US 12,170,337 B2
Semiconductor device, manufacturing method of the semiconductor device, or display device including the semiconductor device
Yoshiaki Oikawa, Atsugi (JP); Nobuharu Ohsawa, Zama (JP); Masami Jintyou, Shimotsuga (JP); and Yasutaka Nakazawa, Tochigi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Apr. 12, 2023, as Appl. No. 18/133,622.
Application 18/133,622 is a continuation of application No. 17/330,463, filed on May 26, 2021, granted, now 11,682,733.
Application 17/330,463 is a continuation of application No. 16/704,416, filed on Dec. 5, 2019, granted, now 11,038,065, issued on Jun. 15, 2021.
Application 16/704,416 is a continuation of application No. 15/775,960, granted, now 10,559,697, issued on Feb. 11, 2020, previously published as PCT/IB2016/056761, filed on Nov. 10, 2016.
Claims priority of application No. 2015-227399 (JP), filed on Nov. 20, 2015.
Prior Publication US 2023/0268445 A1, Aug. 24, 2023
Int. Cl. H01L 29/786 (2006.01); H01L 21/28 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 21/28 (2013.01); H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H01L 29/04 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an oxide semiconductor film over a substrate;
a source electrode and a drain electrode, each in electrical contact with the oxide semiconductor film;
a gate insulating film over the oxide semiconductor film; and
a gate electrode over the gate insulating film,
wherein each of the source electrode and the drain electrode includes a first conductive layer, a second conductive layer over the first conductive layer, and a third conductive layer over the second conductive layer,
wherein the first conductive layer and the third conductive layer are in physical contact with each other over the oxide semiconductor film, and
wherein the second conductive layer of the source electrode and the second conductive layer of the drain electrode do not overlap a top surface of the oxide semiconductor film.