US 12,171,096 B2
Microelectronic devices, and related memory devices and electronic systems
Erwin E. Yu, San Jose, CA (US); Michele Piccardi, Cupertino, CA (US); and Surendranath C. Eruvuru, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 13, 2021, as Appl. No. 17/445,045.
Prior Publication US 2023/0047662 A1, Feb. 16, 2023
Int. Cl. G11C 5/06 (2006.01); G11C 5/02 (2006.01); H01L 23/538 (2006.01); H01L 27/092 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); B81B 1/00 (2006.01)
CPC H10B 41/27 (2023.02) [G11C 5/025 (2013.01); G11C 5/06 (2013.01); H01L 23/5386 (2013.01); H01L 27/092 (2013.01); H10B 43/27 (2023.02); B81B 1/00 (2013.01); B81B 2201/07 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a base structure comprising a logic region including logic devices;
a memory array overlying the base structure and comprising vertically extending strings of memory cells within a horizontal area of the logic region of the base structure; and
a conductive pad tier overlying the memory array and comprising:
first conductive pads substantially outside of the horizontal area of the logic region of the base structure; and
second conductive pads horizontally neighboring the first conductive pads and within the horizontal area of the logic region of the base structure.