US 12,170,185 B2
Vacuum deposition into trenches and vias and etch of trenches and via
George Xinsheng Guo, Palo Alto, CA (US)
Assigned to Ascentool, Inc., Palo Alto, CA (US)
Filed by Ascentool, Inc., Palo Alto, CA (US)
Filed on Jul. 8, 2023, as Appl. No. 18/349,140.
Application 18/349,140 is a continuation in part of application No. 18/346,967, filed on Jul. 5, 2023.
Claims priority of provisional application 63/368,231, filed on Jul. 12, 2022.
Prior Publication US 2024/0021411 A1, Jan. 18, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/32 (2006.01); C23C 14/35 (2006.01); C23C 16/50 (2006.01)
CPC H01J 37/32394 (2013.01) [C23C 14/35 (2013.01); C23C 16/50 (2013.01); H01J 37/32339 (2013.01); H01J 37/32541 (2013.01); H01J 37/32697 (2013.01); H01J 2237/332 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A plasma deposition apparatus, comprising:
a first plasma source configured to produce a first plasma confined in a magnetic field, comprising:
a gas distribution device configured to supply a gas;
a closed-loop electrode defining a center region therein and a central axis through the central region; and
one or more magnets that are outside an inner surface of the closed-loop electrode, wherein the one or more magnets are configured to produce the magnetic field in the center region,
wherein the closed-loop electrode and the one or more magnets are configured to produce the first plasma of activated atoms, molecules, electrons, and ions from the gas; and
a collimator configured to collimate the activated atoms, molecules, electrons, and ions produced by the first plasma source and to direct the ions to a substrate, wherein the collimator comprises:
parallel ribbons; and
a transport mechanism configured to move the parallel ribbons to expose clean portions of the parallel ribbons to deposition.