US 7,320,714 B2 | ||
High surface area porous aluminum electrode in electrolytic capacitors using solid freeform fabrication | ||
Milan Keser, Chandler, Ariz. (US) | ||
Assigned to Intel Corporation, Santa Clara, Calif. (US) | ||
Filed on Jul. 08, 2004, as Appl. No. 10/888,293. | ||
Application 10/888293 is a division of application No. 09/961475, filed on Sep. 24, 2001, granted, now 6,785,123. | ||
Prior Publication US 2004/0246659 A1, Dec. 09, 2004 | ||
Int. Cl. H01G 9/00 (2006.01) |
U.S. Cl. 29—25.03 [361/509] | 9 Claims |
1. A method comprising:
constructing a porous aluminum anode having a porous volume for use in a capacitor by a solid freeform fabrication (SFF) process,
the porous aluminum anode having a plurality of pores, each of the plurality of pores having a pore size, constructing comprising
sintering aluminum powder to form the porous aluminum anode using a guided laser beam;
infiltrating an electrolyte in the plurality of pores; and
forming an oxide layer on the porous aluminum anode to provide a dielectric for the capacitor.
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