US 6,982,894 B2
Three-dimensional magnetic memory array with a minimal number of access conductors therein and methods thereof
Garry Mercaldi, Meridian, Id. (US)
Assigned to Micron Technology, Inc., Boise, Id. (US)
Filed on Oct. 22, 2002, as Appl. No. 10/279,613.
Application 10/279613 is a continuation of application No. 09/944965, filed on Aug. 30, 2001, granted, now 6,473,328.
Prior Publication US 2003/0043614 A1, Mar. 06, 2003
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/15 (2006.01); H01L 21/00 (2006.01)
U.S. Cl. 365—130 35 Claims
OG exemplary drawing
 
1. An electronic system comprising:
a magnetic memory with a number N of levels of magnetic memory cells;
a plurality of levels of said magnetic memory cells, each level including at least one magnetic memory core structure having first and second surfaces, said first and second surfaces each connecting to an individual access conductor, wherein N+1 access conductors are employed per said number N of levels of said magnetic memory cells.