CPC H01L 27/088 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823481 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/78645 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. A semiconductor structure, comprising:
a first number of nanostructures stacked one over another over a first anti-punch-through (APT) feature;
a second number of nanostructures stacked one over another over a second APT feature;
a dummy epitaxial feature disposed between and in contact with the first APT feature and the second APT feature; and
a source/drain feature disposed over the dummy epitaxial feature and in contact with sidewalls of the first number of nanostructures and sidewalls of the second number of nanostructures.
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