CPC H01L 23/53276 (2013.01) [H01L 23/5226 (2013.01); H01L 23/5283 (2013.01)] | 20 Claims |
1. An interconnection structure, the structure comprising:
a first BEOL (Back-End-Of-Line) level;
a first MLG (Multi-Layer Graphene) layer;
a first isolation layer,
wherein said first BEOL level comprises said first MLG layer and said first isolation layer,
wherein said first MLG layer comprises at least one first line structure of MLG material,
wherein said first isolation layer comprises an electrically isolating material,
wherein said first isolation layer is disposed above and beside said at least one first line structure of MLG material;
a second BEOL level;
a second MLG layer;
a connection path;
at least one via,
wherein said second BEOL level comprises said second MLG layer,
wherein said second MLG layer is disposed above said first isolation layer,
wherein said second MLG layer comprises MLG material,
wherein said connection path electrically connects said first MLG layer to said second MLG layer,
wherein said connection path comprises one of said at least one via,
wherein a width of said at least one first line structure of MLG material is greater than a diameter of said one of said at least one via, and
wherein said first MLG layer and said second MLG layer are intercalation doped (n-type or p-type); and
a second isolation layer disposed below said at least one first line structure of MLG material,
wherein said at least one via is partially etched into said second isolation layer.
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