CPC H01J 37/1478 (2013.01) [H01J 37/20 (2013.01); H01J 37/3171 (2013.01); H01L 21/26506 (2013.01); H01J 2237/152 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/24564 (2013.01)] | 35 Claims |
1. A method for providing a ribbon beam to a wafer in an ion implantation system, the ion implantation system including an ion source, a wafer chuck configured to hold the wafer, a dipole magnet including at least two coils disposed between the ion source and the wafer chuck, and a controller configured to control the ion source, the wafer chuck, and the dipole magnet, the method comprising:
delivering the ribbon beam with the ion source to the wafer held in the wafer chuck; and
adjusting a ribbon beam angle of the ribbon beam with the dipole magnet at one or more locations along a path of the ribbon beam between the ion source and the wafer held in the wafer chuck by applying a first current to a first coil of the at least two coils and a second current to a second coil of the at least two coils, wherein the ribbon beam angle is an angle between a first beamlet and a second beamlet of the ribbon beam, wherein the first beamlet and the second beamlet are adjacent beamlets of the ribbon beam, and wherein a gap of the dipole magnet is determined based on at least one of an energy or a mass of the ribbon beam.
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