US 7,320,942 B2
Method for removal of metallic residue after plasma etching of a metal layer
Xiaoyi Chen, Foster City, Calif. (US); Chentsau Ying, Cupertino, Calif. (US); Padmapani C. Nallan, San Jose, Calif. (US); Ajay Kumar, Sunnyvale, Calif. (US); Ralph C. Kerns, San Carlos, Calif. (US); Ying Rui, Sunnyvale, Calif. (US); Chun Yan, San Jose, Calif. (US); Guowen Ding, Sunnyvale, Calif. (US); and Wai-Fan Yau, Los Altos, Calif. (US)
Assigned to Applied Materials, Inc., Santa Clara, Calif. (US)
Filed on Nov. 01, 2002, as Appl. No. 10/285,967.
Claims priority of provisional application 60/384686, filed on May 31, 2002.
Claims priority of provisional application 60/382249, filed on May 21, 2002.
Prior Publication US 2003/0219912 A1, Nov. 27, 2003
Int. Cl. H01L 21/302 (2006.01); H01L 21/308 (2006.01)
U.S. Cl. 438—754  [438/906; 438/3] 19 Claims
OG exemplary drawing
 
1. A method for removal of residue after plasma etching a layer comprising a metal using a photoresist etch mask, said layer formed on a substrate, comprising:
cleaning a substrate having metallic residue from etching at least one of tantalum or tantalum nitride in a solution consisting essentially of hydrogen fluoride and deionized water to remove the metallic residue from the substrate.