CPC H01L 29/0653 (2013.01) [H01L 29/66553 (2013.01); H01L 29/66568 (2013.01); H01L 21/26513 (2013.01); H01L 21/30604 (2013.01); H01L 21/3065 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a high-k dielectric layer extending in a first direction disposed over a first region of a substrate;
a metal layer extending in the first direction disposed over the high-k dielectric layer;
a doped epitaxial layer disposed in a second region of the substrate on opposing sides of the metal layer along a second direction crossing the first direction;
an insulating layer disposed in the substrate outside the doped epitaxial layer at a first main surface of the substrate along the second direction;
an impurity containing region containing an impurity in an amount higher than the substrate disposed along a third direction relative to the doped epitaxial layer, wherein the third direction crosses the first and second directions,
wherein the insulating layer extends along the second direction between the doped epitaxial layer and the impurity containing region, and extends along the third direction into the substrate a further distance from the first main surface than the impurity containing region, and
a void is formed in the insulating layer between the doped epitaxial layer and the impurity containing region.
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