CPC H01L 29/7869 (2013.01) [H01L 27/0207 (2013.01); H01L 27/1225 (2013.01); H01L 29/78696 (2013.01); H01L 22/34 (2013.01); H01L 2924/0002 (2013.01)] | 3 Claims |
2. A semiconductor device comprising:
a display portion, the display portion comprising:
a light-emitting element; and
a first transistor electrically connected to a first electrode of the light-emitting element, the first transistor comprising:
a first gate electrode layer over a substrate;
a first insulating layer over the first gate electrode layer;
an oxide semiconductor layer over the first insulating layer;
a first wiring layer electrically connected to the oxide semiconductor layer via a first opening provided in a second insulating layer;
a second wiring layer electrically connected to the oxide semiconductor layer via a second opening provided in the second insulating layer; and
a second gate electrode layer over the second insulating layer,
wherein the first transistor is provided below the first electrode of the light-emitting element,
wherein the second insulating layer is provided over and in contact with the oxide semiconductor layer,
wherein the second gate electrode layer overlaps with the oxide semiconductor layer and the first gate electrode layer,
wherein the first gate electrode layer and the second gate electrode layer are electrically connected to each other,
wherein, in a cross-sectional view, the first wiring layer and the second wiring layer do not overlap with the first gate electrode layer and the second gate electrode layer,
wherein the first electrode of the light-emitting element overlaps with a channel formation region of the first transistor, and
wherein the oxide semiconductor layer is an island-shaped layer.
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