CPC H01F 27/323 (2013.01) [H01F 27/022 (2013.01); H01F 27/2804 (2013.01); H01F 41/043 (2013.01); H01L 23/49575 (2013.01); H01L 23/5227 (2013.01); H01L 23/58 (2013.01); H01L 25/50 (2013.01); H01F 2027/2809 (2013.01); H01L 23/49555 (2013.01); H01L 25/18 (2013.01)] | 17 Claims |
1. An electronic device, comprising:
a package structure; and
a magnetic assembly in the package structure, the magnetic assembly including a multilevel lamination or metallization structure having a core dielectric layer, dielectric stack layers, a high permittivity dielectric layer, and conductive features;
the core dielectric layer and the dielectric stack layers extending in respective planes of orthogonal first and second directions and stacked along a third direction that is orthogonal to the first and second directions, and the dielectric stack layers having a first relative permittivity;
the conductive features formed in metal layers on or between respective ones or pairs of the dielectric stack layers, and the conductive features including first and second patterned conductive features; and
the high permittivity dielectric layer extending between and contacting the first patterned conductive feature and one of the dielectric stack layers or the core dielectric layer, the high permittivity dielectric layer having a second relative permittivity, and the second relative permittivity being at least 1.5 times the first relative permittivity.
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