CPC H01L 24/16 (2013.01) [H01L 23/49816 (2013.01); H01L 24/81 (2013.01); H01L 25/0655 (2013.01); H01L 2224/10155 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/81801 (2013.01)] | 15 Claims |
1. A semiconductor package comprising:
a pad substrate on which a semiconductor chip is installed;
a solder formed on the pad substrate having a length same as or longer than a side of the semiconductor chip; and
an intagliated groove formed on the pad substrate having a length longer than at least the side of the semiconductor chip and filled with at least a certain amount of melted solder,
wherein the solder having a thickness of at least 1 μm or above is filled in the intagliated groove to have a length of at least 3 μm or above and an intermetallic compound layer is formed on a certain area included in an inner wall of the intagliated groove.
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