US 7,320,937 B1 | ||
Method of reliably electroless-plating integrated circuit die | ||
Rathindra N. Pal, Beltsville, Md. (US); and Kingsley R. Berlin, Odenton, Md. (US) | ||
Assigned to The United States of America as represented by the National Security Agency, Washington, D.C. (US) | ||
Filed on Oct. 19, 2005, as Appl. No. 11/253,879. | ||
Int. Cl. H01L 21/44 (2006.01) |
U.S. Cl. 438—678 [438/677; 257/E21.174; 257/E21.224] | 13 Claims |
1. Method of electroless-plating at least one integrated circuit die, comprising the steps of:
(a) receiving the at least one integrated circuit die, where each at least one integrated circuit die has a pad side and a
backside;
(b) attaching the at least one integrated circuit die backside to a holder, where the holder has a dielectric adhesive layer
applied thereto;
(c) cleaning the at least one integrated circuit die with more than one cleaning solution;
(d) rinsing each at least one integrated circuit die in de-ionized water after each cleaning in the more than one cleaning
solution;
(e) immersing the at least one integrated circuit die into a first metal oxide etchant for a user-definable time;
(f) cleaning the at least one integrated circuit die in de-ionized water;
(g) immersing the at least one integrated circuit die into a first metal solution for a user-definable time, where the first
metal solution is at a user-definable temperature;
(h) cleaning the at least one integrated circuit die in de-ionized water;
(i) immersing the at least one integrated circuit die into a second metal etchant solution for user-definable time;
(j) cleaning the at least one integrated circuit die in de-ionized water;
(k) immersing the at least one integrated circuit die into the first metal solution for a user-definable time, where the first
metal solution is at a user-definable temperature;
(l) cleaning the at least one integrated circuit die in de-ionized water;
(m) plating a user-definable thickness of a second metal onto the padside of the at least one integrated circuit die;
(n) cleaning the at least one integrated circuit die in de-ionized water; and
(o) immersing the at least one integrated circuit die in a third metal solution for a user-definable time, where the third
metal solution is at a user-definable temperature, and where the third metal solution is stirred at a user-definable rate.
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