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US 7,321,143 B2 |
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Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor |
Christian Kunath, Dresden (Germany); and Eberhard Kurth, Moritzburg (Germany) |
Assigned to Fraunhofer-Gesellschaft zur Forderun der Angewandten Forschung E.V., Munich (Germany) |
Filed on Aug. 24, 2005, as Appl. No. 11/210,420. |
Application 11/210420 is a continuation of application No. PCT/EP03/02359, filed on Mar. 07, 2003. |
Prior Publication US 2006/0035420 A1, Feb. 16, 2006 |
Int. Cl. H01L 29/76 (2006.01)
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