US 7,320,714 B2
High surface area porous aluminum electrode in electrolytic capacitors using solid freeform fabrication
Milan Keser, Chandler, Ariz. (US)
Assigned to Intel Corporation, Santa Clara, Calif. (US)
Filed on Jul. 08, 2004, as Appl. No. 10/888,293.
Application 10/888293 is a division of application No. 09/961475, filed on Sep. 24, 2001, granted, now 6,785,123.
Prior Publication US 2004/0246659 A1, Dec. 09, 2004
Int. Cl. H01G 9/00 (2006.01)
U.S. Cl. 29—25.03  [361/509] 9 Claims
OG exemplary drawing
 
1. A method comprising:
constructing a porous aluminum anode having a porous volume for use in a capacitor by a solid freeform fabrication (SFF) process, the porous aluminum anode having a plurality of pores, each of the plurality of pores having a pore size, constructing comprising
sintering aluminum powder to form the porous aluminum anode using a guided laser beam;
infiltrating an electrolyte in the plurality of pores; and
forming an oxide layer on the porous aluminum anode to provide a dielectric for the capacitor.