CPC H01L 29/7851 (2013.01) [H01L 29/41791 (2013.01)] | 19 Claims |
1. An integrated circuit device comprising:
a fin-type active area protruding from a substrate and extending in a first horizontal direction;
a stopper layer that is above and spaced apart from the fin-type active area;
a gate electrode extending in a second horizontal direction orthogonal to the first horizontal direction, on the fin-type active area, and in a space between the fin-type active area and the stopper layer; and
a gate capping layer on an upper surface of the gate electrode and an upper surface of the stopper layer,
wherein a vertical level of the upper surface of the gate electrode is higher than a lower surface of the stopper layer.
|