US 7,321,503 B2 | ||
Method of driving memory device to implement multiple states | ||
Won Jae Joo, Gyeonggi-do (Korea, Republic of); Yoon Sok Kang, Gyeonggi-do (Korea, Republic of); and Kwang Hee Lee, Gyeonggi-do (Korea, Republic of) | ||
Assigned to Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do (Korea, Republic of) | ||
Filed on Sep. 20, 2005, as Appl. No. 11/229,708. | ||
Claims priority of application No. 10-2005-0005444 (KR), filed on Jan. 20, 2005. | ||
Prior Publication US 2006/0160307 A1, Jul. 20, 2006 | ||
Int. Cl. G11C 11/00 (2006.01) |
U.S. Cl. 365—148 [365/115] | 25 Claims |
1. A method of driving a multi-state organic memory device comprising an organic memory layer between upper and lower electrodes,
comprising:
a first step of continuously applying pulses having different polarities to conduct switching into a low resistance state;
and
a second step of applying a single pulse to the upper and lower electrodes to conduct switching into a high resistance state.
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