US 7,320,732 B2 | ||
Method for preparing atomistically straight boundary junctions in high temperature superconducting oxides | ||
Siu-Wai Chan, Demarest, N.J. (US) | ||
Assigned to The Trustees of Columbia University in the City of New York, New York, N.Y. (US) | ||
Filed on Jul. 27, 2005, as Appl. No. 11/190,699. | ||
Application 11/190699 is a continuation of application No. PCT/US03/02833, filed on Jan. 31, 2003. | ||
Prior Publication US 2007/0020894 A1, Jan. 25, 2007 | ||
Int. Cl. H01L 21/20 (2006.01) |
U.S. Cl. 117—101 [117/43; 117/89; 438/481; 257/31; 257/E39.014] | 12 Claims |
1. A method of forming an atomistically straight grain boundary in a bicrystal epitaxial film formed on a surface of a substrate,
comprising the steps of:
(a) preparing a bicrystal substrate having a straight grain boundary as a template, wherein the misorientation angle of a
first and a second crystal of the bicrystal substrate is equal to:
arctan k1/h1+arctan k2/h2, where h1 and k1 are the Miller indices of a first grain of the bicrystal substrate and h2 and k2 are the Miller indices of a second grain of the bicrystal substrate; and
(b) depositing the film on the substrate using a layer-by-layer growth mode so that the boundary between the grains of the
film is atomistically straight.
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