US 7,321,151 B2 | ||
Semiconductor device and method of fabricating the same | ||
Takashi Saiki, Kawasaki (Japan); Hiroyuki Ohta, Kawasaki (Japan); and Hiroyuki Kanata, Kawasaki (Japan) | ||
Assigned to Fujitsu Limited, Kawasaki (Japan) | ||
Filed on Mar. 16, 2004, as Appl. No. 10/800,749. | ||
Claims priority of application No. 2003-373499 (JP), filed on Oct. 31, 2003. | ||
Prior Publication US 2005/0095765 A1, May 05, 2005 | ||
Int. Cl. H01L 29/76 (2006.01) |
U.S. Cl. 257—336 [257/408; 257/E29.278; 438/306; 438/E21.435] | 18 Claims |
1. A semiconductor device comprising:
a gate formed over a semiconductor region while placing an insulating film in between;
a first impurity-diffused region formed, as being aligned with said gate, in the surficial layer of said semiconductor region;
a second impurity-diffused region formed, as being distant from said gate while placing a portion of a side of said first
impurity-diffused region in between; and
a third impurity-diffused region formed, as being distant from said gate while placing said portion of said side of said first
impurity-diffused region and a portion of a side of said second impurity-diffused region in between;
wherein said third impurity-diffused region has a higher impurity-concentration than said second impurity-diffused region;
wherein said second impurity-diffused region is formed as containing a diffusion suppressive element for suppressing diffusion
of an impurity contained in said third impurity-diffused region;
wherein said third impurity-diffused region is formed deeper than said second impurity-diffused region;
wherein said diffusion suppressive element is at least any one element selected from germanium, nitrogen, fluorine and carbon
for the case where said impurity contained in said first and third impurity-diffused regions is an n-type impurity.
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