CPC H01L 33/06 (2013.01) [H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01)] | 13 Claims |
1. An optoelectronic semiconductor component comprising:
a first semiconductor layer of an n-conductivity type, the first semiconductor layer being of AlxGa1-xN composition, with 0.3≤x≤0.95;
a second semiconductor layer of a p-conductivity type;
an active zone between the first semiconductor layer and the second semiconductor layer, the active zone comprising a quantum well structure; and
an intermediate layer between the first semiconductor layer and the active zone,
wherein the intermediate layer comprises a layer stack comprising first sub-layers of an Aly′Ga1-y′N composition (0≤y′≤1) having a layer thickness d′, and second sub-layers of an Aly″Ga1-y″N composition (0≤y″≤y′) having a layer thickness d″, alternately stacked one on top of another, and wherein x*1.05≤yavg≤1 and yavg=(y′*d′+y″*d″)/(d′+d″), and
wherein the intermediate layer is located directly adjacent to the active zone.
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