US 7,320,732 B2
Method for preparing atomistically straight boundary junctions in high temperature superconducting oxides
Siu-Wai Chan, Demarest, N.J. (US)
Assigned to The Trustees of Columbia University in the City of New York, New York, N.Y. (US)
Filed on Jul. 27, 2005, as Appl. No. 11/190,699.
Application 11/190699 is a continuation of application No. PCT/US03/02833, filed on Jan. 31, 2003.
Prior Publication US 2007/0020894 A1, Jan. 25, 2007
Int. Cl. H01L 21/20 (2006.01)
U.S. Cl. 117—101  [117/43; 117/89; 438/481; 257/31; 257/E39.014] 12 Claims
OG exemplary drawing
 
1. A method of forming an atomistically straight grain boundary in a bicrystal epitaxial film formed on a surface of a substrate, comprising the steps of:
(a) preparing a bicrystal substrate having a straight grain boundary as a template, wherein the misorientation angle of a first and a second crystal of the bicrystal substrate is equal to:
arctan k1/h1+arctan k2/h2, where h1 and k1 are the Miller indices of a first grain of the bicrystal substrate and h2 and k2 are the Miller indices of a second grain of the bicrystal substrate; and
(b) depositing the film on the substrate using a layer-by-layer growth mode so that the boundary between the grains of the film is atomistically straight.