CPC H01L 29/785 (2013.01) [H01L 21/823431 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01)] | 20 Claims |
1. A semiconductor structure, comprising:
a first device, comprising:
a plurality of first fins;
a first work function layer over the plurality of first fins, wherein a portion of the first work function layer is located between the plurality of first fins; and
a first contact layer over the first work function layer; and
a second device, comprising:
a plurality of second fins;
a second work function layer and the first work function layer over the plurality of second fins, wherein a portion of the first work function layer and a portion of the second work function layer are located between the plurality of second fins; and
a second contact layer over the first work function layer and the second work function layer,
wherein a distance between a bottom surface of the first work function layer of the first device and a bottom surface of the first contact layer is greater than a distance between a side surface of the first work function layer of the first device and a side surface of the first contact layer.
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