US 7,321,157 B2 | ||
CoSb3-based thermoelectric device fabrication method | ||
Lidong Chen, Shanghai (China); Junfeng Fan, Shanghai (China); Shengqiang Bai, Shanghai (China); and Jihui Yang, Lakeshore (Canada) | ||
Assigned to GM Global Technology Operations, Inc., Detroit, Mich. (US); and Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian (China) | ||
Filed on Apr. 01, 2005, as Appl. No. 11/96,870. | ||
Claims priority of provisional application 60/590632, filed on Jul. 23, 2004. | ||
Prior Publication US 2006/0017170 A1, Jan. 26, 2006 | ||
Int. Cl. H01L 31/058 (2006.01) |
U.S. Cl. 257—467 [257/930; 257/763; 257/44; 257/45; 257/E31.005; 136/237; 136/240] | 20 Claims |
1. A product comprising:
a thermoelectric device comprising:
a high-temperature electrode;
a buffer layer attached directly to said high-temperature electrode the buffer layer having a roughened surface, wherein the
buffer layer comprises sintered powder or foil;
n-type and p-type legs provided in electrical contact with said buffer layer; wherein each of the n-type and p-type legs are
directly attached to the roughened surface of the buffer layer and
a low-temperature electrode provided in electrical contact with said n-type and p-type legs.
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