US 6,982,193 B2 | ||
Method of forming a super-junction semiconductor device | ||
Zia Hossain, Tempe, Ariz. (US); and Prasad Venkatraman, Gilbert, Ariz. (US) | ||
Assigned to Semiconductor Components Industries, L.L.C., Phoenix, Ariz. (US) | ||
Filed on May 10, 2004, as Appl. No. 10/841,670. | ||
Prior Publication US 2005/0250257 A1, Nov. 10, 2005 | ||
Int. Cl. H01L 21/332 (2006.01); H01L 21/76 (2006.01); H01L 21/22 (2006.01) |
U.S. Cl. 438—135 | 20 Claims |
1. A method of forming a semiconductor device comprising:
providing a substrate of a first conductivity type;
forming a doped layer of the first conductivity type on at least a portion the substrate;
forming a first opening in the doped layer wherein the first opening has sidewalls;
doping a first region of the doped layer juxtaposed to at least a portion of the sidewalls of the first opening to form a
first doped region along the sidewalls and extending into the doped layer leaving a first portion of the doped layer adjacent
to the first doped region and distal from the first opening;
doping a second region of the doped layer between the first region and the sidewalls to form a second doped region along the
sidewalls between a portion of the first doped region and the sidewalls wherein the second doped region has a conductivity
that is opposite to a conductivity of the first doped region; and
forming a transistor on the substrate wherein the second doped region remains distinct from the first doped region.
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