US 7,321,140 B2 | ||
Magnetron sputtered metallization of a nickel silicon alloy, especially useful as solder bump barrier | ||
Yanping Li, Mountain View, Calif. (US); Jriyan Jerry Chen, Santa Clara, Calif. (US); and Lisa Yang, Saratoga, Calif. (US) | ||
Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
Filed on Mar. 11, 2005, as Appl. No. 11/77,943. | ||
Prior Publication US 2006/0202352 A1, Sep. 14, 2006 | ||
Int. Cl. H01L 29/73 (2006.01) |
U.S. Cl. 257—203 [257/E29.143; 257/E29.139; 257/203; 438/612; 438/613; 438/614; 438/615] | 24 Claims |
1. A solder contact structure formed in an integrated circuit, comprising:
a bonding pad comprising a metal region formed at a surface of an integrated circuit; and
a barrier layer comprising a nickel silicon alloy comprising nickel and silicon formed over and defined around said bonding
pad and adapted to contact a solder bump.
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