US 7,321,287 B2 | ||
Gas sensor | ||
Nobuhiro Ota, Itami (Japan); and Jin-Joo Park, Itami (Japan) | ||
Assigned to Sumitomo Electric Industries, Ltd., Osaka (Japan) | ||
Filed on May 08, 2006, as Appl. No. 11/429,322. | ||
Claims priority of application No. 2005-137587 (JP), filed on May 10, 2005; and application No. 2006-045274 (JP), filed on Feb. 22, 2006. | ||
Prior Publication US 2006/0255902 A1, Nov. 16, 2006 | ||
Int. Cl. H01C 3/04 (2006.01) |
U.S. Cl. 338—25 [338/28; 204/192 S; 204/406] | 2 Claims |
1. A gas sensor comprising:
a porous plate-like sintered body comprising trisilicon tetranitride needle crystals;
one first catalyst metal thin film comprising a first catalyst metal and one second catalyst metal thin film comprising a
second crystal metal, formed on one surface of the porous plate-like sintered body in the order from an introduction side
of a measurement gas in a state that the first catalyst metal thin film and the second catalyst metal thin film are non-contacted
with each other;
oxygen ion-conductive solid electrolyte thin films formed on the respective surface of the first catalyst metal thin film
and the second catalyst metal thin film;
a surface layer thin film comprising the first catalyst metal, formed on each surface of the respective ion-conductive solid
electrolyte thin films in a state that the first catalyst metal thin film and the second catalyst metal thin film are non-contacted
with each other, so that a first measurement part and a third measurement part are constituted; and
a glass sealing layer comprising silicon oxide, formed on other surface of the porous plate-like sintered body, a surface
other than the surface of the porous plate-like sintered body having the first catalyst metal thin film and the second catalyst
metal thin film formed thereon, and a side of the first measurement part and the third measurement part.
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