US 7,321,183 B2 | ||
Film bulk acoustic resonator and method for manufacturing the same | ||
Yasuo Ebuchi, Kanagawa (Japan); Takako Motai, Kanagawa (Japan); and Kenya Sano, Kanagawa (Japan) | ||
Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
Filed on Jul. 15, 2004, as Appl. No. 10/890,989. | ||
Claims priority of application No. 2003-431235 (JP), filed on Dec. 25, 2003. | ||
Prior Publication US 2005/0142888 A1, Jun. 30, 2005 | ||
Int. Cl. H01L 41/053 (2006.01); H01L 41/083 (2006.01) |
U.S. Cl. 310—324 [310/327; 310/348] | 10 Claims |
1. A film bulk acoustic resonator, comprising:
a first insulator pattern;
a second insulator pattern disposed apart from the first insulator pattern;
a third insulator pattern disposed in an opposite direction to the second insulator pattern in relation to the first insulating
pattern and apart from the first insulating pattern;
a fourth insulator pattern disposed in an opposite direction to the first insulator pattern in relation to the second insulating
pattern and apart from the second insulator pattern;
a bottom conductive layer disposed above the first and third insulator patterns, spreading from a region between the first
and second insulator patterns to the third insulator pattern;
a piezoelectric film on the bottom conductive layer, disposed above the region between the first and second insulating patterns;
and
a top conductive layer facing the bottom conductive layer to sandwich the piezoelectric film, the top conductive layer spreading
from the region between the first and second insulator patterns to the fourth insulator pattern.
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