US 7,321,130 B2 | ||
Thin film fuse phase change RAM and manufacturing method | ||
Hsiang Lan Lung, Elmsford, N.Y. (US); and Shih-Hung Chen, Elmsford, N.Y. (US) | ||
Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan) | ||
Filed on Jun. 17, 2005, as Appl. No. 11/155,067. | ||
Prior Publication US 2006/0284279 A1, Dec. 21, 2006 | ||
Int. Cl. H01L 47/00 (2006.01); G11C 11/00 (2006.01) |
U.S. Cl. 257—4 [257/529; 365/163] | 17 Claims |
1. A memory device, comprising:
a first electrode having a top side;
a second electrode having a top side;
an insulating member between the first electrode and the second electrode, the insulating member having a thickness between
the first and second electrodes near the top side of the first electrode and the top side of the second electrode; and
a bridge across the insulating member, the bridge having a first side and a second side and contacting the top sides of first
and second electrodes on the first side, and defining an inter-electrode path between the first and second electrodes across
the insulating member, the inter-electrode path having a path length defined by the width of the insulating member, wherein
the bridge comprises memory material having at least two solid phases, wherein the first and second electrodes and insulating
member comprise elements in a single layer of materials, and the bridge includes a top side and a bottom side and said first
side is the bottom side.
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