US 7,321,508 B2
Magnetic memory device and method for production thereof
Makoto Motoyoshi, Kanagawa (Japan)
Assigned to Sony Corporation, Tokyo (Japan)
Filed on Jul. 28, 2006, as Appl. No. 11/495,090.
Application 11/495090 is a continuation of application No. 11/007381, filed on Dec. 08, 2004, granted, now 7,095,650, filed on Aug. 22, 2006.
Claims priority of application No. 2003-416601 (JP), filed on Dec. 15, 2003.
Prior Publication US 2006/0262597 A1, Nov. 23, 2006
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/14 (2006.01)
U.S. Cl. 365—171  [365/173] 18 Claims
OG exemplary drawing
 
1. A magnetic memory device comprising:
a plurality of tunnel magnetoresistance effect elements, each comprising at least a magnetization pinned layer in which the direction of magnetization is pinned, a tunnel barrier layer, and a magnetic layer in which the direction of magnetization is variable;
a first conducting element formed on one side of each tunnel magnetoresistance effect element with a first insulating layer interposed therebetween; and
a second conducting element formed on the other side of each tunnel magnetoresistance effect element,
wherein information is written into each tunnel magnetoresistance effect element by applying current to the first conducting element and also to the second conducting element, and written information is read out of each tunnel magnetoresistance effect element through a read wiring having a connection to a secondary wiring,
wherein the read wiring is comprised of a contiguous conductive material formed during a different process than a process during which the first and second conducting elements are formed, and
wherein said secondary wiring is separated from said tunnel magnetoresistance effect element by at least a layer containing said first conductive element or said second conductive element.