CPC H04N 25/75 (2023.01) [H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H04N 25/709 (2023.01); H04N 25/745 (2023.01); H04N 25/77 (2023.01); H04N 25/79 (2023.01)] | 20 Claims |
1. An image sensor, comprising:
a pixel array comprising a first pixel group located in a first row and comprising a first select transistor and a first floating diffusion region, a second pixel group located in a second row and comprising a second select transistor and a second floating diffusion region, and a column line connected to both the first pixel group and the second pixel group,
wherein, while charges generated by a photoelectric conversion element of the first pixel group are transferred to the first floating diffusion region, the first select transistor is turned off, the second select transistor is turned on, and a first voltage is applied to the column line through the second select transistor, and
wherein a photoelectric conversion element of the second pixel group generates charges prior to the photoelectric conversion element of the first pixel group, and the charges generated by the photoelectric conversion element of the second pixel group are transferred to the second floating diffusion region.
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