CPC H01L 21/28088 (2013.01) [H01L 21/28556 (2013.01); H01L 21/32135 (2013.01); H01L 29/4966 (2013.01)] | 20 Claims |
1. A semiconductor structure, comprising:
a barrier layer comprising first and second sublayers, wherein a first metal element is disposed at an interface between the first and second sublayers;
a work function layer on the barrier layer and comprising a second metal element; and
a metal layer on the work function layer.
|