US RE40,009 E1
Methods and apparatus for adjusting beam parallelism in ion implanters
Joseph C. Olson, Beverly, Mass. (US); and Anthony Renau, West Newbury, Mass. (US)
Assigned to Varian Semiconductor Equipment Associates, Inc., Gloucester, Mass. (US)
Filed on Aug. 20, 2004, as Appl. No. 10/922,783.
Application 10/922783 is a reissue of application No. 09/649183, filed on Aug. 28, 2000, now 6,437,350, filed on Aug. 20, 2002.
Int. Cl. H01J 37/08 (2006.01)
U.S. Cl. 250—492.21  [250/492.2; 250/396 R; 250/492.3] 60 Claims
OG exemplary drawing
 
[ 27. A method for implanting ions into a workpiece, comprising:
generating an ion beam;
measuring a beam direction of the ion beam without implanting any workpiece with the ion beam;
tilting a workpiece about an axis that is not parallel to the measured beam direction at an implant angle referenced to the measured beam direction; and
performing an implant with the workpiece tilted at the implant angle.]