US 7,320,169 B2 | ||
Self-pinned GMR structure by annealing | ||
Yun-Fei Li, Fremont, Calif. (US); Hui-Chuan Wang, Pleasanton, Calif. (US); Tong Zhao, Milpitas, Calif. (US); and Chyu-Jiuh Torng, Pleasanton, Calif. (US) | ||
Assigned to Headway Technologies, Inc., Milpitas, Calif. (US) | ||
Filed on May 14, 2004, as Appl. No. 10/846,406. | ||
Prior Publication US 2005/0252576 A1, Nov. 17, 2005 | ||
Int. Cl. G11B 5/31 (2006.01); G11B 5/39 (2006.01); G11B 5/147 (2006.01) |
U.S. Cl. 29—603.14 [148/103; 148/108] | 20 Claims |
1. A method to reduce shunt resistance in a spin valve, comprising:
including in said spin valve a layer of IrMn for use as a pinning layer;
annealing said spin valve at between about 100 and 300% C for from about 0.5 to 10 hours in the presence of a magnetic field
of from about 6,000 to about 20,000 Oe; and
then reducing said magnetic field to between about 50 and 2,000 Oe and allowing said spin valve to cool.
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