US 12,170,206 B2
Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
Arito Ogawa, Toyama (JP); Norikazu Mizuno, Toyama (JP); Atsuhiko Ashitani, Toyama (JP); Atsuro Seino, Toyama (JP); and Kota Kowa, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Mar. 18, 2022, as Appl. No. 17/698,593.
Application 17/698,593 is a continuation of application No. PCT/JP2019/036675, filed on Sep. 19, 2019.
Prior Publication US 2022/0208557 A1, Jun. 30, 2022
Int. Cl. H01L 21/3213 (2006.01); C23F 1/12 (2006.01); H01L 21/285 (2006.01); H01L 21/306 (2006.01)
CPC H01L 21/32135 (2013.01) [C23F 1/12 (2013.01); H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/30604 (2013.01); H01L 21/30621 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
preparing the substrate having a metal nitride film formed on a surface thereof; and
slimming the metal nitride film by pulse-supplying a metal and halogen-containing gas to the metal nitride film without supplying oxygen-containing gas to the metal nitride film,
wherein the metal and the halogen-containing gas contain tungsten hexafluoride.