CPC H01L 29/86 (2013.01) [H01L 21/308 (2013.01); H01L 21/76831 (2013.01); H01L 21/8232 (2013.01); H01L 21/8234 (2013.01); H01L 29/0684 (2013.01); H01L 29/1608 (2013.01); H01L 29/42356 (2013.01); H01L 21/823437 (2013.01)] | 20 Claims |
1. A manufacturing method for a semiconductor rectifier device, the manufacturing method comprising:
forming a patterned layer on a silicon carbide layer;
etching the silicon carbide layer using the patterned layer as a mask, to form a first trench and a second trench adjacent to the first trench;
performing ion implantation on the silicon carbide layer using the patterned layer as the mask;
forming a carbon-containing layer to cover the silicon carbide layer;
thereafter, annealing the silicon carbide layer; and
after the annealing, removing the carbon-containing layer and forming a gate structure on the silicon carbide layer between the first trench and the second trench, wherein the gate structure has a first side wall and a second side wall opposite to the first side wall, the first side wall and a side wall of the first trench are continuous, and the second side wall and a side wall of the second trench are continuous.
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