US 12,171,101 B2
Microelectronic devices including conductive structures
Daniel Billingsley, Meridian, ID (US); Matthew J. King, Boise, ID (US); Jordan D. Greenlee, Boise, ID (US); Yongjun J. Hu, Boise, ID (US); Tom George, Boise, ID (US); Amritesh Rai, Boise, ID (US); Sidhartha Gupta, Boise, ID (US); and Kyle A. Ritter, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 26, 2022, as Appl. No. 17/822,708.
Application 17/822,708 is a continuation of application No. 16/943,826, filed on Jul. 30, 2020, granted, now 11,527,546.
Prior Publication US 2022/0415917 A1, Dec. 29, 2022
Int. Cl. H10B 41/30 (2023.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01); H10B 43/30 (2023.01); H10B 43/40 (2023.01)
CPC H10B 43/40 (2023.02) [H01L 29/40114 (2019.08); H01L 29/40117 (2019.08); H01L 29/495 (2013.01); H10B 41/27 (2023.02); H10B 41/30 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a first stack structure comprising first tiers each comprising a level of a first conductive material and a level of a first insulative material vertically neighboring the level of the first conductive material;
a second stack structure vertically overlying the first stack structure and comprising second tiers each comprising a level of a second conductive material and a level of a second insulative material, the second conductive material exhibiting a larger average grain size than the first conductive material; and
strings of memory cells each individually comprising a channel material and a memory material vertically extending through the first stack structure, the memory material terminating in a dielectric material between the first stack structure and the second stack structure.