US 12,170,196 B2
Methods and systems for cleaning high aspect ratio structures
Schubert S. Chu, San Francisco, CA (US); and Errol Antonio C. Sanchez, Tracy, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jan. 26, 2023, as Appl. No. 18/160,232.
Application 18/160,232 is a continuation of application No. 17/025,669, filed on Sep. 18, 2020, granted, now 11,605,544.
Prior Publication US 2023/0170228 A1, Jun. 1, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/02049 (2013.01) [H01L 21/0206 (2013.01); H01L 21/02068 (2013.01); H01L 21/02658 (2013.01); H01L 21/31116 (2013.01); H01L 21/32135 (2013.01); H01L 21/67028 (2013.01); H01L 21/67069 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
positioning a substrate on a substrate support in a processing volume of a processing chamber;
flowing a first process gas into the processing volume, the first process gas comprising HF;
flowing a second process gas into the processing volume, the second process gas comprising a nitrogen-containing species; and
exposing the substrate to the first process gas and the second process gas while cooling the substrate to remove oxide from the substrate under oxide removal conditions, wherein exposing the substrate to the first process gas and the second process gas forms a (C5H5N)2SiF4 complex.