CPC H01L 29/42392 (2013.01) [H01L 29/0665 (2013.01); H01L 29/66742 (2013.01); H01L 29/786 (2013.01)] | 20 Claims |
1. A nanosheet transistor device comprising:
a lower nanosheet transistor having a first nanosheet width;
an upper tri-gate nanosheet transistor on an upper surface of the lower nanosheet transistor and having a second nanosheet width that is narrower than the first nanosheet width; and
an insulation region that comprises oxygen and is on the upper surface of the lower nanosheet transistor and a sidewall of the upper tri-gate nanosheet transistor.
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