CPC H01L 25/18 (2013.01) [H01L 23/12 (2013.01); H01L 23/5286 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 24/08 (2013.01); H01L 25/0652 (2013.01); H01L 2224/08145 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06582 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/1437 (2013.01)] | 20 Claims |
1. A microelectronic assembly, comprising:
a base die having a front side and a back side, the back side being opposite the front side, the base die including transistors over the front side of the base die, and further including base die interconnects, wherein the base die interconnects include conductive vias extending between the front side and the back side of the base die;
a back side metallization stack over the back side of the base die, the back side metallization stack including conductive lines;
back side conductive contacts over the back side metallization stack, the back side conductive contacts coupled to the transistors via the back side metallization stack and the base die interconnects;
a front side metallization stack over the front side of the base die, the front side metallization stack including conductive interconnects coupled to the transistors,
wherein a pitch of the conductive interconnects is between about 10 microns and 25 microns, cross-sectional dimensions of the conductive interconnects are between about 7 microns and 11 microns, a pitch of the conductive vias is between about 2 microns and 12 microns, and cross-sectional dimensions of the conductive vias are between about 2 microns and 4 microns.
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