US 12,170,320 B2
Semiconductor device and method of manufacture
Ming-Chia Tai, Zhubei (TW); Ju-Yuan Tzeng, Taipei (TW); Hsin-Che Chiang, Taipei (TW); Yuan-Sheng Huang, Taichung (TW); and Chun-Sheng Liang, Puyan Township (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 28, 2023, as Appl. No. 18/309,564.
Application 18/309,564 is a continuation of application No. 17/232,644, filed on Apr. 16, 2021, granted, now 11,670,695.
Application 17/232,644 is a continuation of application No. 16/050,904, filed on Jul. 31, 2018, granted, now 10,991,805, issued on Apr. 27, 2021.
Prior Publication US 2023/0268404 A1, Aug. 24, 2023
Int. Cl. H01L 29/417 (2006.01); H01L 21/3065 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/41791 (2013.01) [H01L 21/3065 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device comprising:
depositing a metal layer over a semiconductor fin;
depositing a semiconductor layer over the metal layer;
oxidizing a first portion of the semiconductor layer forming an oxide layer over a second portion of the semiconductor layer;
performing a first plasma etch to remove the oxide layer from over the second portion of the semiconductor layer;
performing a second plasma etch to remove the second portion of the semiconductor layer, wherein performing the second plasma etch forms a by-product layer, wherein the by-product layer covers the metal layer; and
removing the by-product layer by a sublimation process.