US 6,982,896 B2 | ||
Nonvolatile ferroelectric memory device having a multi-bit control function | ||
Hee Bok Kang, Daejeon (Korea, Republic of) | ||
Assigned to Hynix Semiconductor Inc., Gyeonggi-do (Korea, Republic of) | ||
Filed on Dec. 18, 2003, as Appl. No. 10/737,833. | ||
Claims priority of application No. 10-2003-0052662 (KR), filed on Jul. 30, 2003. | ||
Prior Publication US 2005/0024913 A1, Feb. 03, 2005 | ||
Int. Cl. G11C 7/14 (2006.01) |
U.S. Cl. 365—145 | 20 Claims |
1. A nonvolatile ferroelectric memory device having a multi-bit control function, comprising:
a plurality of cell array blocks for outputting a plurality of different cell data sensing voltages induced to a main bitline
in a reference timing strobe interval, wherein each of the plurality of cell array blocks comprises a nonvolatile ferroelectric
memory;
a timing data register array unit for comparing the plurality of cell data sensing voltages with a plurality of preset sensing
critical voltages to output comparison results corresponding to a plurality of bit data, and for converting a plurality of
inputted bit data or the plurality of cell data sensing voltages into analog reference level signals; and
a common data bus unit, connected in common to the plurality of cell array blocks, for controlling data exchange between the
plurality of cell array blocks and the timing data register array unit.
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