CPC H10B 53/30 (2023.02) [H01L 28/60 (2013.01)] | 20 Claims |
1. A method, comprising:
forming a bottom electrode layer, a ferroelectric layer over the bottom electrode layer, and a top electrode layer over the ferroelectric layer;
forming a mask over the top electrode layer;
with the mask in place, performing an etch to remove a portion of the top electrode layer to leave a top electrode structure in place and stopping the etch at a height corresponding to a surface of the ferroelectric layer to define a ferroelectric structure including a ledge along a sidewall of the ferroelectric structure, wherein the ledge is spaced apart from an uppermost surface of the ferroelectric structure by a distance that is approximately 5% to approximately 30% of a total height of the ferroelectric structure;
forming a conformal dielectric layer over the surface of the ferroelectric layer, along sidewalls of the top electrode structure, and over an upper surface of the top electrode structure;
etching back the conformal dielectric layer to form a dielectric sidewall spacer structure on the surface of the ferroelectric layer and along sidewalls of the top electrode structure;
with the mask and the dielectric sidewall spacer structure in place, removing a portion of the ferroelectric layer and removing a portion of the bottom electrode layer;
forming a first liner along outermost sidewalls of the dielectric sidewall spacer structure and over an upper surface of the mask, the first liner having a first material composition; and
forming a second liner along outermost sidewalls of the first liner and over an upper surface of the first liner, the second liner having a second material composition that differs from the first material composition.
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