CPC H01L 27/0207 (2013.01) [G06F 30/392 (2020.01); H01L 27/0924 (2013.01); H10B 10/12 (2023.02); G06F 2117/12 (2020.01)] | 3 Claims |
1. A layout design method comprising:
preparing an original layout, wherein the original layout comprises a first SRAM unit cell and a second SRAM unit cell;
searching for an original contact pattern which directly connects a first fin pattern of the first SRAM unit cell and a second fin pattern of the second SRAM unit cell;
generating a first contact pattern which directly contacts the first fin pattern and a second contact pattern which directly contacts the second fin pattern by cutting the original contact pattern;
generating a first target pattern and a second target pattern by reflecting etch skew in the first contact pattern and the second contact pattern; and
performing optical proximity correction (OPC) on the first target pattern and the second target pattern.
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