US 7,320,815 B2 | ||
Method for forming oriented film, oriented film, substrate for electronic device, liquid crystal panel, and electronic device | ||
Hidenobu Ota, Suwa (Japan); and Yukihiro Endo, Suwa (Japan) | ||
Assigned to Seiko Epson Corporation, (Japan) | ||
Filed on Sep. 01, 2004, as Appl. No. 10/931,803. | ||
Claims priority of application No. 2003-313320 (JP), filed on Sep. 04, 2003. | ||
Prior Publication US 2005/0084624 A1, Apr. 21, 2005 | ||
Int. Cl. B05D 5/12 (2006.01); C23C 14/48 (2006.01); C23C 14/24 (2006.01); C23C 14/54 (2006.01); C23C 16/26 (2006.01); C23C 16/36 (2006.01) |
U.S. Cl. 427—526 [427/528; 427/529; 427/523; 427/249.1; 427/249.7; 427/249.9; 427/58] | 8 Claims |
1. A method for forming an oriented film on a base material for a liquid crystal device having a liquid crystal therein, comprising
steps of:
irradiating a surface of said base material with an ion beam comprising nitrogen ions from a direction inclined at a prescribed
angle, θa, with respect to a direction perpendicular to said surface, and
simultaneously evaporating carbon from an evaporation source to deposit on the surface being irradiated while performing said
irradiating step to form the oriented film,
wherein the oriented film has unsaturated C—N bonds and a plurality of π electron orbitals formed on a surface of the oriented
film at a predetermined pretilt angle, said π electron orbitals interacting with the liquid crystal to to orient the liquid
crystal.
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