US 7,321,287 B2
Gas sensor
Nobuhiro Ota, Itami (Japan); and Jin-Joo Park, Itami (Japan)
Assigned to Sumitomo Electric Industries, Ltd., Osaka (Japan)
Filed on May 08, 2006, as Appl. No. 11/429,322.
Claims priority of application No. 2005-137587 (JP), filed on May 10, 2005; and application No. 2006-045274 (JP), filed on Feb. 22, 2006.
Prior Publication US 2006/0255902 A1, Nov. 16, 2006
Int. Cl. H01C 3/04 (2006.01)
U.S. Cl. 338—25  [338/28; 204/192 S; 204/406] 2 Claims
OG exemplary drawing
 
1. A gas sensor comprising:
a porous plate-like sintered body comprising trisilicon tetranitride needle crystals;
one first catalyst metal thin film comprising a first catalyst metal and one second catalyst metal thin film comprising a second crystal metal, formed on one surface of the porous plate-like sintered body in the order from an introduction side of a measurement gas in a state that the first catalyst metal thin film and the second catalyst metal thin film are non-contacted with each other;
oxygen ion-conductive solid electrolyte thin films formed on the respective surface of the first catalyst metal thin film and the second catalyst metal thin film;
a surface layer thin film comprising the first catalyst metal, formed on each surface of the respective ion-conductive solid electrolyte thin films in a state that the first catalyst metal thin film and the second catalyst metal thin film are non-contacted with each other, so that a first measurement part and a third measurement part are constituted; and
a glass sealing layer comprising silicon oxide, formed on other surface of the porous plate-like sintered body, a surface other than the surface of the porous plate-like sintered body having the first catalyst metal thin film and the second catalyst metal thin film formed thereon, and a side of the first measurement part and the third measurement part.