US 7,321,141 B2 | ||
Image sensor device and manufacturing method thereof | ||
Jhy-Jyi Sze, Tai-Nan (Taiwan) | ||
Assigned to United Microelectronics Corp., Hsin-Chu (Taiwan) | ||
Filed on Apr. 18, 2006, as Appl. No. 11/379,057. | ||
Prior Publication US 2007/0243676 A1, Oct. 18, 2007 | ||
Int. Cl. H01L 27/148 (2006.01); H01L 21/00 (2006.01) |
U.S. Cl. 257—233 [257/292; 257/396; 257/446; 257/461; 257/E31.084; 438/75; 438/221; 438/237; 438/425; 438/443; 438/981] | 28 Claims |
1. A method of manufacturing an image sensor comprising steps of:
providing a substrate;
forming a plurality of shallow trench isolations (STIs) for defining and isolating a plurality of active areas, each of which
comprises a photo sensing region;
performing a local oxidation of silicon (LOCOS) process to form a LOCOS layer on the surface of the photo sensing region;
forming a gate of a transistor partially overlapping the LOCOS layer in each active area; and
forming a plurality of doped regions in the substrate.
|