US 12,170,239 B2
Direct bonded copper substrates fabricated using silver sintering
Erik Nino Mercado Tolentino, Seremban (MY); Shutesh Krishnan, Seremban (MY); and Francis J. Carney, Mesa, AZ (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed on Sep. 19, 2023, as Appl. No. 18/469,615.
Application 18/469,615 is a division of application No. 16/744,378, filed on Jan. 16, 2020, granted, now 11,776,870.
Prior Publication US 2024/0006266 A1, Jan. 4, 2024
Int. Cl. H01L 23/373 (2006.01); B22F 7/06 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/473 (2006.01); H05K 7/20 (2006.01)
CPC H01L 23/3735 (2013.01) [B22F 7/064 (2013.01); H01L 21/4882 (2013.01); B22F 2301/10 (2013.01); H01L 23/473 (2013.01); H01L 24/09 (2013.01); H01L 24/29 (2013.01); H05K 7/209 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
disposing a sinter material layer on a side of a ceramic tile;
disposing an intermediate metal layer on a surface of the ceramic tile between the ceramic tile and the sinter material layer disposed on the side of the ceramic tile, the sinter material layer being made of metal particles, the intermediate metal layer being in direct contact with both the ceramic tile and the sinter material layer, the intermediate metal layer having a portion thereof inter diffused into the sinter material layer; and
sinter bonding a lead frame to the side of the ceramic tile with the sinter material layer.