US 7,320,908 B2 | ||
Methods of forming semiconductor devices having buried oxide patterns | ||
Yong-Hoon Son, Gyeonggi-do (Korea, Republic of); Si-Young Choi, Gyeonggi-do (Korea, Republic of); Byeong-Chan Lee, Gyeonggi-do (Korea, Republic of); Jong-Wook Lee, Gyeonggi-do (Korea, Republic of); In-Soo Jung, Gyeonggi-do (Korea, Republic of); and Deok-Hyung Lee, Gyeonggi-do (Korea, Republic of) | ||
Assigned to Samsung Electronics Co., Ltd., (Korea, Republic of) | ||
Filed on Mar. 04, 2005, as Appl. No. 11/72,103. | ||
Claims priority of application No. 10-2004-0015085 (KR), filed on Mar. 05, 2004. | ||
Prior Publication US 2005/0250279 A1, Nov. 10, 2005 | ||
Int. Cl. H01L 21/338 (2006.01) |
U.S. Cl. 438—175 [438/700; 438/225] | 14 Claims |
1. A method of forming a semiconductor device, comprising:
etching a semiconductor substrate such that the semiconductor substrate defines a trench and a preliminary active pattern,
the trench having a floor and a sidewall;
forming an insulating layer on the floor and the sidewall of the trench;
forming a spacer on the insulating layer such that the spacer is on the sidewall of the trench and on a portion of the floor
of the trench;
removing the insulating layer on the floor of the trench and beneath the spacer such that a portion of the floor of the trench
is at least partially exposed, the spacer is spaced apart from the floor of the trench and a portion of the preliminary active
pattern is partially exposed;
partially removing a portion of the exposed portion of the preliminary active pattern to provide an active pattern that defines
a recessed portion beneath the spacer; and
forming a buried insulating layer in the recessed portion of the active pattern.
|