US 7,320,945 B2
Gradient low k material
Lih-Ping Li, Hsin-Chu (Taiwan); and Syun-Ming Jang, Hsin-Chu (Taiwan)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (Taiwan)
Filed on Jun. 30, 2004, as Appl. No. 10/881,700.
Prior Publication US 2006/0003598 A1, Jan. 05, 2006
Int. Cl. H01L 21/31 (2006.01)
U.S. Cl. 438—789  [438/623] 6 Claims
OG exemplary drawing
 
1. A method of forming a dielectric layer comprising:
providing a substrate;
beginning a chemical vapor deposition of a dielectric material on the substrate by introducing at least two gases to the substrate; and
varying the flow rate ratio of the at least two gases during deposition of said dielectric material so as to substantially uniformly vary the concentration of at least one of said at least two gases in the resulting dielectric layer, wherein the resulting dielectric layer has a substantially continuously variable permittivity.