CPC H01L 29/063 (2013.01) [H01L 27/0255 (2013.01); H01L 29/4236 (2013.01); H01L 29/7813 (2013.01)] | 20 Claims |
1. A method comprising:
growing an epitaxial layer over a substrate;
forming a plurality of gates in the epitaxial layer;
forming a breakdown voltage enhancement and leakage prevention structure in the epitaxial layer, comprising a body ring structure formed through an implantation process, wherein the body ring structure is a concentric ring structure;
forming a source and a body region in the epitaxial layer;
forming an interlayer dielectric layer over the epitaxial layer;
forming a gate-source Electrostatic Discharge (ESD) diode and a plurality of trenches in the interlayer dielectric layer;
forming a plurality of p+ regions at bottoms of respective trenches;
performing a metal deposition process to fill the plurality of trenches to form a plurality of source contact plugs and a gate contact plug;
forming a source contact and a gate contact through an etching process;
connecting the source contact to the source and a first terminal of the gate-source ESD diode structure;
coupling the gate contact to the plurality of gates;
connecting the gate contact to a second terminal of the gate-source ESD diode structure; and
forming a drain contact underneath the substrate.
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