CPC H01L 21/02043 (2013.01) [B08B 1/12 (2024.01); B08B 1/32 (2024.01); B08B 3/04 (2013.01); H01L 21/30625 (2013.01); H01L 21/67028 (2013.01); H01L 21/67046 (2013.01); H01L 21/67092 (2013.01); H01L 21/687 (2013.01); H01L 21/02065 (2013.01); H01L 21/02074 (2013.01)] | 20 Claims |
1. A method comprising:
performing a chemical mechanical polish (CMP) cleaning on a wafer using a first brush, the first brush having a first axis parallel to a first surface of the wafer, wherein the first brush rotates around a first rotation axis;
performing the CMP cleaning on the wafer using a second brush, the second brush having a second axis parallel to the first surface of the wafer, wherein the second brush rotates around a second rotation axis; and
performing the CMP cleaning on the wafer using a third brush, the third brush having a third axis parallel to the first surface of the wafer, wherein the third brush rotates around a third rotation axis offset from the first rotation axis and the second rotation axis, wherein the first brush, the second brush, and the third brush are disposed on the first surface of the wafer.
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11. A method for polishing comprising:
rotating a first brush around a first axis over a wafer holding chuck in a first direction;
rotating a second brush around a second axis over the wafer holding chuck in the first direction, wherein the second axis is perpendicular to the first axis, wherein the first brush and the second brush are disposed in a first plane perpendicular to the first direction; and
rotating a third brush around a third axis over the wafer holding chuck in the first direction, wherein the third brush is disposed in the first plane.
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