US 12,168,825 B2
Film formation method and film formation device
Michitaka Aita, Nirasaki (JP); Ken Itabashi, Nirasaki (JP); Ryota Ifuku, Nirasaki (JP); Takaaki Kato, Nirasaki (JP); and Kazuki Yamada, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Appl. No. 17/594,371
Filed by Tokyo Electron Limited, Tokyo (JP)
PCT Filed Apr. 6, 2020, PCT No. PCT/JP2020/015522
§ 371(c)(1), (2) Date Oct. 13, 2021,
PCT Pub. No. WO2020/213454, PCT Pub. Date Oct. 22, 2020.
Claims priority of application No. 2019-077890 (JP), filed on Apr. 16, 2019.
Prior Publication US 2022/0178031 A1, Jun. 9, 2022
Int. Cl. C23C 16/48 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01)
CPC C23C 16/482 (2013.01) [C23C 16/401 (2013.01); C23C 16/45553 (2013.01); C23C 16/45565 (2013.01); C23C 16/52 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A film formation method comprising:
adsorbing a precursor of a raw material gas onto a surface of a substrate on which a film is to be formed by irradiating an interior of a processing container with ultraviolet light having a first wavelength that separates a predetermined bond of the raw material gas while supplying the raw material gas into the processing container in which the substrate is disposed; and
forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container,
wherein, in the forming the layer, the reaction gas is supplied into the processing container while irradiating the interior of the processing container with ultraviolet light having a second wavelength that promotes the reaction between the precursor and the reaction gas, and
wherein the first wavelength is different from the second wavelength.