US 7,321,503 B2
Method of driving memory device to implement multiple states
Won Jae Joo, Gyeonggi-do (Korea, Republic of); Yoon Sok Kang, Gyeonggi-do (Korea, Republic of); and Kwang Hee Lee, Gyeonggi-do (Korea, Republic of)
Assigned to Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do (Korea, Republic of)
Filed on Sep. 20, 2005, as Appl. No. 11/229,708.
Claims priority of application No. 10-2005-0005444 (KR), filed on Jan. 20, 2005.
Prior Publication US 2006/0160307 A1, Jul. 20, 2006
Int. Cl. G11C 11/00 (2006.01)
U.S. Cl. 365—148  [365/115] 25 Claims
OG exemplary drawing
 
1. A method of driving a multi-state organic memory device comprising an organic memory layer between upper and lower electrodes, comprising:
a first step of continuously applying pulses having different polarities to conduct switching into a low resistance state; and
a second step of applying a single pulse to the upper and lower electrodes to conduct switching into a high resistance state.