US 7,321,509 B2
Compensating for coupling in non-volatile storage
Jian Chen, San Jose, Calif. (US); Raul-Adrian Cernea, Santa Clara, Calif. (US); and Gertjan Hemink, Yokohama (Japan)
Assigned to Sandisk Corporation, Milpitas, Calif. (US)
Filed on Feb. 16, 2007, as Appl. No. 11/675,632.
Application 11/675632 is a division of application No. 11/099239, filed on Apr. 05, 2005, granted, now 7,196,946.
Prior Publication US 2007/0140006 A1, Jun. 21, 2007
Int. Cl. G11C 11/34 (2006.01)
U.S. Cl. 365—185.03  [365/185.2] 19 Claims
OG exemplary drawing
 
1. A non-volatile memory system, comprising:
a first set of non-volatile storage elements capable of storing data for at least a first grouping and a second grouping;
a second set of non-volatile storage elements adjacent to said first set of non-volatile storage elements, said second set of non-volatile storage elements associated with at least four data states; and
one or more managing circuits in communication with said set of non-volatile storage elements, said one or more managing circuits determine charge level data for said second set of non-volatile storage elements, said one or more managing circuits perform multiple read operations using different reference levels distinguishing between two adjacent data states, each of said first set of non-volatile storage elements choose to record information associated with one of said read operations based on charge level data for a respective adjacent non-volatile storage element of said second set of multi-state non-volatile storage elements, said recorded information indicates data values for said first grouping.