CPC H01L 29/42368 (2013.01) [H01L 21/28194 (2013.01); H01L 21/823431 (2013.01); H01L 21/823462 (2013.01); H01L 21/823821 (2013.01); H01L 21/823857 (2013.01); H01L 27/0924 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/7856 (2013.01); H01L 29/513 (2013.01)] | 20 Claims |
1. A method comprising:
forming a fin extending from a substrate;
forming a sacrificial layer along a top surface and sidewalls of the fin;
removing the sacrificial layer to form an opening, the opening exposing the fin; and
forming a gate dielectric layer along the top surface and the sidewalls of the fin, wherein a first thickness of the gate dielectric layer along the top surface of the fin is greater than a second thickness of the gate dielectric layer along the sidewalls of the fin, and wherein forming the gate dielectric layer comprises:
implementing a cycle of:
performing a conformal deposition process on the top surface and the sidewalls of the fin; and
after the conformal deposition process, performing a non-conformal deposition process on the top surface and the sidewalls of the fin; and
repeating the cycle one or more times.
|