CPC H01L 29/2003 (2013.01) [H01L 29/0653 (2013.01); H01L 29/41775 (2013.01); H01L 29/7786 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a first nitride semiconductor layer;
a second nitride semiconductor layer on the first nitride semiconductor layer and having a first region, a second region, a third region between the first region and the second region in a first direction that is parallel to a surface of the first nitride semiconductor layer, the second nitride semiconductor layer having a bandgap greater than that of the first nitride semiconductor layer;
a first gate electrode on the first region and extending in a second direction that is parallel to the surface of the first nitride semiconductor layer;
a first source electrode on the first region and extending in the second direction;
a second gate electrode on the second region and extending in the second direction;
a second source electrode on the second region and extending in the second direction;
a drain electrode electrically connected to a first wiring and a second wiring, the first wiring directly contacting the second nitride semiconductor layer in the first region, the second wiring directly contacting the second nitride semiconductor layer in the second region; and
an insulation material on the third region, wherein
the first wiring and the second wiring are separated from each other in the first direction, and
a portion of the drain electrode is above the first wiring, the second wiring, and the insulation material in a third direction orthogonal to the surface of the first nitride semiconductor layer such that the first and second wirings are between the portion of the drain electrode and the second nitride semiconductor layer in the third direction.
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