US 7,321,392 B2
Solid state imaging device with lateral overflow drain and driving method thereof achieving low power consumption
Yoshihiro Okada, Hashima (Japan)
Assigned to Sanyo Electric Co., Ltd., Osaka (Japan)
Filed on Nov. 13, 2003, as Appl. No. 10/712,466.
Claims priority of application No. 2002-332571 (JP), filed on Nov. 15, 2002.
Prior Publication US 2004/0095491 A1, May 20, 2004
Int. Cl. H04N 3/14 (2006.01); H01L 29/768 (2006.01)
U.S. Cl. 348—314  [257/230] 5 Claims
OG exemplary drawing
 
1. A solid state imaging device comprising:
channel regions of one conductivity type arranged to extend along a first direction in parallel to each other with predetermined intervals on one surface of a semiconductor substrate;
a plurality of drain regions of the one conductivity type at high density, which are arranged to extend along the first direction between adjacent channel regions;
a plurality of separation regions disposed in the interval between one of the channel regions and one of the drain regions; and
a plurality of transfer electrodes arranged in parallel to each other to extend along a second direction which intersects the first direction on the semiconductor substrate,
wherein the width of the separation region is narrower in a region beneath at least one transfer electrode in each predetermined set of transfer electrodes than in a region beneath the remaining transfer electrodes in the set of transfer electrodes.