US 7,320,928 B2 | ||
Method of forming a stacked device filler | ||
Grant M. Kloster, Lake Oswego, Oreg. (US); David Staintes, Portland, Oreg. (US); and Shriram Ramanathan, Hillsboro, Oreg. (US) | ||
Assigned to Intel Corporation, Santa Clara, Calif. (US) | ||
Filed on Jun. 20, 2003, as Appl. No. 10/600,203. | ||
Prior Publication US 2004/0256736 A1, Dec. 23, 2004 | ||
Int. Cl. H01L 21/30 (2006.01) |
U.S. Cl. 438—455 [438/456] | 13 Claims |
1. A method of forming a stacked semiconductor device, comprising:
forming a layer of material on a portion of a top surface of a substrate, the substrate having an interconnect structure formed
thereon;
selectively removing a portion of the layer of material to expose a portion of a top surface of the interconnect structure;
combining the substrate with another substrate to form a stacked semiconductor device;
causing a reaction in a portion of the layer of material wherein a portion of the area between the two substrates is filled
with a polymer foam as a product of the reaction.
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