US 7,320,855 B2 | ||
Silicon containing TARC/barrier layer | ||
Wu-Song S. Huang, Poughkeepsie, N.Y. (US); Sean D. Burns, Yorktown Heights, N.Y. (US); and Pushkara Rao Varanasi, Poughkeepsie, N.Y. (US) | ||
Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
Filed on Nov. 03, 2004, as Appl. No. 10/980,365. | ||
Prior Publication US 2006/0093959 A1, May 04, 2006 | ||
Int. Cl. G03F 7/36 (2006.01); G03F 7/20 (2006.01); G03F 7/09 (2006.01); G03C 1/825 (2006.01) |
U.S. Cl. 430—311 [430/325; 430/326; 430/313; 430/316; 430/317; 430/318] | 13 Claims |
1. A method of forming a patterned material layer on a substrate, the method comprising:
providing a substrate having a material layer on a surface thereof;
depositing a photoresist composition on the substrate to form a photoresist layer on the material layer;
applying a top antireflective/barrier layer material on the photoresist layer, thereby forming a coated substrate, the top
antireflective coating and barrier layer material comprising at least one silicon-containing moiety and at least one aqueous
base soluble moiety;
patternwise exposing the coated substrate to imaging radiation;
removing simultaneously the top antireflective/barrier layer material and portions of the photoresist layer from the coated
substrate, thereby forming a patterned photoresist layer on the material layer; and
transferring the photoresist layer pattern to the material layer.
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