US 7,320,920 B2 | ||
Non-volatile flash memory device having at least two different channel concentrations and method of fabricating the same | ||
Sang-Su Kim, Suwon-si (Korea, Republic of); Sung-Taeg Kang, Seoul (Korea, Republic of); In-Wook Cho, Yongin-si (Korea, Republic of); and Jeong-Hwan Yang, Suwon-si (Korea, Republic of) | ||
Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
Filed on Apr. 04, 2005, as Appl. No. 11/97,281. | ||
Claims priority of application No. 10-2004-0045142 (KR), filed on Jun. 17, 2004. | ||
Prior Publication US 2006/0011965 A1, Jan. 19, 2006 | ||
Int. Cl. H01L 21/334 (2006.01) |
U.S. Cl. 438—287 [438/289; 257/E21.423] | 21 Claims |
1. A method of fabricating a non-volatile flash memory device, comprising:
defining a cell active region in a semiconductor substrate;
performing a first ion implantation into the cell active region to form a first channel region;
sequentially stacking a tunneling layer, a charge trap layer and a passivation layer on the semiconductor substrate;
forming a first photoresist pattern on the semiconductor substrate having the passivation layer, the first photoresist pattern
exposing a portion of the passivation layer on the first channel region;
performing a second ion implantation using the first photoresist pattern as a mask to form a second channel region in the
semiconductor substrate;
sequentially patterning the passivation layer, the charge trap layer and the tunneling layer using the first photoresist pattern
as a mask; and
removing the first photoresist pattern.
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