US 12,170,318 B2
Nitride semiconductor, semiconductor device, and method for manufacturing nitride semiconductor
Toshiki Hikosaka, Kawasaki (JP); Hajime Nago, Yokohama (JP); Jumpei Tajima, Mitaka (JP); and Shinya Nunoue, Ichikawa (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Feb. 10, 2022, as Appl. No. 17/650,575.
Claims priority of application No. 2021-132234 (JP), filed on Aug. 16, 2021.
Prior Publication US 2023/0046560 A1, Feb. 16, 2023
Int. Cl. H01L 29/36 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/36 (2013.01) [H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/7786 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A nitride semiconductor, comprising:
a base body;
a nitride member; and
an intermediate region provided between the base body and the nitride member,
the nitride member including,
a first nitride region including Alx1Ga1-x1N (0<x1≤1), and
a second nitride region including Alx2Ga1-x2N (0≤x2<1, x2<x1),
the first nitride region being between the intermediate region and the second nitride region,
the intermediate region including nitrogen and carbon,
a concentration of carbon in the intermediate region being not less than 1.5×1019/cm3 and not more than 6×1020/cm3.