US 7,321,158 B2 | ||
Method of manufacturing variable capacitance diode and variable capacitance diode | ||
Yutaka Nabeshima, Osaka (Japan) | ||
Assigned to Matsushita Electric Industrial Co., Ltd., Osaka (Japan) | ||
Filed on Dec. 15, 2004, as Appl. No. 11/11,037. | ||
Claims priority of application No. P2003-416209 (JP), filed on Dec. 15, 2003; and application No. P2004-110683 (JP), filed on Apr. 05, 2004. | ||
Prior Publication US 2005/0148149 A1, Jul. 07, 2005 | ||
Int. Cl. H01L 29/00 (2006.01) |
U.S. Cl. 257—499 | 6 Claims |
1. A variable capacitance diode, comprising:
a semiconductor substrate and a plurality of units disposed in an array on the semiconductor substrate, each of the units
including:
a first semiconductor region of a first conductive type having a low impurity concentration;
a second semiconductor region of the first conductive type having an intermediate impurity concentration;
a third semiconductor region of a second conductive type having a high impurity concentration; and
an annular contact layer of the first conductive type in the periphery of the third semiconductor region, wherein a side surface
of the third semiconductor region is connected to the first semiconductor region, and a bottom surface of the third semiconductor
region is connected to the second semiconductor region.
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