CPC H01L 21/0228 (2013.01) [H01L 21/02118 (2013.01); H01L 21/02181 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/0272 (2013.01); H01L 21/3105 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32 (2013.01); H01L 21/321 (2013.01); H01L 21/56 (2013.01); H01L 21/67069 (2013.01); H01L 21/7682 (2013.01); H01L 21/76829 (2013.01); H01L 21/76834 (2013.01); H01L 21/76877 (2013.01); H01L 23/3171 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01)] | 15 Claims |
1. A method of selective deposition on a second surface of a part relative to a first surface of the part, where the first and second surfaces have different compositions, the method comprising:
selectively forming a passivation layer comprising a polymer from vapor phase reactants on the first surface while leaving the second surface without the passivation layer, wherein the first surface comprises an inorganic dielectric and the second surface comprises metallic material, wherein the selectively forming comprises forming a passivation blocking layer on the second surface and subsequently selectively vapor depositing the passivation layer on the first surface relative to the passivation blocking layer, wherein the forming the passivation blocking layer comprises forming a self-assembled monolayer on the second surface, and wherein the forming the passivation blocking layer comprises contacting the second surface with a sulfur-containing monomer;
selectively depositing a structural layer from vapor phase reactants on the second surface relative to the passivation layer, and
selectively removing the passivation layer from the first surface after the selectively depositing the structural layer on the second surface without removing the structural layer, wherein the passivation layer is deposited directly on the first surface, and wherein material of the first surface on which the passivation layer is directly deposited remains after the selectively removing the passivation layer.
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8. A method of selective deposition on a second surface of a part relative to a first surface of the part, where the first and second surfaces have different compositions, the method comprising:
selectively forming a passivation layer comprising a polymer on the first surface relative to the second surface, wherein the selectively forming comprises alternately and sequentially exposing the first and second surfaces to first and second vapor phase reactants, wherein the selectively forming leaves the second surface without the passivation layer, wherein the selectively forming comprises forming a passivation blocking layer on the second surface and subsequently selectively vapor depositing the passivation layer on the first surface relative to the passivation blocking layer, wherein the forming the passivation blocking layer comprises forming a self-assembled monolayer on the second surface, and wherein the forming the passivation blocking layer comprises contacting the second surface with a sulfur-containing monomer;
selectively depositing a structural layer from vapor phase reactants on the second surface relative to the passivation layer; and
selectively removing the passivation layer from the first surface after the selectively depositing the structural layer on the second surface without removing the structural layer, wherein the passivation layer is deposited directly on the first surface, and wherein material of the first surface on which the passivation layer is directly deposited remains after the selectively removing the passivation layer.
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13. A method of selective deposition on a second surface of a part relative to a first surface of the part, where the first and second surfaces have different compositions, the method comprising:
selectively forming a passivation layer comprising a polymer from vapor phase reactants directly on the first surface without catalytic agents on the first surface while leaving the second surface without the passivation layer, wherein the selectively forming comprises forming a passivation blocking layer on the second surface and subsequently selectively vapor depositing the passivation layer on the first surface relative to the passivation blocking layer, wherein the forming the passivation blocking layer comprises forming a self-assembled monolayer on the second surface, and wherein the forming the passivation blocking layer comprises contacting the second surface with a sulfur-containing monomer;
selectively depositing a structural layer from vapor phase reactants on the second surface relative to the passivation layer; and
selectively removing the passivation layer from the first surface without removing the structural layer after selectively depositing the structural layer, wherein material of the first surface on which the passivation layer was directly deposited remains after selectively removing the passivation layer.
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