US 12,170,306 B2
Imaging device and electronic device
Yoshimichi Kumagai, Kanagawa (JP); Takashi Abe, Kanagawa (JP); and Ryoto Yoshita, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Apr. 26, 2023, as Appl. No. 18/139,778.
Application 18/139,778 is a continuation of application No. 17/202,929, filed on Mar. 16, 2021, granted, now 11,646,342.
Application 17/202,929 is a continuation of application No. 16/491,017, granted, now 10,991,753, issued on Apr. 27, 2021, previously published as PCT/JP2018/009144, filed on Mar. 9, 2018.
Claims priority of application No. 2017-055309 (JP), filed on Mar. 22, 2017.
Prior Publication US 2023/0261030 A1, Aug. 17, 2023
Int. Cl. H01L 27/148 (2006.01); H04N 25/76 (2023.01)
CPC H01L 27/14818 (2013.01) [H04N 25/76 (2023.01)] 20 Claims
OG exemplary drawing
 
1. A light detecting device, comprising:
a photoelectric conversion region configured to convert received light into a charge;
a charge holding region configured to hold a charge from the photoelectric conversion region;
an overflow gate connected to the photoelectric conversion region;
a first light shielding part configured to shield light,
wherein the charge holding region includes a transfer transistor configured to transfer the charge from the photoelectric conversion region to the charge holding region; and
a floating diffusion region including a transfer transistor configured to transfer a charge from the charge holding region to the floating diffusion region,
wherein the transfer transistor for the charge holding region is provided next to the transfer transistor for the floating diffusion region in a first direction in a plan view,
wherein the transfer transistor for the charge holding region is provided next to the overflow gate in a second direction, opposite the first direction, in the plan view,
wherein the photoelectric conversion region, the charge holding region and the floating diffusion region are each formed in a semiconductor substrate having a predetermined thickness, and
wherein the first light shielding part is provided between the photoelectric conversion region and the charge holding region in the second direction in the plan view.