US 12,170,223 B2
Method of fabricating redistribution circuit structure
Po-Han Wang, Hsinchu (TW); Yu-Hsiang Hu, Hsinchu (TW); and Hung-Jui Kuo, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 31, 2023, as Appl. No. 18/362,083.
Application 18/362,083 is a continuation of application No. 17/409,010, filed on Aug. 23, 2021, granted, now 11,817,352.
Application 17/409,010 is a continuation of application No. 16/415,437, filed on May 17, 2019, granted, now 11,101,176.
Claims priority of provisional application 62/691,721, filed on Jun. 29, 2018.
Prior Publication US 2023/0377969 A1, Nov. 23, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76898 (2013.01) [H01L 21/563 (2013.01); H01L 21/76873 (2013.01); H01L 21/76885 (2013.01); H01L 23/3171 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/5329 (2013.01); H01L 24/09 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/02381 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, the method comprising:
forming a first conductive feature over a substrate;
forming a photosensitive material layer over the substrate, the photosensitive material layer covering the first conductive feature;
exposing an upper portion the photosensitive material layer, wherein a lower portion of the photosensitive material layer remains unexposed; and
removing the upper portion of the photosensitive material layer to expose the first conductive feature, wherein the lower portion remains and extends along a lower sidewall of the first conductive feature.