US 7,320,943 B2 | ||
Capacitor with hafnium, lanthanum and oxygen mixed dielectric and method for fabricating the same | ||
Kee-Jeung Lee, Ichon-shi (Korea, Republic of) | ||
Assigned to Hynix Semiconductor Inc., (Korea, Republic of) | ||
Filed on Jun. 30, 2004, as Appl. No. 10/883,322. | ||
Claims priority of application No. 10-2003-0098534 (KR), filed on Dec. 29, 2003. | ||
Prior Publication US 2005/0139965 A1, Jun. 30, 2005 | ||
Int. Cl. H01L 21/31 (2006.01); H01L 21/469 (2006.01) |
U.S. Cl. 438—778 [438/785; 257/E21.193; 257/E21.279; 257/E21.29; 257/E21.648; 257/E21.28] | 25 Claims |
1. A method for fabricating a capacitor, comprising:
forming at least one bottom electrode;
depositing an amorphous Hf1-xLaxO layer on the bottom electrode wherein x is between 0.03 and 0.1;
performing a thermal process for crystallizing the Hf1-xLaxO layer and removing impurities existed therein; and
forming a top electrode on the crystallized Hf1-xLaxO layer.
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