US 12,169,676 B2
PUF cell array, system and method of manufacturing same
Cheng-En Lee, Hsinchu (TW); and Shih-Lien Linus Lu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 31, 2023, as Appl. No. 18/362,912.
Application 18/362,912 is a continuation of application No. 17/816,104, filed on Jul. 29, 2022, granted, now 11,727,182.
Application 17/816,104 is a continuation of application No. 16/661,971, filed on Oct. 23, 2019, granted, now 11,461,525, issued on Oct. 4, 2022.
Claims priority of provisional application 62/753,281, filed on Oct. 31, 2018.
Prior Publication US 2023/0376669 A1, Nov. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 30/392 (2020.01); G06F 30/39 (2020.01); H01L 27/02 (2006.01); G06F 119/18 (2020.01)
CPC G06F 30/392 (2020.01) [G06F 30/39 (2020.01); H01L 27/0207 (2013.01); G06F 2119/18 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A physically unclonable function (PUF) cell array comprising:
a first PUF cell arranged in a first column in a first direction, the first PUF cell comprising:
a first set of conductive structures extending in at least the first direction or a second direction different from the first direction, the first set of conductive structures being on a first metal layer, and including a first conductive structure extending in at least the second direction and a second conductive structure extending in at least the first direction and being separated from the first conductive structure in the first direction;
a second PUF cell arranged in a second column in the first direction, the second PUF cell comprising:
a second set of conductive structures extending in at least the first direction or the second direction, being on the first metal layer and including a third conductive structure extending in at least the second direction and a fourth conductive structure extending in at least the first direction and being separated from the third conductive structure in the first direction; and
a first power rail overlapping a first boundary of the first PUF cell and the second PUF cell, the first power rail being configured to supply one of a supply voltage or a reference supply voltage to at least the first PUF cell or the second PUF cell, the first power rail extending in the second direction, and being on the first metal layer;
wherein at least the first conductive structure and the third conductive structure, or the second conductive structure and the fourth conductive structure are symmetric to each other with respect to a central line of at least the first PUF cell or the second PUF cell extending in the first direction.