US 12,170,199 B2
Cyclic spin-on coating process for forming dielectric material
Je-Ming Kuo, Hsinchu (TW); Yen-Chun Huang, New Taipei (TW); Chih-Tang Peng, Zhubei (TW); and Tien-I Bao, Taoyuan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 31, 2023, as Appl. No. 18/362,136.
Application 18/362,136 is a continuation of application No. 17/813,968, filed on Jul. 21, 2022, granted, now 11,791,154.
Application 17/813,968 is a continuation of application No. 15/992,384, filed on May 30, 2018, granted, now 11,450,526, issued on Sep. 20, 2022.
Prior Publication US 2023/0411150 A1, Dec. 21, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); B05D 3/06 (2006.01); B05D 7/00 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); B05D 1/00 (2006.01); B05D 1/38 (2006.01); G03F 7/16 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/02282 (2013.01) [B05D 3/067 (2013.01); B05D 7/546 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/0223 (2013.01); H01L 21/02323 (2013.01); H01L 21/02348 (2013.01); H01L 21/31111 (2013.01); H01L 21/76224 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); B05D 1/005 (2013.01); B05D 1/38 (2013.01); G03F 7/162 (2013.01); H01L 21/02255 (2013.01); H01L 21/76825 (2013.01); H01L 21/76826 (2013.01); H01L 21/76828 (2013.01); H01L 21/76832 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of semiconductor processing, the method comprising:
spin-coating a first portion of a dielectric material on to a non-planar substrate;
curing the first portion of the dielectric material to decompose Si—N and Si—H bonds in the first portion of the dielectric material to form a first silicon nitride;
spin-coating a second portion of the dielectric material on the first portion of the dielectric material, wherein the second portion comprises a second silicon nitride; and
thermal annealing the dielectric material to form an annealed dielectric material on the substrate, wherein the thermal annealing the dielectric material converts the first silicon nitride and the second silicon nitride into a silicon oxide material and increases a thickness of the dielectric material.