US 7,320,928 B2
Method of forming a stacked device filler
Grant M. Kloster, Lake Oswego, Oreg. (US); David Staintes, Portland, Oreg. (US); and Shriram Ramanathan, Hillsboro, Oreg. (US)
Assigned to Intel Corporation, Santa Clara, Calif. (US)
Filed on Jun. 20, 2003, as Appl. No. 10/600,203.
Prior Publication US 2004/0256736 A1, Dec. 23, 2004
Int. Cl. H01L 21/30 (2006.01)
U.S. Cl. 438—455  [438/456] 13 Claims
OG exemplary drawing
 
1. A method of forming a stacked semiconductor device, comprising:
forming a layer of material on a portion of a top surface of a substrate, the substrate having an interconnect structure formed thereon;
selectively removing a portion of the layer of material to expose a portion of a top surface of the interconnect structure;
combining the substrate with another substrate to form a stacked semiconductor device;
causing a reaction in a portion of the layer of material wherein a portion of the area between the two substrates is filled with a polymer foam as a product of the reaction.