US 7,320,938 B2 | ||
Method for reducing dendrite formation in nickel silicon salicide processes | ||
Robert J. Purtell, West Jordan, Utah (US); Yun-Yu Wang, Poughquag, N.Y. (US); and Keith Kwong Hon Wong, Wappingers Falls, N.Y. (US) | ||
Assigned to Internatioanl Business Machines Corporation, Armonk, N.Y. (US) | ||
Filed on Jul. 28, 2006, as Appl. No. 11/460,671. | ||
Application 11/460671 is a continuation of application No. 11/161064, filed on Jul. 21, 2005, granted, now 7,109,116. | ||
Prior Publication US 2007/0020929 A1, Jan. 25, 2007 | ||
Int. Cl. H01L 21/44 (2006.01) |
U.S. Cl. 438—682 [438/664] | 7 Claims |
1. A method for reducing dendrite formation in a self-aligned, silicide process for a semiconductor device, the method comprising:
forming an initial metal silicon layer directly on exposed portions of a silicon containing substrate;
said initial metal silicon layer formed in a manner so as to reduce the concentration of metal rich portions thereof through
the introduction of silicon thereto; and
performing a single silicide anneal of said initial metal silicon layer so as to completely react the metal in said initial
metal silicon layer over said exposed portions of said silicon containing substrate, thereby forming a silicide over said
exposed portions of said silicon containing substrate;
wherein the single silicide anneal is performed on said initial metal silicon layer without also increasing the metal concentration
of any portions of the initial metal silicon layer beforehand.
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