CPC H01L 33/62 (2013.01) [H01L 33/0093 (2020.05); H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/007 (2013.01); H01L 33/0095 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0066 (2013.01)] | 17 Claims |
1. A light emitting device, comprising:
a silicon substrate;
a nickel silicide layer disposed over and in direct contact with the silicon substrate;
a mirror layer disposed over the nickel silicide layer;
a first diffusion barrier layer disposed between the nickel silicide layer and the mirror layer, wherein the first diffusion barrier layer comprises an unconsumed portion of either a nickel layer or a nickel alloy layer from which the nickel silicide layer was at least partially formed;
a second diffusion barrier layer disposed over and in direct contact with the mirror layer; and
a light emitting structure disposed over the second diffusion barrier layer.
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