CPC H01L 21/0228 (2013.01) [C23C 16/345 (2013.01); C23C 16/45536 (2013.01); C23C 16/45538 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01J 37/32449 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01J 2237/332 (2013.01)] | 5 Claims |
1. A deposition method of depositing a silicon nitride film on a surface of a substrate, the deposition method comprising:
(a) exposing the substrate to a plasma formed from a nitriding gas containing nitrogen (N) and hydrogen (H);
(b) exposing the substrate to a plasma formed from hydrogen (H2) gas;
(c) exposing the substrate to a plasma formed from a process gas containing a halogen;
(d) supplying trisilylamine (TSA) to the substrate; and
(e) repeating (a) to (d) in this order.
|