US 12,169,357 B2
Method of fabricating and servicing a photomask
Chun-Fu Yang, Kaohsiung (TW); Pei-Cheng Hsu, Taipei (TW); Ta-Cheng Lien, Cyonglin Township (TW); and Hsin-Chang Lee, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 15, 2023, as Appl. No. 18/210,551.
Application 18/210,551 is a continuation of application No. 17/839,266, filed on Jun. 13, 2022, granted, now 11,714,350.
Application 17/839,266 is a continuation of application No. 16/568,028, filed on Sep. 11, 2019, granted, now 11,360,384, issued on Jun. 14, 2022.
Claims priority of provisional application 62/738,003, filed on Sep. 28, 2018.
Prior Publication US 2023/0341767 A1, Oct. 26, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 1/82 (2012.01); G03F 7/20 (2006.01)
CPC G03F 1/82 (2013.01) [G03F 7/2002 (2013.01)] 20 Claims
 
1. A method, comprising,
forming a photomask;
selectively exposing a first photoresist layer disposed over a first substrate to actinic radiation using the photomask; and
applying a plasma to the photomask in a plasma processing chamber to remove contamination from a surface of the photomask.