US 12,170,327 B2
Semiconductor structure and manufacturing method of the same
Ming-Te Chen, Hsinchu (TW); Hui-Ting Tsai, Tainan (TW); Jun He, Hsinchu (TW); Kuo-Feng Yu, Hsinchu County (TW); and Chun Hsiung Tsai, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Aug. 10, 2021, as Appl. No. 17/398,668.
Claims priority of provisional application 63/168,746, filed on Mar. 31, 2021.
Prior Publication US 2022/0320319 A1, Oct. 6, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/66795 (2013.01) [H01L 21/02255 (2013.01); H01L 21/02595 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a FinFET structure, comprising:
providing a FinFET precursor comprising a plurality of fins and a plurality of gate trenches between the fins, the plurality of fins comprising a first fin and a second fin;
forming a first portion of a trench dummy of a dummy gate within the plurality of gate trenches;
removing at least a part of the first portion of the trench dummy;
forming a second portion of the trench dummy over the first portion of the trench dummy;
performing a first thermal treatment to the first and second portions of the trench dummy at a first temperature, wherein the second portion of the trench dummy has a substantially flat top surface continuously extending from the first fin to the second fin; and
forming a blanket dummy of the dummy gate over the substantially flat top surface of the second portion of the trench dummy at a second temperature lower than the first temperature.