US 7,320,896 B2 | ||
Infrared radiation detector | ||
Paolo Fiorini, Brussels (Belgium); Sherif Sedky, Dokki Giza (Egypt); Matty Caymax, Leuven (Belgium); and Christiaan Baert, Heverlee (Belgium) | ||
Assigned to Interuniversitair Microelektronica Centrum (IMEC), Leuven (Belgium) | ||
Filed on May 05, 2006, as Appl. No. 11/418,973. | ||
Application 10/921012 is a division of application No. 09/861334, filed on May 18, 2001, granted, now 6,884,636. | ||
Application 11/418973 is a continuation of application No. 10/921012, filed on Aug. 17, 2004, granted, now 7,075,081. | ||
Application 09/861334 is a continuation of application No. 09/702501, filed on Oct. 31, 2000, granted, now 6,274,462. | ||
Application 09/702501 is a continuation of application No. 09/049797, filed on Mar. 27, 1998, granted, now 6,194,722. | ||
Claims priority of application No. 97870044 (EP), filed on Mar. 28, 1997. | ||
Prior Publication US 2006/0289764 A1, Dec. 28, 2006 | ||
Int. Cl. H01L 21/00 (2006.01) |
U.S. Cl. 438—14 [438/149; 250/338.1] | 21 Claims |
1. An electronic device comprising:
a substrate;
a transistor included in the substrate; and
a silicon-germanium (Si—Ge) structural layer coupled with the transistor, wherein the structural layer:
(i) has a stress in a predetermined range, the predetermined range for the stress being selected prior to deposition of the
structural layer; and
(ii) is deposited on the substrate subsequent to formation of the transistor such that deposition of the structural layer
does not substantially adversely affect the operation of the transistor.
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