US 6,982,768 B2
Liquid crystal display device
Tatsuya Ohori, Tokyo (Japan); Michiko Takei, Kanagawa (Japan); Hongyong Zhang, Kanagawa (Japan); Hideomi Suzawa, Kanagawa (Japan); and Naoaki Yamaguchi, Kanagawa (Japan)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (Japan)
Filed on Mar. 01, 2001, as Appl. No. 9/797,913.
Application 09/797913 is a division of application No. 09/323559, filed on Jun. 01, 1999, granted, now 6,198,517.
Application 09/323559 is a continuation of application No. 08/808949, filed on Feb. 19, 1997, granted, now 5,929,948.
Claims priority of application No. 8-58330 (JP), filed on Feb. 20, 1996.
Prior Publication US 2001/0052954 A1, Dec. 20, 2001
Int. Cl. G02F 1/136 (2006.01)
U.S. Cl. 349—43 10 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device comprising the steps of:
forming a first wiring over a substrate having an insulating surface;
forming a second wiring over said substrate;
forming an interlayer insulating film over said first wiring and said second wiring;
forming at least first and second contact holes in said interlayer insulating film;
forming a transparent conductive film on said interlayer insulating film and in said first and second contact holes; and
patterning said transparent conductive film to form a connecting electrode which electrically connects said first wiring and said second wiring through said first and second contact holes,
wherein said first wiring is formed on a different layer from said second wiring.