US 7,320,917 B2
Semiconductor device and method for manufacturing the same
Hideaki Ohashi, Kasugai (Japan)
Assigned to Fujitsu Limited, Kawasaki (Japan)
Filed on Oct. 22, 2002, as Appl. No. 10/274,876.
Claims priority of application No. 2002-086439 (JP), filed on Mar. 26, 2002.
Prior Publication US 2003/0183898 A1, Oct. 02, 2003
Int. Cl. H01L 21/00 (2006.01)
U.S. Cl. 438—278  [438/287; 438/197] 35 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device comprising the steps of:
forming at least one gate electrode structure on a semiconductor substrate with a gate insulating film therebetween so that gate length thereof is 110 nm or shorter;
forming a sidewall on the side surface of said gate electrode structure;
after forming said side wall forming a silicon oxide film containing a conductive impurity and covering said gate electrode structure as an interlayer insulating film at film-formation temperature of 650° C. or lower by a high-density plasma CVD method using a film-formation gas containing He so that difference in a surface level due to said gate electrode structure is lessened;
forming holes in said interlayer insulating film, with said gate electrode structure being covered with said interlayer insulating film; and
forming conductive plugs in said holes.