US 7,320,932 B2 | ||
Semiconductor device and manufacturing method thereof | ||
Shinji Yamaguchi, Tenri (Japan); Takuro Asazu, Nara (Japan); and Atsushi Ono, Yamatokoriyama (Japan) | ||
Assigned to Sharp Kabushiki Kaisha, Osaka (Japan) | ||
Filed on Mar. 20, 2006, as Appl. No. 11/378,650. | ||
Application 11/378650 is a division of application No. 10/326976, filed on Dec. 24, 2002, granted, now 7,045,894. | ||
Claims priority of application No. 2001-392543 (JP), filed on Dec. 25, 2001. | ||
Prior Publication US 2006/0157850 A1, Jul. 20, 2006 | ||
Int. Cl. H01L 21/44 (2006.01); H01L 23/52 (2006.01) |
U.S. Cl. 438—611 [257/748] | 11 Claims |
1. A manufacturing method of a semiconductor device, wherein a first protection film is formed on a semiconductor substrate
expect at a portion on an electrode pad, and a protrusion electrode whose surface is coated with a coating layer is further
formed on the electrode pad comprising the steps of:
(A) forming the protrusion electrode on the electrode pad with electroless plating;
(B) forming a second protection film, so as to cover at least a gap at a boundary portion of the first protection film and
said protrusion electrode, having an opening on a top area of said protrusion electrode except a portion around the boundary
portion of said first protection film and said protrusion electrode; and
(C) forming the coating layer for coating the surface of said protrusion electrode at the opening of said second protection
film.
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