CPC H01L 29/66795 (2013.01) [H01L 21/02255 (2013.01); H01L 21/02595 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01)] | 20 Claims |
1. A method for forming a FinFET structure, comprising:
providing a FinFET precursor comprising a plurality of fins and a plurality of gate trenches between the fins, the plurality of fins comprising a first fin and a second fin;
forming a first portion of a trench dummy of a dummy gate within the plurality of gate trenches;
removing at least a part of the first portion of the trench dummy;
forming a second portion of the trench dummy over the first portion of the trench dummy;
performing a first thermal treatment to the first and second portions of the trench dummy at a first temperature, wherein the second portion of the trench dummy has a substantially flat top surface continuously extending from the first fin to the second fin; and
forming a blanket dummy of the dummy gate over the substantially flat top surface of the second portion of the trench dummy at a second temperature lower than the first temperature.
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