US 6,982,446 B2
Nonvolatile magnetic memory device and manufacturing method thereof
Makoto Motoyoshi, Kanagawa (Japan)
Assigned to Sony Corporation, Tokyo (Japan)
Filed on Dec. 31, 2003, as Appl. No. 10/750,263.
Claims priority of application No. P2003-000486 (JP), filed on Jan. 06, 2003.
Prior Publication US 2004/0157427 A1, Aug. 12, 2004
Int. Cl. H01L 29/76 (2006.01)
U.S. Cl. 257—295 1 Claim
OG exemplary drawing
 
1. A nonvolatile magnetic memory device comprising;
(a) a transistor for selection, formed in a semiconductor substrate,
(b) a first insulating interlayer covering the transistor for selection,
(c) a first connecting hole formed in a first opening portion formed through the first insulating interlayer, and connected to the transistor for selection,
(d) a first wiring being formed on the first insulating interlayer and extending in a first direction,
(e) a second insulating interlayer covering the first insulating interlayer and the first wiring,
(f) a tunnel magnetoresistance device being formed on the second insulating interlayer and comprising a tunnel barrier and two ferromagnetic layers, said tunnel barrier being sandwiched between said two ferromagnetic layers, one of the ferromagnetic layers including an anti-ferromagnetic layer and a pinned magnetic layer,
(g) a third insulating interlayer covering the tunnel magnetoresistance device and the second insulating interlayer,
(h) a second wiring being formed on the third insulating interlayer, being electrically connected to one end of the tunnel magnetoresistance device and extending in a second direction different from the first direction, and
(i) a second connecting hole formed in a second opening portion formed through the second insulating interlayer, and connected to the first connecting hole,
in which an end face of an extending portion of the anti-ferromagnetic layer but not the pinned magnetic layer is in contact with the second connecting hole.