CPC G06F 30/398 (2020.01) [G03F 1/36 (2013.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01)] | 20 Claims |
1. A transmission gate structure comprising:
first and second PMOS transistors positioned in a first active area;
first and second NMOS transistors positioned in a second active area parallel to the first active area;
first through fourth metal segments parallel to the first and second active areas, wherein
the first metal segment overlies the first active area,
the fourth metal segment overlies the second active area, and
the second and third metal segments are a total of two metal segments positioned between the first and fourth metal segments;
a first conductive path between gates of the first PMOS and NMOS transistors;
a second conductive path between gates of the second PMOS and NMOS transistors; and
a third conductive path between a source/drain (S/D) terminal of each of the first and second PMOS transistors and each of the first and second NMOS transistors,
wherein the third conductive path comprises a first conductive segment extending across at least three of the first through fourth metal segments.
|