US 12,170,255 B2
Semiconductor device including base member with protruding portion at circumferential edge
Toshiaki Kitano, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Appl. No. 17/595,704
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Aug. 30, 2019, PCT No. PCT/JP2019/034094
§ 371(c)(1), (2) Date Nov. 22, 2021,
PCT Pub. No. WO2021/038824, PCT Pub. Date Mar. 4, 2021.
Prior Publication US 2022/0254742 A1, Aug. 11, 2022
Int. Cl. H01L 23/66 (2006.01); H01L 21/52 (2006.01); H01L 21/822 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 27/04 (2006.01)
CPC H01L 23/66 (2013.01) [H01L 23/481 (2013.01); H01L 24/32 (2013.01); H01L 2224/32221 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a base member of a semiconductor material which forms a thin plate shape;
a front face electrode which is placed on one of surfaces of the base member;
a rear face electrode which covers another one of the surfaces of the base member; and
plural via holes, each of which forms a hole shape provided with the front face electrode as a bottom and being open onto said another surface, and through which the front face electrode and the rear face electrode are electrically connected to each other;
wherein, at a circumferential edge portion of the base member on its side where said another surface is located, a protrusion portion which protrudes in a thickness direction is disposed intermittently along a circumferential direction, and an entire portion of the another surface between the plural via holes is recessed relative to the protrusion in the thickness direction.