US 12,170,274 B2
Semiconductor packages and methods of forming same
Shin-Puu Jeng, Hsinchu (TW); Techi Wong, Zhubei (TW); Po-Yao Chuang, Hsinchu (TW); Shuo-Mao Chen, New Taipei (TW); and Meng-Wei Chou, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 22, 2022, as Appl. No. 17/701,083.
Application 17/701,083 is a continuation of application No. 16/901,682, filed on Jun. 15, 2020, granted, now 11,296,065.
Prior Publication US 2022/0216192 A1, Jul. 7, 2022
Int. Cl. H01L 25/18 (2023.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01); H01L 27/01 (2006.01); H01L 49/02 (2006.01)
CPC H01L 25/18 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/561 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/3142 (2013.01); H01L 23/49816 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 25/0657 (2013.01); H01L 27/01 (2013.01); H01L 28/90 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06572 (2013.01); H01L 2924/19011 (2013.01); H01L 2924/19041 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first package component comprising:
attaching a first semiconductor device over a first carrier substrate, the first semiconductor device comprising a first plurality of passive elements;
forming a first electrical connector over the first carrier substrate;
encapsulating the first semiconductor device and the first electrical connector with a first encapsulant;
forming a first redistribution structure over the first semiconductor device, the first electrical connector, and the first encapsulant, the first redistribution structure comprising a plurality of dielectric layers with metallization patterns therein;
bonding a second semiconductor device to the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements, the second semiconductor device and the first semiconductor device being bonded to opposite sides of the first redistribution structure;
forming a second electrical connector over the first redistribution structure;
encapsulating the second semiconductor device and the second electrical connector with a second encapsulant; and
forming a second package component comprising:
attaching a third semiconductor device to a second carrier substrate, the third semiconductor device comprising a third plurality of passive elements;
forming a third electrical connector over the second carrier substrate; and
encapsulating the third semiconductor device and the third electrical connector with a third encapsulant;
forming a second redistribution structure over the third semiconductor device, the second electrical connector, and the third encapsulant, the second redistribution structure comprising a plurality of dielectric layers with metallization patterns therein;
bonding a fourth semiconductor device to the second redistribution structure, the fourth semiconductor device comprising a fourth plurality of passive elements, the fourth semiconductor device and the third semiconductor device being bonded to opposite sides of the second redistribution structure; and
bonding the first package component to the second package component with a first set of conductive connectors, at least one of the first set of conductive connectors electrically contacting the first electrical connector and the second electrical connector.