US 12,170,340 B1
Semiconductor rectifier and manufacturing method of the same
Tao Long, Shanghai (CN); Ze Rui Chen, Plano, TX (US); Pin-Hao Huang, New Taipei (TW); Paul Keith Gurry, Oldham (GB); and Li-Hsien Chou, New Taipei (TW)
Assigned to Diodes Incorporated, Plano, TX (US)
Filed by Diodes Incorporated, Plano, TX (US)
Filed on Mar. 22, 2024, as Appl. No. 18/614,439.
Claims priority of application No. 202310809114.X (CN), filed on Jul. 3, 2023.
Int. Cl. H01L 21/308 (2006.01); H01L 21/768 (2006.01); H01L 21/8232 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/86 (2006.01)
CPC H01L 29/86 (2013.01) [H01L 21/308 (2013.01); H01L 21/76831 (2013.01); H01L 21/8232 (2013.01); H01L 21/8234 (2013.01); H01L 29/0684 (2013.01); H01L 29/1608 (2013.01); H01L 29/42356 (2013.01); H01L 21/823437 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A manufacturing method for a semiconductor rectifier device, the manufacturing method comprising:
forming a patterned layer on a silicon carbide layer;
etching the silicon carbide layer using the patterned layer as a mask, to form a first trench and a second trench adjacent to the first trench;
performing ion implantation on the silicon carbide layer using the patterned layer as the mask;
forming a carbon-containing layer to cover the silicon carbide layer;
thereafter, annealing the silicon carbide layer; and
after the annealing, removing the carbon-containing layer and forming a gate structure on the silicon carbide layer between the first trench and the second trench, wherein the gate structure has a first side wall and a second side wall opposite to the first side wall, the first side wall and a side wall of the first trench are continuous, and the second side wall and a side wall of the second trench are continuous.