US 12,169,679 B2
Transmission gate structure
Shao-Lun Chien, Hsinchu (TW); Pin-Dai Sue, Hsinchu (TW); Li-Chun Tien, Hsinchu (TW); Ting-Wei Chiang, Hsinchu (TW); and Ting Yu Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 31, 2023, as Appl. No. 18/362,195.
Application 17/689,825 is a division of application No. 17/116,745, filed on Dec. 9, 2020, granted, now 11,295,055, issued on Apr. 5, 2022.
Application 18/362,195 is a continuation of application No. 17/689,825, filed on Mar. 8, 2022, granted, now 11,727,187.
Application 17/116,745 is a continuation of application No. 16/530,703, filed on Aug. 2, 2019, granted, now 10,867,113, issued on Dec. 15, 2020.
Claims priority of provisional application 62/727,903, filed on Sep. 6, 2018.
Prior Publication US 2023/0385519 A1, Nov. 30, 2023
Int. Cl. G06F 30/398 (2020.01); G03F 1/36 (2012.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01)
CPC G06F 30/398 (2020.01) [G03F 1/36 (2013.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A transmission gate structure comprising:
first and second PMOS transistors positioned in a first active area;
first and second NMOS transistors positioned in a second active area parallel to the first active area;
first through fourth metal segments parallel to the first and second active areas, wherein
the first metal segment overlies the first active area,
the fourth metal segment overlies the second active area, and
the second and third metal segments are a total of two metal segments positioned between the first and fourth metal segments;
a first conductive path between gates of the first PMOS and NMOS transistors;
a second conductive path between gates of the second PMOS and NMOS transistors; and
a third conductive path between a source/drain (S/D) terminal of each of the first and second PMOS transistors and each of the first and second NMOS transistors,
wherein the third conductive path comprises a first conductive segment extending across at least three of the first through fourth metal segments.