US 7,321,170 B2 | ||
High frequency semiconductor device | ||
Yoshihiro Notani, Tokyo (Japan) | ||
Assigned to Mitsubishi Denki Kabushiki Kaisha, Tokyo (Japan) | ||
Filed on Feb. 08, 2006, as Appl. No. 11/349,087. | ||
Claims priority of application No. 2005-049042 (JP), filed on Feb. 24, 2005. | ||
Prior Publication US 2006/0187977 A1, Aug. 24, 2006 | ||
Int. Cl. H01L 23/48 (2006.01) |
U.S. Cl. 257—773 [257/734; 324/765] | 9 Claims |
1. A high frequency semiconductor device comprising:
a semiconductor substrate;
a high frequency semiconductor element on said semiconductor substrate;
a high frequency signal transmission line on said semiconductor substrate and having a first end connected to said high frequency
semiconductor element;
a high frequency signal input/output pad on said semiconductor substrate and connected to a second end of said high frequency
signal transmission line, said high frequency signal input/output pad extending perpendicular to a length direction of said
high frequency signal transmission line; and
ground potential pads on said semiconductor substrate, said ground potential pads being disposed on opposite longitudinal
sides of said high frequency signal input/output pad.
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