US 12,171,102 B2
Methods of manufacturing three-dimensional memory devices with conductive spacers
Sai-Hooi Yeong, Zhubei (TW); Chi On Chui, Hsinchu (TW); and Sheng-Chen Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 3, 2022, as Appl. No. 17/567,269.
Claims priority of provisional application 63/219,908, filed on Jul. 9, 2021.
Prior Publication US 2023/0008998 A1, Jan. 12, 2023
Int. Cl. H10B 51/20 (2023.01); G11C 5/06 (2006.01); G11C 11/22 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H10B 43/10 (2023.01); H10B 43/20 (2023.01); H10B 51/10 (2023.01); H10B 53/20 (2023.01)
CPC H10B 51/20 (2023.02) [G11C 5/063 (2013.01); G11C 11/223 (2013.01); H01L 29/40111 (2019.08); H01L 29/40117 (2019.08); H01L 29/6656 (2013.01); H10B 51/10 (2023.02); H10B 53/20 (2023.02); H10B 43/10 (2023.02); H10B 43/20 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a word line between a pair of dielectric layers, the word line formed of a first metal;
recessing a first sidewall of the word line from first sidewalls of the dielectric layers to form a first sidewall recess between the dielectric layers;
forming a first conductive spacer in the first sidewall recess and on the first sidewall of the word line, the first conductive spacer physically contacting the first sidewall of the word line, the first conductive spacer formed of a second metal, the second metal different from the first metal;
forming a memory film on a sidewall of the first conductive spacer and the first sidewalls of the dielectric layers;
forming a semiconductor film on a sidewall of the memory film; and
forming a bit line on a sidewall of the semiconductor film.