,586,790. | ||
Claims priority of application No. 10-208999 (JP), filed on Jul. 24, 1998; application No. 10-324254 (JP), filed on Nov. 13, 1998; and application No. 10-345368 (JP), filed on Dec. 04, 1998. | ||
Prior Publication US 2004/0056290 A1, Mar. 25, 2004 | ||
Int. Cl. H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01) |
U.S. Cl. 257—295 | 12 Claims |
1. A semiconductor memory device comprising:
a semiconductor substrate;
a first insulator film formed on said substrate;
a ferroelectric capacitor having a bottom electrode, a ferroelectric film and a top electrode, which are sequentially stacked
on said first insulator film, said ferroelectric film being patterned on said bottom electrode having a predetermined pattern
so as to have an area smaller than an area of said bottom electrode;
a first interlayer insulation layer covering the ferroelectric capacitor; and
a first hydrogen barrier film deposited on the first interlayer insulation layer so that at least a top and side of said ferroelectric
capacitor are enveloped by said first interlayer insulation layer, and said first hydrogen barrier film,
wherein said ferroelectric capacitor further comprises a second insulator film formed only directly on said top electrode,
and a third insulator film formed to cover said second insulator film and sides of said top electrode; and
wherein said second and third insulator films are formed between the ferroelectric capacitor and the first interlayer insulation
layer.
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