US 12,171,120 B2
Organic light emitting display apparatus and method of manufacturing the same
Dongsoo Kim, Seoul (KR); and Ji-Hyun Ka, Asan-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed on May 23, 2023, as Appl. No. 18/322,560.
Application 18/322,560 is a continuation of application No. 17/235,058, filed on Apr. 20, 2021, granted, now 11,690,259.
Application 17/235,058 is a continuation of application No. 16/898,780, filed on Jun. 11, 2020, granted, now 10,985,230, issued on Apr. 20, 2021.
Application 16/898,780 is a continuation of application No. 16/299,522, filed on Mar. 12, 2019, granted, now 10,707,287, issued on Jul. 7, 2020.
Application 16/299,522 is a continuation of application No. 15/941,767, filed on Mar. 30, 2018, granted, now 10,229,962, issued on Mar. 12, 2019.
Application 15/941,767 is a continuation of application No. 15/583,698, filed on May 1, 2017, granted, now 9,954,047, issued on Apr. 24, 2018.
Claims priority of application No. 10-2016-0054176 (KR), filed on May 2, 2016.
Prior Publication US 2023/0301145 A1, Sep. 21, 2023
Int. Cl. H10K 59/126 (2023.01); G09G 3/3233 (2016.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/131 (2023.01)
CPC H10K 59/126 (2023.02) [G09G 3/3233 (2013.01); H10K 59/1213 (2023.02); H10K 59/131 (2023.02); G09G 2310/0262 (2013.01); G09G 2320/045 (2013.01); H01L 27/1225 (2013.01); H01L 29/78672 (2013.01); H01L 29/7869 (2013.01); H10K 59/1201 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A display device, comprising:
a substrate;
a plurality of pixels on the substrate, each of the plurality of pixels comprising:
a first transistor comprising a first control electrode and a first semiconductor active layer, the first control electrode of the first transistor being connected to a first scan line;
a second transistor comprising a second control electrode and a second semiconductor active layer, and being coupled to the first transistor; and
a shielding electrode configured to receive a power voltage;
wherein at least one of the first semiconductor active layer and the second semiconductor active layer is an oxide semiconductor layer, and
wherein the first semiconductor active layer and the second semiconductor active layer overlap the shielding electrode.