CPC H01L 21/78 (2013.01) [H01L 21/268 (2013.01); H01L 21/56 (2013.01)] | 12 Claims |
1. A laser processing method comprising:
a scattered-light blocking film stacking step of stacking a scattered-light blocking film that blocks scattered light of a laser beam on an upper surface side of a wafer, wherein the scattered-light blocking film is stacked by coating with a liquid resin in which powder of carbon, Si, or a metal is mixed, and wherein a thickness of the scattered-light blocking film is between 0.1 to 0.5 μm;
a holding step of holding a lower surface side of the wafer by a chuck table;
a laser processing step of forming a layer of water on the upper surface side of the wafer and irradiating a region to be processed in the wafer with the laser beam while moving the chuck table and a laser beam irradiation unit relatively, wherein the laser beam is transmitted through a transparent member of a laser beam irradiation unit which is flush with an ejection port which supplies the water; and
a scattered-light blocking film removal step of removing the scattered-light blocking film from the wafer for which the laser processing step has ended.
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