US 12,170,348 B2
Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
Michael J. Bernhardt, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 27, 2021, as Appl. No. 17/562,348.
Application 14/456,730 is a division of application No. 13/053,932, filed on Mar. 22, 2011, granted, now 8,802,461, issued on Aug. 12, 2014.
Application 17/562,348 is a continuation of application No. 16/862,897, filed on Apr. 30, 2020, granted, now 11,211,537.
Application 16/862,897 is a continuation of application No. 15/815,568, filed on Nov. 16, 2017, granted, now 10,644,211, issued on May 5, 2020.
Application 15/815,568 is a continuation of application No. 15/254,483, filed on Sep. 1, 2016, granted, now 9,842,976, issued on Dec. 12, 2017.
Application 15/254,483 is a continuation of application No. 14/456,730, filed on Aug. 11, 2014, granted, now 9,455,386, issued on Sep. 27, 2016.
Prior Publication US 2022/0123190 A1, Apr. 21, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/40 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/62 (2013.01) [H01L 33/0093 (2020.05); H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/007 (2013.01); H01L 33/0095 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0066 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A light emitting device, comprising:
a silicon substrate;
a nickel silicide layer disposed over and in direct contact with the silicon substrate;
a mirror layer disposed over the nickel silicide layer;
a first diffusion barrier layer disposed between the nickel silicide layer and the mirror layer, wherein the first diffusion barrier layer comprises an unconsumed portion of either a nickel layer or a nickel alloy layer from which the nickel silicide layer was at least partially formed;
a second diffusion barrier layer disposed over and in direct contact with the mirror layer; and
a light emitting structure disposed over the second diffusion barrier layer.