US 12,171,136 B2
Solar cell cutting and passivation integrated processing method and solar cell thereof
Feng Chen, Zhejiang (CN); Buyi Yan, Zhejiang (CN); and Jizhong Yao, Zhejiang (CN)
Assigned to Hangzhou Microquanta Semiconductor Co., Ltd., Zhejiang (CN)
Appl. No. 17/638,409
Filed by Hangzhou Microquanta Semiconductor Co., Ltd., Zheijiang (CN)
PCT Filed Jun. 1, 2020, PCT No. PCT/CN2020/093813
§ 371(c)(1), (2) Date Feb. 25, 2022,
PCT Pub. No. WO2021/036383, PCT Pub. Date Mar. 4, 2021.
Claims priority of application No. 201910792106.2 (CN), filed on Aug. 26, 2019.
Prior Publication US 2022/0320439 A1, Oct. 6, 2022
Int. Cl. H10K 71/00 (2023.01); H01G 9/20 (2006.01); H10K 30/00 (2023.01); H10K 30/88 (2023.01)
CPC H10K 71/621 (2023.02) [H01G 9/2009 (2013.01); H10K 30/451 (2023.02); H10K 30/88 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A solar cell, comprising a structured trench on a back electrode layer, the solar cell being formed by:
providing the solar cell sequentially comprising a substrate, a front electrode layer, a light absorption layer and a back electrode layer,
disposing a protective layer on a surface of the back electrode layer before laser structured cutting is performed for the back electrode layer,
performing laser structured cutting for the back electrode layer, or the back electrode layer and the light absorption layer simultaneously through the protective layer to obtain a corresponding structured trench while the protective layer is kept from being cut by laser, and a material of the protective layer is partially molten due to a localized high temperature generated by the laser structured cutting and infiltrates into an underlying corresponding structured trench, and
after the laser structured cutting process is completed for the back electrode layer or the back electrode layer and the light absorption layer simultaneously, removing the protective layer from the surface of the back electrode layer, and retaining the material of the protective layer infiltrated into the structured trench.