CPC H01L 29/7869 (2013.01) [H01L 21/28 (2013.01); H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H01L 29/04 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01)] | 6 Claims |
1. A semiconductor device comprising:
an oxide semiconductor film over a substrate;
a source electrode and a drain electrode, each in electrical contact with the oxide semiconductor film;
a gate insulating film over the oxide semiconductor film; and
a gate electrode over the gate insulating film,
wherein each of the source electrode and the drain electrode includes a first conductive layer, a second conductive layer over the first conductive layer, and a third conductive layer over the second conductive layer,
wherein the first conductive layer and the third conductive layer are in physical contact with each other over the oxide semiconductor film, and
wherein the second conductive layer of the source electrode and the second conductive layer of the drain electrode do not overlap a top surface of the oxide semiconductor film.
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