US 7,320,915 B2 | ||
Method of manufacturing flash memory device | ||
Seok Kiu Lee, Seongnam-si (Korea, Republic of) | ||
Assigned to Hynix Semiconductor Inc., Kyoungki-do (Korea, Republic of) | ||
Filed on May 27, 2005, as Appl. No. 11/139,059. | ||
Claims priority of application No. 10-2004-0114226 (KR), filed on Dec. 28, 2004. | ||
Prior Publication US 2006/0141718 A1, Jun. 29, 2006 | ||
Int. Cl. H01L 21/336 (2006.01) |
U.S. Cl. 438—265 [438/595; 257/E21.209] | 11 Claims |
1. A method of manufacturing a flash memory device, comprising the steps of:
forming a gate line having a structure in which a tunnel oxide film, a first polysilicon layer, a dielectric film, a second
polysilicon layer and a hard mask are stacked on a semiconductor substrate;
compensating for etch damages by oxidizing sidewalls of the gate line by means of an oxidization process;
forming an insulating film up to the height of the hard mask;
removing the hard mask to form a damascene pattern on the second polysilicon layer; and
forming a metal layer on the second polysilicon layer of the damascene pattern,
wherein after the oxidization process is performed, the metal layer is formed, thereby preventing generation of abnormal oxidization
in the metal layer.
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