US 7,320,905 B2
Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same
Shunpei Yamazaki, Tokyo (Japan); Setsuo Nakajima, Kanagawa (Japan); and Ritsuko Kawasaki, Kanagawa (Japan)
Assigned to Semiconductor Energy Laboratory Co., Ltd., (Japan)
Filed on Dec. 28, 2004, as Appl. No. 11/24,074.
Application 09/821473 is a division of application No. 09/378152, filed on Aug. 20, 1999, granted, now 6,246,070.
Application 11/024074 is a continuation of application No. 09/821473, filed on Mar. 29, 2001, granted, now 6,838,324.
Claims priority of application No. 10-236021 (JP), filed on Aug. 21, 1998; and application No. 10-247643 (JP), filed on Sep. 01, 1998.
Prior Publication US 2005/0116225 A1, Jun. 02, 2005
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/00 (2006.01)
U.S. Cl. 438—149  [438/161; 438/164; 438/166] 55 Claims
OG exemplary drawing
 
1. A method of fabricating a display device, said method comprising the steps of:
forming a gate wiring on an insulating surface;
forming a gate insulating film and an amorphous semiconductor film into a laminate sequentially without exposing them to an atmosphere on the gate wiring;
irradiating the amorphous semiconductor film with at least a light selected from the group consisting of an infrared light and an ultraviolet light to crystallize the amorphous semiconductor film into a crystalline semiconductor film and to form an oxide film at a same time;
covering a first portion of the crystalline semiconductor film with a mask;
providing an impurity element into second portions of the crystalline semiconductor film through the oxide film,
wherein the first portion of the crystalline semiconductor film is a channel forming region while the second portions of the crystalline semiconductor film are source and drain regions.