US 6,982,898 B2 | ||
Molecular memory integrated circuit utilizing non-vibrating cantilevers | ||
Thomas F. Rust, Oakland, Calif. (US) | ||
Assigned to Nanochip, Inc., Fremont, Calif. (US) | ||
Filed on Oct. 14, 2003, as Appl. No. 10/684,883. | ||
Claims priority of provisional application 60/418616, filed on Oct. 15, 2002. | ||
Claims priority of provisional application 60/418618, filed on Oct. 15, 2002. | ||
Prior Publication US 2004/0145848 A1, Jul. 29, 2004 | ||
Int. Cl. G11C 11/00 (2006.01) |
U.S. Cl. 365—151 | 24 Claims |
1. A memory apparatus, comprising:
a media platform having a first substrate comprising silicon dioxide;
a read/write mechanism, including:
a read/write platform having a second substrate comprising silicon dioxide; and
one or more cantilever tips connected with said read/write platform;
a media platform movement mechanism operably attached to said media platform and configured to move said media platform in
response to media control signals; and
a read/write platform movement mechanism operably attached to said read/write platform and configured to move said read/write
platform in response to read/write platform control signals;
wherein at least one of said one or more cantilever tips can cause the formation of an anomaly on said media platform.
|