US 12,170,229 B2
Semiconductor devices and methods of manufacturing thereof
Shu-Uei Jang, Hsinchu (TW); Shu-Yuan Ku, Zhubei (TW); and Shih-Yao Lin, New Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 21, 2022, as Appl. No. 17/869,995.
Application 17/869,995 is a division of application No. 17/007,555, filed on Aug. 31, 2020, granted, now 11,527,445.
Prior Publication US 2022/0359306 A1, Nov. 10, 2022
Int. Cl. H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01)
CPC H01L 21/823481 (2013.01) [H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of making a semiconductor device, comprising:
forming a first semiconductor fin and a second semiconductor fin over a substrate that both extend along a first direction;
forming a dielectric fin that extends along the first direction and is disposed between the first and second semiconductor fins, wherein the dielectric fin has a first width along a second direction perpendicular to the first direction;
forming a dummy gate structure that extends along the second direction and straddles the first and second semiconductor fins and the dielectric fin;
comparing the first width with a predefined threshold;
if the first width is greater than the predefined threshold, removing a first portion of the dummy gate structure over the dielectric fin to form a first trench that has a second width along the second direction, wherein the second width is less than the first width;
if the first width is less than or equal to the predefined threshold, removing a second portion of the dummy gate structure over the dielectric fin to form a second trench that has a third width along the second direction, wherein the third width is equal to the first width; and
filling the first trench or the second trench with a first dielectric material.