CPC H01L 27/14659 (2013.01) [G01T 1/24 (2013.01); H01L 27/14614 (2013.01); H04N 5/32 (2013.01); H04N 25/50 (2023.01)] | 14 Claims |
1. A flat panel detector, comprising: a base substrate, and a plurality of detection units located on the base substrate, wherein each of the detection units comprises a photodiode and a detection transistor; and
the flat panel detector further comprises: a compensation semiconductor material layer, wherein the compensation semiconductor material layer comprises a plurality of compensation structures mutually spaced, each detection transistor is correspondingly provided with a compensation structure, and the compensation structure is located between a gate and a gate insulating layer of the corresponding detection transistor; wherein the compensation structure surrounds the gate;
wherein a material of the gate comprises metal; and a material of the compensation semiconductor material layer comprises: a doped P-type semiconductor material;
wherein the gate is in direct contact with the compensation semiconductor material layer; a work function of the compensation semiconductor material layer is larger than a work function of the gate.
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