US 12,170,115 B2
Write performance optimization for erase on demand
Meng Wei, Shanghai (CN)
Assigned to MICRON TECHNOLOGY, INC., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Oct. 19, 2021, as Appl. No. 17/451,479.
Claims priority of application No. PCT/CN2021/115333 (WO), filed on Aug. 30, 2021.
Prior Publication US 2023/0062995 A1, Mar. 2, 2023
Int. Cl. G11C 16/14 (2006.01); G06F 12/02 (2006.01); G11C 16/16 (2006.01); G11C 16/32 (2006.01)
CPC G11C 16/14 (2013.01) [G06F 12/0253 (2013.01); G11C 16/16 (2013.01); G11C 16/32 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
erasing a portion of memory from a garbage pool in response to detecting an idle period;
receiving a request to write data to the memory;
determining that a charge gain threshold has not been satisfied for the erased portion of memory; and
writing the data to the erased portion of memory in response to determining the charge gain threshold has not been satisfied.