US 7,321,392 B2 | ||
Solid state imaging device with lateral overflow drain and driving method thereof achieving low power consumption | ||
Yoshihiro Okada, Hashima (Japan) | ||
Assigned to Sanyo Electric Co., Ltd., Osaka (Japan) | ||
Filed on Nov. 13, 2003, as Appl. No. 10/712,466. | ||
Claims priority of application No. 2002-332571 (JP), filed on Nov. 15, 2002. | ||
Prior Publication US 2004/0095491 A1, May 20, 2004 | ||
Int. Cl. H04N 3/14 (2006.01); H01L 29/768 (2006.01) |
U.S. Cl. 348—314 [257/230] | 5 Claims |
1. A solid state imaging device comprising:
channel regions of one conductivity type arranged to extend along a first direction in parallel to each other with predetermined
intervals on one surface of a semiconductor substrate;
a plurality of drain regions of the one conductivity type at high density, which are arranged to extend along the first direction
between adjacent channel regions;
a plurality of separation regions disposed in the interval between one of the channel regions and one of the drain regions;
and
a plurality of transfer electrodes arranged in parallel to each other to extend along a second direction which intersects
the first direction on the semiconductor substrate,
wherein the width of the separation region is narrower in a region beneath at least one transfer electrode in each predetermined
set of transfer electrodes than in a region beneath the remaining transfer electrodes in the set of transfer electrodes.
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