US 7,320,944 B1 | ||
Deposition of phosphosilicate glass film | ||
Michal Efrati Fastow, Cupertino, Calif. (US); and Ryan Holler, Eagan, Minn. (US) | ||
Assigned to Cypress Semiconductor Corporation, San Jose, Calif. (US) | ||
Filed on Jun. 27, 2005, as Appl. No. 11/169,172. | ||
Claims priority of provisional application 60/582991, filed on Jun. 25, 2004. | ||
Int. Cl. H01L 21/469 (2006.01); H01L 21/31 (2006.01) |
U.S. Cl. 438—787 [438/783; 438/786; 257/E21.275] | 19 Claims |
1. A method of forming a phosphosilicate glass, comprising:
flowing a pre-deposition gas comprising helium and oxygen into a deposition chamber containing a substrate, wherein the temperature
of the substrate is at a pre-deposition temperature of at least 400° C.;
continuously increasing the temperature of the substrate to a deposition temperature and simultaneously continuously increasing
a flow rate of phosphine and silane until a phosphine:silane deposition ratio is achieved; and
depositing the phosphosilicate glass on the substrate at the deposition temperature and at the phosphine:silane deposition
ratio;
wherein a ratio of flow rates of helium:oxygen is 8-11:1.
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