US 12,170,198 B2
Deposition method and plasma processing apparatus
Hiroyuki Matsuura, Iwate (JP); and Jinseok Kim, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Nov. 29, 2021, as Appl. No. 17/456,680.
Claims priority of application No. 2021-002978 (JP), filed on Jan. 12, 2021.
Prior Publication US 2022/0223403 A1, Jul. 14, 2022
Int. Cl. C23C 16/00 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/345 (2013.01); C23C 16/45536 (2013.01); C23C 16/45538 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01J 37/32449 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01J 2237/332 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A deposition method of depositing a silicon nitride film on a surface of a substrate, the deposition method comprising:
(a) exposing the substrate to a plasma formed from a nitriding gas containing nitrogen (N) and hydrogen (H);
(b) exposing the substrate to a plasma formed from hydrogen (H2) gas;
(c) exposing the substrate to a plasma formed from a process gas containing a halogen;
(d) supplying trisilylamine (TSA) to the substrate; and
(e) repeating (a) to (d) in this order.