CPC H01L 29/36 (2013.01) [H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/7786 (2013.01)] | 20 Claims |
1. A nitride semiconductor, comprising:
a base body;
a nitride member; and
an intermediate region provided between the base body and the nitride member,
the nitride member including,
a first nitride region including Alx1Ga1-x1N (0<x1≤1), and
a second nitride region including Alx2Ga1-x2N (0≤x2<1, x2<x1),
the first nitride region being between the intermediate region and the second nitride region,
the intermediate region including nitrogen and carbon,
a concentration of carbon in the intermediate region being not less than 1.5×1019/cm3 and not more than 6×1020/cm3.
|