US 12,170,280 B2
Method of manufacturing gate structure and method of manufacturing fin-field effect transistor
Ji-Cheng Chen, Hsinchu (TW); Ching-Hwanq Su, Tainan (TW); Kuan-Ting Liu, Hsinchu (TW); and Shih-Hang Chiu, Taichung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 29, 2023, as Appl. No. 18/522,265.
Application 18/522,265 is a division of application No. 17/666,556, filed on Feb. 8, 2022, granted, now 11,855,083.
Application 17/666,556 is a continuation of application No. 15/957,912, filed on Apr. 20, 2018, granted, now 11,270,994, issued on Mar. 8, 2022.
Prior Publication US 2024/0096883 A1, Mar. 21, 2024
Int. Cl. H01L 27/088 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/3105 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 21/02205 (2013.01); H01L 21/02211 (2013.01); H01L 21/28088 (2013.01); H01L 21/28556 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823462 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/42372 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/66545 (2013.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 21/0262 (2013.01); H01L 21/31053 (2013.01); H01L 29/517 (2013.01); H01L 29/7848 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a gate structure, comprising:
forming a gate dielectric layer;
depositing a work function layer on the gate dielectric layer;
forming a barrier layer on the work function layer, comprising:
forming a first TiN layer on the work function layer;
converting a top portion of the first TiN layer into a trapping layer, wherein the trapping layer comprises silicon atoms or aluminum atoms; and
forming a second TiN layer on the trapping layer; and
depositing a metal layer on the barrier layer to introduce fluorine atoms into the barrier layer.