US 7,321,509 B2 | ||
Compensating for coupling in non-volatile storage | ||
Jian Chen, San Jose, Calif. (US); Raul-Adrian Cernea, Santa Clara, Calif. (US); and Gertjan Hemink, Yokohama (Japan) | ||
Assigned to Sandisk Corporation, Milpitas, Calif. (US) | ||
Filed on Feb. 16, 2007, as Appl. No. 11/675,632. | ||
Application 11/675632 is a division of application No. 11/099239, filed on Apr. 05, 2005, granted, now 7,196,946. | ||
Prior Publication US 2007/0140006 A1, Jun. 21, 2007 | ||
Int. Cl. G11C 11/34 (2006.01) |
U.S. Cl. 365—185.03 [365/185.2] | 19 Claims |
1. A non-volatile memory system, comprising:
a first set of non-volatile storage elements capable of storing data for at least a first grouping and a second grouping;
a second set of non-volatile storage elements adjacent to said first set of non-volatile storage elements, said second set
of non-volatile storage elements associated with at least four data states; and
one or more managing circuits in communication with said set of non-volatile storage elements, said one or more managing circuits
determine charge level data for said second set of non-volatile storage elements, said one or more managing circuits perform
multiple read operations using different reference levels distinguishing between two adjacent data states, each of said first
set of non-volatile storage elements choose to record information associated with one of said read operations based on charge
level data for a respective adjacent non-volatile storage element of said second set of multi-state non-volatile storage elements,
said recorded information indicates data values for said first grouping.
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