US 7,320,932 B2
Semiconductor device and manufacturing method thereof
Shinji Yamaguchi, Tenri (Japan); Takuro Asazu, Nara (Japan); and Atsushi Ono, Yamatokoriyama (Japan)
Assigned to Sharp Kabushiki Kaisha, Osaka (Japan)
Filed on Mar. 20, 2006, as Appl. No. 11/378,650.
Application 11/378650 is a division of application No. 10/326976, filed on Dec. 24, 2002, granted, now 7,045,894.
Claims priority of application No. 2001-392543 (JP), filed on Dec. 25, 2001.
Prior Publication US 2006/0157850 A1, Jul. 20, 2006
Int. Cl. H01L 21/44 (2006.01); H01L 23/52 (2006.01)
U.S. Cl. 438—611  [257/748] 11 Claims
OG exemplary drawing
 
1. A manufacturing method of a semiconductor device, wherein a first protection film is formed on a semiconductor substrate expect at a portion on an electrode pad, and a protrusion electrode whose surface is coated with a coating layer is further formed on the electrode pad comprising the steps of:
(A) forming the protrusion electrode on the electrode pad with electroless plating;
(B) forming a second protection film, so as to cover at least a gap at a boundary portion of the first protection film and said protrusion electrode, having an opening on a top area of said protrusion electrode except a portion around the boundary portion of said first protection film and said protrusion electrode; and
(C) forming the coating layer for coating the surface of said protrusion electrode at the opening of said second protection film.