CPC H01M 10/0585 (2013.01) [H01M 4/0402 (2013.01); H01M 4/0447 (2013.01); H01M 4/78 (2013.01); H01M 10/0525 (2013.01); H01M 10/0565 (2013.01); H01M 10/058 (2013.01); H01M 10/446 (2013.01); H01M 2004/021 (2013.01); H01M 2300/0082 (2013.01)] | 18 Claims |
1. A method of making an energy storage device comprising the steps of:
forming one or more trenches in a solid silicon substrate, the silicon substrate having a substrate top and a substrate bottom, the trenches being through the substrate top into the silicon substrate, each trench having a trench bottom, one or more trench sides, and a trench cavity defined by the trench bottom and trench sides with a trench opening area at the substrate top;
depositing region interface precursors on the trench bottom, wherein the region interface precursors include: a Lithium compound, a conductive adhesive, and a doping material;
depositing one or more anode materials in the trench cavity above the region interface precursors;
depositing one or more solid polymer electrolytes (SPE) on the anode materials; and
depositing one or more cathode materials on the SPE.
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