CPC H01L 21/32135 (2013.01) [C23F 1/12 (2013.01); H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/30604 (2013.01); H01L 21/30621 (2013.01)] | 9 Claims |
1. A method of processing a substrate, comprising:
preparing the substrate having a metal nitride film formed on a surface thereof; and
slimming the metal nitride film by pulse-supplying a metal and halogen-containing gas to the metal nitride film without supplying oxygen-containing gas to the metal nitride film,
wherein the metal and the halogen-containing gas contain tungsten hexafluoride.
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