US 7,320,911 B2 | ||
Methods of forming pluralities of capacitors | ||
Cem Basceri, Sterling, Va. (US); and Gurtej S. Sandhu, Boise, Id. (US) | ||
Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
Filed on Dec. 06, 2004, as Appl. No. 11/6,331. | ||
Prior Publication US 2006/0121672 A1, Jun. 08, 2006 | ||
Int. Cl. H01L 21/70 (2006.01); H01L 21/8242 (2006.01) |
U.S. Cl. 438—239 [438/243; 438/386; 257/E21.648] | 82 Claims |
1. A method of forming a plurality of capacitors, comprising:
providing a plurality of capacitor electrodes comprising sidewalls;
supporting the plurality of capacitor electrodes at least in part with a retaining structure which engages the sidewalls,
the retaining structure comprising a fluid previous material having plural fluid passageways;
depositing a capacitor dielectric material over the capacitor electrodes through the fluid previous material of the retaining
structure effective to deposit capacitor dielectric material over portions of the sidewalls received below the retaining structure;
and
depositing capacitor electrode material over the capacitor dielectric material through the fluid previous material of the
retaining structure effective to deposit capacitor electrode material over at least some of the capacitor dielectric material
received below the retaining structure.
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