US 7,320,174 B2 | ||
Methods for creating ground paths for ILS | ||
Kevin Cowles, Fargo, N. Dak. (US); and A. David Erpelding, San Jose, Calif. (US) | ||
Assigned to Hitachi Global Storage Technologies Netherlands B.V., Amsterdam (Netherlands) | ||
Filed on Dec. 12, 2003, as Appl. No. 10/735,254. | ||
Application 10/735254 is a division of application No. 09/561821, filed on Apr. 28, 2000, granted, now 6,700,748. | ||
Prior Publication US 2004/0187296 A1, Sep. 30, 2004 | ||
Int. Cl. H01K 3/10 (2006.01) |
U.S. Cl. 29—852 [29/603.15; 29/603.16; 29/831; 29/842; 29/860; 29/885; 360/122; 360/126; 360/317; 216/65; 427/127; 427/128] | 21 Claims |
1. A method of creating a conductive path between two or more conductive layers, wherein the conductive layers are separated
by one or more dielectric layers, the method comprising:
forming the dielectric layer with a stepped back edge;
forming a first one of the conductive layers with a stepped back edge that overhangs the stepped back edge of the dielectric
layer, wherein the forming of stepped back edges of the dielectric layer and the first conductive layer exposes a surface
of a second conductive layer;
applying a conductive material to the first conductive layer and the exposed portion of the second conductive layer, the conductive
material creating an electrical coupling between the first and second conductive layers; and
grounding at least one of the conductive layers to a controlled ground potential.
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