US 7,321,274 B2 | ||
RF switch | ||
Kenichiro Suzuki, Tokyo (Japan) | ||
Assigned to NEC Corporation, Tokyo (Japan) | ||
Filed on Dec. 14, 2004, as Appl. No. 11/11,914. | ||
Claims priority of application No. 2003-416693 (JP), filed on Dec. 15, 2003. | ||
Prior Publication US 2005/0128026 A1, Jun. 16, 2005 | ||
Int. Cl. H01P 1/10 (2006.01); H01P 5/12 (2006.01) |
U.S. Cl. 333—104 [333/101] | 5 Claims |
1. A RF switch for changing a signal passing through a waveguide with a variable device switchable between the first state
in which the variable device has a high resistance and the second state in which the variable device has a low resistance,
depending on the direction in which current flows through the variable device, said RF switch comprising:
a high-frequency transmission circuit including said waveguide and at least one variable device;
a driver circuit including at least one variable device; and
a signal circuit for changing current supplied to the variable devices of said high-frequency transmission circuit, and said
driver circuit to switch between the first and second states of said variable devices;
said drive circuit and said high-frequency transmission circuit being electrically connected to each other at a junction,
said variable devices being disposed such that the variable device of said high-frequency transmission circuit and the variable
device of said driver circuit are in different states as viewed from said junction, wherein the resistance of each of said
variable devices is variable in a range from 1 Ω to 1 kΩ.
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