CPC H01L 29/7869 (2013.01) [H01L 21/02565 (2013.01); H01L 29/66969 (2013.01); H01L 29/78618 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. An oxide semiconductor transistor comprising:
a substrate;
first and second compound layers on the substrate;
a channel layer contacting the first and second compound layers;
a first electrode facing a portion of the channel layer;
a second electrode facing the first compound layer with the channel layer between the first compound layer and the second electrode; and
a third electrode facing the second compound layer with the channel layer between the second compound layer and the third electrode,
wherein, in the channel layer, an oxygen concentration of a region facing the first electrode is greater than that of remaining regions of the channel layer, and
the first and second compound layers include a metal having higher oxygen reactivity compared to an oxygen reactivity of the second and third electrodes.
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