CPC H10B 10/12 (2023.02) | 20 Claims |
1. A method, comprising:
forming a first gate dielectric layer over an active region, the first gate dielectric layer containing a first type of material, wherein the first type of material has a first peak concentration level;
forming a second gate dielectric layer over the first gate dielectric layer, the second gate dielectric layer containing a second type of material different from the first type of material, wherein the second type of material has a second peak concentration level less than the first peak concentration level;
forming a third gate dielectric layer over the second gate dielectric layer, the third gate dielectric layer containing a third type of material different from the second type of material, wherein the third type of material has a third peak concentration level less than the second peak concentration level; and
forming a metal-containing gate electrode over the third gate dielectric layer.
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11. A method, comprising:
depositing a first gate dielectric layer directly on a surface of an interfacial layer, wherein the first gate dielectric layer has a first material composition and a first thickness;
depositing a second gate dielectric layer directly on a surface of the first gate dielectric layer, wherein the second gate dielectric layer has a second material composition different from the first material composition, and wherein the second gate dielectric layer has a second thickness different from the first thickness;
depositing a third gate dielectric layer directly on a surface of the second gate dielectric layer, wherein the third gate dielectric layer has a third material composition different from the second material composition and the first material composition, and wherein the third gate dielectric layer has a third thickness different from the second thickness and the first thickness; and
forming a metal-containing gate electrode directly on a surface of the third gate dielectric layer;
wherein the depositing the first gate dielectric layer, the depositing the second gate dielectric layer, and the depositing the third gate dielectric layer are performed such that a first peak concentration level of the first material composition is greater than a second peak concentration level of the second material composition, and the second peak concentration level of the second material composition is greater than a third peak concentration level of the third material composition.
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17. A method, comprising:
depositing a first gate dielectric layer over an upwardly protruding fin structure, wherein the first gate dielectric layer contains hafnium oxide;
depositing a second gate dielectric layer directly on an upwardly-facing upper surface and laterally-facing side surfaces of the first gate dielectric layer, wherein the second gate dielectric layer contains zirconium oxide;
depositing a third gate dielectric layer directly on an upwardly-facing upper surface and laterally-facing side surfaces of the second gate dielectric layer, wherein the third gate dielectric layer contains lanthanum oxide or aluminum oxide; and
depositing a metal-containing gate electrode directly on an upwardly-facing upper surface and laterally-facing side surfaces of the third gate dielectric layer.
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