CPC H01L 21/02049 (2013.01) [H01L 21/0206 (2013.01); H01L 21/02068 (2013.01); H01L 21/02658 (2013.01); H01L 21/31116 (2013.01); H01L 21/32135 (2013.01); H01L 21/67028 (2013.01); H01L 21/67069 (2013.01)] | 17 Claims |
1. A method of processing a substrate, comprising:
positioning a substrate on a substrate support in a processing volume of a processing chamber;
flowing a first process gas into the processing volume, the first process gas comprising HF;
flowing a second process gas into the processing volume, the second process gas comprising a nitrogen-containing species; and
exposing the substrate to the first process gas and the second process gas while cooling the substrate to remove oxide from the substrate under oxide removal conditions, wherein exposing the substrate to the first process gas and the second process gas forms a (C5H5N)2SiF4 complex.
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