US 7,321,154 B2 | ||
Refractory metal-based electrodes for work function setting in semiconductor devices | ||
Luigi Colombo, Dallas, Tex. (US); James J Chambers, Dallas, Tex. (US); and Mark R Visokay, Richardson, Tex. (US) | ||
Assigned to Texas Instruments Incorporated, Dallas, Tex. (US) | ||
Filed on Aug. 17, 2006, as Appl. No. 11/465,219. | ||
Application 11/465219 is a division of application No. 10/852523, filed on May 24, 2004, granted, now 7,098,516. | ||
Prior Publication US 2006/0273414 A1, Dec. 07, 2006 | ||
Int. Cl. H01L 29/76 (2006.01) |
U.S. Cl. 257—407 [257/412; 257/388; 257/E21.006] | 6 Claims |
1. A dual gate integrated circuit, comprising:
first and second gate structures with each comprising:
a gate dielectric located over a semiconductor substrate having a conduction band and a valence band, said gate dielectric
including a refractory metal; and
a gate located over said gate dielectric and including said refractory metal, wherein said gate of said first gate structure
has a work function aligned toward said conduction band and said gate of said second gate structure has a work function aligned
toward said valence band; and
interconnect metal lines on one or more insulating layers located over said first and second gate structures and interconnecting
said first and second gate structures to form an operative integrated circuit.
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