US 12,168,603 B2
Monolithic post complementary metal-oxide-semiconductor integration of thermoelectric-based infrared detector
Wan Chia Ang, Singapore (SG); Piotr Kropelnicki, Singapore (SG); and Ilker Ender Ocak, Singapore (SG)
Assigned to Meridian Innovation Pte Ltd, Singapore (SG)
Appl. No. 17/440,784
Filed by Meridian Innovation Pte Ltd, Singapore (SG)
PCT Filed Apr. 1, 2020, PCT No. PCT/SG2020/050201
§ 371(c)(1), (2) Date Sep. 19, 2021,
PCT Pub. No. WO2020/204833, PCT Pub. Date Oct. 8, 2020.
Application 17/440,784 is a continuation in part of application No. 17/156,639, filed on Jan. 25, 2021.
Claims priority of provisional application 62/827,205, filed on Apr. 1, 2019.
Prior Publication US 2022/0185660 A1, Jun. 16, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. B81C 1/00 (2006.01); B81B 7/00 (2006.01); G01J 5/02 (2022.01); G01J 5/12 (2006.01)
CPC B81C 1/00246 (2013.01) [G01J 5/024 (2013.01); G01J 5/12 (2013.01); B81B 7/0006 (2013.01); B81B 2201/0207 (2013.01); B81C 2203/0714 (2013.01); B81C 2203/0742 (2013.01); G01J 2005/123 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a device comprising:
providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region with CMOS components
forming a BE dielectric over the CMOS components, wherein the BE dielectric comprises multiple interconnect and via levels with interconnects and via contacts for interconnecting the CMOS components;
forming a MEMS level on the BE dielectric, wherein the MEMS level comprises a MEMS region with a MEMS component, the MEMS component includes recrystallized polysilicon MEMS structures, wherein the MEMS level occupies a portion of the BE dielectric;
forming a substrate sealing ring on the BE dielectric surrounding the MEMS level;
providing a cap having a cap inner surface and a cap outer surface, wherein the cap inner surface includes a cap sealing ring; and
bonding the cap sealing ring of the cap to the substrate sealing ring on the BE dielectric to hermetically seal the MEMS level.