US 7,321,713 B2 | ||
Silicon based on-chip photonic band gap cladding waveguide | ||
Shoji Akiyama, Brighton, Mass. (US); Xiaoman Duan, Amesbury, Mass. (US); Lionel C. Kimerling, Concord, Mass. (US); and Yasha Yi, Cambridge, Mass. (US) | ||
Assigned to Massachusetts Institute of Technology, Cambridge, Mass. (US) | ||
Filed on Sep. 19, 2005, as Appl. No. 11/230,024. | ||
Claims priority of provisional application 60/643196, filed on Jan. 12, 2005. | ||
Claims priority of provisional application 60/611227, filed on Sep. 17, 2004. | ||
Prior Publication US 2006/0088265 A1, Apr. 27, 2006 | ||
Int. Cl. G02B 6/10 (2006.01) |
U.S. Cl. 385—129 | 14 Claims |
1. A waveguide structure comprising:
a core structure comprising low index materials;
a photonic crystal cladding structure utilized in guiding optical modes in said core, said photonic crystal cladding structure
comprises alternating layers of Si and Si3N4, said cladding structure having a thickness of less than 2 microns, said waveguide structure being configured on-chip.
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