US 12,170,303 B2
Semiconductor device and electronic equipment
Masaaki Bairo, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/910,915
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Feb. 17, 2021, PCT No. PCT/JP2021/005876
§ 371(c)(1), (2) Date Sep. 12, 2022,
PCT Pub. No. WO2021/199754, PCT Pub. Date Oct. 7, 2021.
Claims priority of application No. 2020-060404 (JP), filed on Mar. 30, 2020.
Prior Publication US 2023/0207597 A1, Jun. 29, 2023
Int. Cl. H01L 27/146 (2006.01); H04N 25/773 (2023.01); H01L 23/00 (2006.01)
CPC H01L 27/14634 (2013.01) [H01L 27/14636 (2013.01); H04N 25/773 (2023.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08145 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate;
a first capacitative element stacked on the semiconductor substrate; and
a second capacitative element that is stacked on a side of the semiconductor substrate opposite to a side on which the first capacitative element is stacked,
wherein a capacitance value of the second capacitative element has bias characteristics that are opposite to bias characteristics of a capacitance value of the first capacitative element, and
wherein the first capacitative element and the second capacitative element are connected in parallel,
wherein, where n is an integer, n-number of the first and second capacitative elements are provided, and
wherein the n-number of capacitative elements are connected in parallel such that, when a capacitance value of the elements as a whole when a potential difference between electrodes is equal to an operating voltage is denoted by Ctotal(V), a capacitance value of the elements as a whole when the potential difference between electrodes is 0 is denoted by Ctotal(0), a bias dependence coefficient including positive or negative of a capacitance value of each capacitative element is denoted by An, an element size of each capacitative element is denoted by Sn, and a capacitance density of each capacitative element is denoted by Cn(V), bias characteristics of a capacitance value of the capacitative elements as a whole
Ctotal(V)/Ctotal(0)=ΣAn*Cn(V)*Sn/Ctotal(0)
most closely approaches 1.