US 7,320,943 B2
Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same
Kee-Jeung Lee, Ichon-shi (Korea, Republic of)
Assigned to Hynix Semiconductor Inc., (Korea, Republic of)
Filed on Jun. 30, 2004, as Appl. No. 10/883,322.
Claims priority of application No. 10-2003-0098534 (KR), filed on Dec. 29, 2003.
Prior Publication US 2005/0139965 A1, Jun. 30, 2005
Int. Cl. H01L 21/31 (2006.01); H01L 21/469 (2006.01)
U.S. Cl. 438—778  [438/785; 257/E21.193; 257/E21.279; 257/E21.29; 257/E21.648; 257/E21.28] 25 Claims
OG exemplary drawing
 
1. A method for fabricating a capacitor, comprising:
forming at least one bottom electrode;
depositing an amorphous Hf1-xLaxO layer on the bottom electrode wherein x is between 0.03 and 0.1;
performing a thermal process for crystallizing the Hf1-xLaxO layer and removing impurities existed therein; and
forming a top electrode on the crystallized Hf1-xLaxO layer.