US 7,320,908 B2
Methods of forming semiconductor devices having buried oxide patterns
Yong-Hoon Son, Gyeonggi-do (Korea, Republic of); Si-Young Choi, Gyeonggi-do (Korea, Republic of); Byeong-Chan Lee, Gyeonggi-do (Korea, Republic of); Jong-Wook Lee, Gyeonggi-do (Korea, Republic of); In-Soo Jung, Gyeonggi-do (Korea, Republic of); and Deok-Hyung Lee, Gyeonggi-do (Korea, Republic of)
Assigned to Samsung Electronics Co., Ltd., (Korea, Republic of)
Filed on Mar. 04, 2005, as Appl. No. 11/72,103.
Claims priority of application No. 10-2004-0015085 (KR), filed on Mar. 05, 2004.
Prior Publication US 2005/0250279 A1, Nov. 10, 2005
Int. Cl. H01L 21/338 (2006.01)
U.S. Cl. 438—175  [438/700; 438/225] 14 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, comprising:
etching a semiconductor substrate such that the semiconductor substrate defines a trench and a preliminary active pattern, the trench having a floor and a sidewall;
forming an insulating layer on the floor and the sidewall of the trench;
forming a spacer on the insulating layer such that the spacer is on the sidewall of the trench and on a portion of the floor of the trench;
removing the insulating layer on the floor of the trench and beneath the spacer such that a portion of the floor of the trench is at least partially exposed, the spacer is spaced apart from the floor of the trench and a portion of the preliminary active pattern is partially exposed;
partially removing a portion of the exposed portion of the preliminary active pattern to provide an active pattern that defines a recessed portion beneath the spacer; and
forming a buried insulating layer in the recessed portion of the active pattern.