US 12,170,333 B2
Integrated circuit devices having uniformly formed structure
Sungmin Kim, Incheon (KR); and Daewon Ha, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 5, 2021, as Appl. No. 17/494,071.
Claims priority of application No. 10-2021-0030938 (KR), filed on Mar. 9, 2021.
Prior Publication US 2022/0293595 A1, Sep. 15, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 29/417 (2006.01)
CPC H01L 29/7851 (2013.01) [H01L 29/41791 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An integrated circuit device comprising:
a fin-type active area protruding from a substrate and extending in a first horizontal direction;
a stopper layer that is above and spaced apart from the fin-type active area;
a gate electrode extending in a second horizontal direction orthogonal to the first horizontal direction, on the fin-type active area, and in a space between the fin-type active area and the stopper layer; and
a gate capping layer on an upper surface of the gate electrode and an upper surface of the stopper layer,
wherein a vertical level of the upper surface of the gate electrode is higher than a lower surface of the stopper layer.