CPC H01L 21/76898 (2013.01) [H01L 21/563 (2013.01); H01L 21/76873 (2013.01); H01L 21/76885 (2013.01); H01L 23/3171 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/5329 (2013.01); H01L 24/09 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/02381 (2013.01)] | 20 Claims |
1. A method of fabricating a semiconductor device, the method comprising:
forming a first conductive feature over a substrate;
forming a photosensitive material layer over the substrate, the photosensitive material layer covering the first conductive feature;
exposing an upper portion the photosensitive material layer, wherein a lower portion of the photosensitive material layer remains unexposed; and
removing the upper portion of the photosensitive material layer to expose the first conductive feature, wherein the lower portion remains and extends along a lower sidewall of the first conductive feature.
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