US 6,982,103 B2
Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
Cem Basceri, Boise, Id. (US); and Nancy Alzola, Boise, Id. (US)
Assigned to Micron Technology, Inc., Boise, Id. (US)
Filed on Jan. 30, 2004, as Appl. No. 10/769,149.
Application 10/769149 is a continuation of application No. 09/905320, filed on Jul. 13, 2001.
Prior Publication US 2004/0185177 A1, Sep. 23, 2004
Int. Cl. C23C 16/00 (2006.01); C23C 16/06 (2006.01)
U.S. Cl. 427—255.36 29 Claims
OG exemplary drawing
 
1. A chemical vapor deposition method of forming a barium strontium titanate-comprising dielectric layer having a varied concentration of barium and strontium within the layer, comprising:
providing barium and strontium to a substrate by flowing at least one metal organic precursor to the substrate, and providing titanium to the substrate, and flowing a constant composition oxidizer stream to the substrate, under conditions effective to deposit a barium strontium titanate-comprising dielectric layer on the substrate; the barium and strontium being provided to the substrate during all of the deposit of said layer at a substantially constant atomic ratio of barium to strontium; and
during said deposit, changing a rate of flow of the constant composition oxidizer stream to the substrate at least once to effect a change in relative atomic concentration of barium to strontium within the deposited barium strontium titanate-comprising dielectric layer.