CPC H01L 29/41791 (2013.01) [H01L 21/3065 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] | 20 Claims |
1. A method of manufacturing a semiconductor device comprising:
depositing a metal layer over a semiconductor fin;
depositing a semiconductor layer over the metal layer;
oxidizing a first portion of the semiconductor layer forming an oxide layer over a second portion of the semiconductor layer;
performing a first plasma etch to remove the oxide layer from over the second portion of the semiconductor layer;
performing a second plasma etch to remove the second portion of the semiconductor layer, wherein performing the second plasma etch forms a by-product layer, wherein the by-product layer covers the metal layer; and
removing the by-product layer by a sublimation process.
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