US 7,321,148 B2 | ||
Capacitor constructions and rugged silicon-containing surfaces | ||
Guy T. Blalock, Boise, Id. (US); Lyle D. Breiner, Meridian, Id. (US); Er-Xuan Ping, Meridian, Id. (US); and Shenlin Chen, Boise, Id. (US) | ||
Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
Filed on Aug. 06, 2004, as Appl. No. 10/913,275. | ||
Application 10/913275 is a division of application No. 10/655654, filed on Sep. 05, 2003, granted, now 6,887,755. | ||
Prior Publication US 2005/0051827 A1, Mar. 10, 2005 | ||
Int. Cl. H01L 27/108 (2006.01) |
U.S. Cl. 257—306 [257/309] | 5 Claims |
1. A capacitor, comprising:
a first electrode, the first electrode comprising a rugged silicon-containing surface having a base and substantially conical
hills extending upwardly from the base, all of the hills having widths at half height of less than or equal to about 500 Å;
a dielectric material over the rugged silicon-containing surface; and
a second electrode spaced from the first electrode by at least the dielectric material;
wherein the rugged silicon-containing surface consists of doped amorphous silicon, the surface having been exposed to at least
one hydrogen isotope in a reaction chamber prior to being seeded with seed crystals used to form the rugged silicon-containing
surface.
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