US 7,320,734 B2 | ||
Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage | ||
Kenneth S. Collins, San Jose, Calif. (US); Hiroji Hanawa, Sunnyvale, Calif. (US); Kartik Ramaswamy, Santa Clara, Calif. (US); Andrew Nguyen, San Jose, Calif. (US); Amir Al-Bayati, San Jose, Calif. (US); Biagio Gallo, Los Gatos, Calif. (US); and Gonzalo Antonio Monroy, San Francisco, Calif. (US) | ||
Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
Filed on Aug. 22, 2003, as Appl. No. 10/646,527. | ||
Application 10/646527 is a continuation in part of application No. 10/164327, filed on Jun. 05, 2002, granted, now 6,939,434. | ||
Application 10/164327 is a continuation in part of application No. 09/636435, filed on Aug. 11, 2000, granted, now 6,494,986, filed on Dec. 17, 2002. | ||
Prior Publication US 2004/0107907 A1, Jun. 10, 2004 | ||
This patent is subject to a terminal disclaimer. | ||
Int. Cl. C23C 16/00 (2006.01); C23F 1/00 (2006.01) |
U.S. Cl. 118—726 [156/345.48] | 22 Claims |
1. A system for processing a workpiece, comprising:
(A) a plasma immersion ion implantation reactor, comprising:
(1) an enclosure comprising a side wall and a ceiling and defining a chamber;
(2) a workpiece support pedestal within the chamber having a workpiece support surface facing said ceiling and defining a
process region extending generally across said wafer support pedestal and confined laterally by said side wall and axially
between said workpiece support pedestal and said ceiling;
(3) said enclosure having at least a first pair of openings at opposite sides of said process region;
(4) a first conductive hollow conduit outside of said chamber having first and second ends connected to respective ones of
said first pair of openings, so as to provide a first reentrant path extending through said conduit and across at least nearly
the entire diameter of said process region, and an annular insulating gap in said first hollow conduit;
(5) an array of gas distribution openings distributed across said ceiling and being encircled by said first reentrant path,
said reactor further comprising a process gas supply coupled to said array of gas distribution openings and adapted to furnish
a gas containing a first species to be ion implanted into a surface layer of said workpiece;
(6) a first RF plasma source power applicator coupled to said first conduit;
(B) a second wafer processing apparatus;
(C) wafer transfer apparatus for transferring said workpiece between said plasma immersion ion implantation reactor and said
second wafer processing apparatus;
wherein said enclosure has a second pair of openings at opposite sides of said process region; and
said reactor further comprising a second conductive hollow conduit outside of said chamber transverse to said first hollow
conduit and having first and second ends connected to respective ones of said second pair of openings, so as to provide a
second reentrant path extending through said conduit and across at least nearly the entire diameter of said process region
and encircling said array of gas distribution openings, and an annular insulating gap in said second hollow conduit and a
second RF source power applicator coupled to said second conduit.
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