US 12,170,342 B2
Optoelectronic semiconductor component having an intermediate layer and method for producing the optoelectronic semiconductor component
Mohammad Tollabi Mazraehno, Jena (DE)
Assigned to OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Appl. No. 17/413,393
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Dec. 18, 2019, PCT No. PCT/EP2019/085859
§ 371(c)(1), (2) Date Jun. 11, 2021,
PCT Pub. No. WO2020/127429, PCT Pub. Date Jun. 25, 2020.
Claims priority of application No. 102018133526.1 (DE), filed on Dec. 21, 2018.
Prior Publication US 2022/0029053 A1, Jan. 27, 2022
Int. Cl. H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/06 (2013.01) [H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01)] 13 Claims
OG exemplary drawing
 
1. An optoelectronic semiconductor component comprising:
a first semiconductor layer of an n-conductivity type, the first semiconductor layer being of AlxGa1-xN composition, with 0.3≤x≤0.95;
a second semiconductor layer of a p-conductivity type;
an active zone between the first semiconductor layer and the second semiconductor layer, the active zone comprising a quantum well structure; and
an intermediate layer between the first semiconductor layer and the active zone,
wherein the intermediate layer comprises a layer stack comprising first sub-layers of an Aly′Ga1-y′N composition (0≤y′≤1) having a layer thickness d′, and second sub-layers of an Aly″Ga1-y″N composition (0≤y″≤y′) having a layer thickness d″, alternately stacked one on top of another, and wherein x*1.05≤yavg≤1 and yavg=(y′*d′+y″*d″)/(d′+d″), and
wherein the intermediate layer is located directly adjacent to the active zone.