CPC H01L 25/18 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/561 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/3142 (2013.01); H01L 23/49816 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 25/0657 (2013.01); H01L 27/01 (2013.01); H01L 28/90 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06572 (2013.01); H01L 2924/19011 (2013.01); H01L 2924/19041 (2013.01)] | 20 Claims |
1. A method comprising:
forming a first package component comprising:
attaching a first semiconductor device over a first carrier substrate, the first semiconductor device comprising a first plurality of passive elements;
forming a first electrical connector over the first carrier substrate;
encapsulating the first semiconductor device and the first electrical connector with a first encapsulant;
forming a first redistribution structure over the first semiconductor device, the first electrical connector, and the first encapsulant, the first redistribution structure comprising a plurality of dielectric layers with metallization patterns therein;
bonding a second semiconductor device to the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements, the second semiconductor device and the first semiconductor device being bonded to opposite sides of the first redistribution structure;
forming a second electrical connector over the first redistribution structure;
encapsulating the second semiconductor device and the second electrical connector with a second encapsulant; and
forming a second package component comprising:
attaching a third semiconductor device to a second carrier substrate, the third semiconductor device comprising a third plurality of passive elements;
forming a third electrical connector over the second carrier substrate; and
encapsulating the third semiconductor device and the third electrical connector with a third encapsulant;
forming a second redistribution structure over the third semiconductor device, the second electrical connector, and the third encapsulant, the second redistribution structure comprising a plurality of dielectric layers with metallization patterns therein;
bonding a fourth semiconductor device to the second redistribution structure, the fourth semiconductor device comprising a fourth plurality of passive elements, the fourth semiconductor device and the third semiconductor device being bonded to opposite sides of the second redistribution structure; and
bonding the first package component to the second package component with a first set of conductive connectors, at least one of the first set of conductive connectors electrically contacting the first electrical connector and the second electrical connector.
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