US 12,169,098 B2
RTP substrate temperature one for all control algorithm
Wolfgang Aderhold, Santa Clara, CA (US); and Yi Wang, Santa Clara, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Nov. 5, 2020, as Appl. No. 17/090,696.
Prior Publication US 2022/0136772 A1, May 5, 2022
Int. Cl. H01L 21/67 (2006.01); F27B 17/00 (2006.01); F27D 19/00 (2006.01); F27D 21/00 (2006.01)
CPC F27B 17/0025 (2013.01) [F27D 19/00 (2013.01); F27D 21/0014 (2013.01); H01L 21/67109 (2013.01); H01L 21/67248 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
detecting a dopant concentration of a substrate in a processing chamber, wherein detecting the dopant concentration comprises sending electromagnetic wavelength transmissions through the substrate, detecting an absorption of the electromagnetic wavelength transmissions by the substrate with an electromagnetic radiation detector, and comparing the absorption of the electromagnetic wavelength transmissions by the substrate to a database that includes relationships between intensities and dopant concentrations;
heating the substrate to a first temperature with an open loop tuning (OLT) heating process, wherein an extent of heating the substrate to the first temperature is determined using an empirically derived algorithm and is based on the detected dopant concentration of the substrate;
placing the substrate on an edge ring;
heating the substrate to a second temperature with a lower temperature closed loop controller;
heating the substrate to a third temperature with a higher temperature closed loop controller, the third temperature between 1,000° C. and 1,200° C., wherein a recipe of the higher temperature closed loop controller is a soak recipe having a soak ramp rate of 75° C. per second;
cooling the substrate to a fourth temperature of 850° C.; and
lifting the substrate off of the edge ring at the fourth temperature.