US 7,320,922 B2
Integrated circuit and method for manufacturing an integrated circuit on a semiconductor chip
Christoph Bromberger, Heilbronn (Germany)
Assigned to Atmel Germany GmbH, Heilbronn (Germany)
Filed on Nov. 15, 2005, as Appl. No. 11/273,083.
Claims priority of application No. 10 2004 055 213 (DE), filed on Nov. 16, 2004.
Prior Publication US 2006/0105535 A1, May 18, 2006
Int. Cl. H01L 21/331 (2006.01)
U.S. Cl. 438—338  [438/334; 438/336; 438/343; 438/357] 17 Claims
OG exemplary drawing
 
1. A method for manufacturing an integrated circuit on a semiconductor chip, the method comprising:
providing a first bipolar transistor having a first collector region of a first conductivity type; and
providing a second bipolar transistor with a second collector region having the first conductivity type;
growing the first collector region and the second collector region by at least one collector epitaxy;
introducing an etch stop in the first collector region; and
shortening the first collector region in comparison to the second collector region by a partial etching of the first collector region.