US 7,320,898 B2 | ||
Semiconductor laser device and method for fabricating the same | ||
Satoshi Tamura, Osaka (Japan); and Norio Ikedo, Osaka (Japan) | ||
Assigned to Matsushita Electric Industrial Co., Ltd., Osaka (Japan) | ||
Filed on Jun. 17, 2005, as Appl. No. 11/154,547. | ||
Claims priority of application No. 2004-179264 (JP), filed on Jun. 17, 2004. | ||
Prior Publication US 2005/0279993 A1, Dec. 22, 2005 | ||
Int. Cl. H01L 21/00 (2006.01); H01L 29/06 (2006.01) |
U.S. Cl. 438—22 [438/46; 257/12; 257/94] | 18 Claims |
1. A method for fabricating a semiconductor laser device, said method comprising the steps of:
successively forming an active layer, a first semiconductor layer made of a nitride semiconductor of a first conductivity
type and a multilayer film made of a plurality of thin films containing a nitride semiconductor of a second conductivity type,
the uppermost one of said thin films being gallium nitride;
forming a groove by selectively removing a part of the multilayer film; and
forming a second semiconductor layer made of the nitride semiconductor of the first conductivity type on the multilayer film
formed with the groove.
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