CPC H10N 60/01 (2023.02) [H10N 60/0156 (2023.02); H10N 60/0912 (2023.02); H10N 60/10 (2023.02); H10N 60/12 (2023.02); H10N 60/805 (2023.02); H10N 60/85 (2023.02); H10N 60/128 (2023.02)] | 21 Claims |
1. A semiconductor-superconductor hybrid device, comprising:
a semiconductor component;
a first superconductor component over a first portion of the semiconductor component, the first superconductor component comprising a first superconductor material;
a second superconductor component on the first superconductor component, the second superconductor component comprising a second superconductor material different from the first superconductor material; and
a passivating layer over a second portion of the semiconductor component, the passivating layer comprising an oxide of the first superconductor material.
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