US 7,321,143 B2
Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor
Christian Kunath, Dresden (Germany); and Eberhard Kurth, Moritzburg (Germany)
Assigned to Fraunhofer-Gesellschaft zur Forderun der Angewandten Forschung E.V., Munich (Germany)
Filed on Aug. 24, 2005, as Appl. No. 11/210,420.
Application 11/210420 is a continuation of application No. PCT/EP03/02359, filed on Mar. 07, 2003.
Prior Publication US 2006/0035420 A1, Feb. 16, 2006
Int. Cl. H01L 29/76 (2006.01)
U.S. Cl. 257—288  [257/350] 14 Claims
OG exemplary drawing
 
1. An ion-sensitive field effect transistor with a gate comprising a sensitive layer, wherein the sensitive layer comprises a metal oxide nitride alloy and/or a metal oxide nitride compound, wherein the metal oxide nitride alloy is a hafnium tantalum oxide nitride alloy and the metal oxide nitride compound is a hafnium tantalum oxide nitride compound.