CPC H01L 23/5226 (2013.01) [H01L 21/76879 (2013.01); H01L 23/53228 (2013.01); H05K 1/115 (2013.01); H05K 3/14 (2013.01)] | 17 Claims |
1. An integrated circuit (IC) die package substrate comprising:
a first trace upon, or embedded within, a dielectric material, wherein the first trace comprises a first metal;
a first via coupled to the first trace, wherein the first via comprises the first metal;
a second trace upon, or embedded within, the dielectric material; and
a second via coupled to the second trace, wherein at least one of the second trace or the second via comprises a second metal with a different microstructure or composition than the first metal, wherein the second metal has a greater void % area than the first metal and wherein the second metal has a void % area of at least 0.1%.
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