CPC H01L 27/14629 (2013.01) [H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/1463 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14649 (2013.01); H01L 27/14685 (2013.01); H01L 27/14687 (2013.01)] | 20 Claims |
1. An image sensor comprising:
a semiconductor substrate having a first side and a second side, wherein a plurality of photodetectors is arranged in the semiconductor substrate between the first side and the second side; and
a grating structure extending from the second side of the semiconductor substrate into a photodetector of the plurality of photodetectors, wherein the grating structure includes one or more first wall features extending along a first direction with respect to a top view and one or more second wall features extending along a second direction perpendicular to the first direction with respect to the top view; and
wherein the one or more first wall features directly contact a doped region of the photodetector.
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