US 12,171,098 B2
Three-dimensional memory device with improved charge lateral migration and method for forming the same
Xiaoxin Liu, Wuhan (CN); Lei Xue, Wuhan (CN); and Zhiliang Xia, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Sep. 29, 2021, as Appl. No. 17/488,879.
Application 17/488,879 is a continuation of application No. PCT/CN2021/115782, filed on Aug. 31, 2021.
Claims priority of application No. 202011120882.7 (CN), filed on Oct. 19, 2020; and application No. 202110628570.5 (CN), filed on Jun. 7, 2021.
Prior Publication US 2022/0123016 A1, Apr. 21, 2022
Int. Cl. H10B 43/27 (2023.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01)
CPC H10B 43/27 (2023.02) [H01L 29/40117 (2019.08); H01L 29/4234 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A three-dimensional (3D) memory device, comprising:
a stack structure comprising interleaved conductive layers and dielectric layers; and
a channel structure extending through the stack structure along a first direction, the channel structure comprising a semiconductor channel, and a memory film over the semiconductor channel, and the memory film comprising a tunneling layer over the semiconductor channel, a storage layer over the tunneling layer, and a blocking layer over the storage layer,
wherein the storage layer is separated by the dielectric layers into a plurality of storage sections each in contact with corresponding adjacent dielectric layers, and
wherein the blocking layer, the storage layer, and the tunneling layer are fully separated by the dielectric layers into a plurality of sections isolated from each other.