US 12,170,227 B2
Stacked semiconductor device with nanostructure channels
Chien-Te Tu, Hsinchu (TW); Hsin-Cheng Lin, Taipei (TW); and Chee-Wee Liu, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and NATIONAL TAIWAN UNIVERSITY, Taipei (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and NATIONAL TAIWAN UNIVERSITY, Taipei (TW)
Filed on Sep. 26, 2023, as Appl. No. 18/474,894.
Application 18/474,894 is a division of application No. 17/673,890, filed on Feb. 17, 2022, granted, now 11,955,384.
Prior Publication US 2024/0021479 A1, Jan. 18, 2024
Int. Cl. H01L 21/822 (2006.01); H01L 21/761 (2006.01); H01L 21/8238 (2006.01); H01L 27/06 (2006.01); H01L 27/092 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/8221 (2013.01) [H01L 21/761 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 21/823878 (2013.01); H01L 27/0688 (2013.01); H01L 27/0922 (2013.01); H01L 27/1207 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a bottom transistor comprising:
a first channel layer;
first source/drain epitaxial structures on opposite sides of the first channel layer; and
a first gate structure around the first channel layer;
a top transistor over the bottom transistor and comprising:
a second channel layer;
second source/drain epitaxial structures on opposite sides of the second channel layer; and
a second gate structure around the second channel layer; and
an epitaxial isolation structure between and in contact with one of the first source/drain epitaxial structures and one of the second source/drain epitaxial structures, such that said one of the first source/drain epitaxial structures is electrically isolated from said one of the second source/drain epitaxial structures, wherein the epitaxial isolation structure comprises first epitaxial layers of a first conductivity type interposed by second epitaxial layers of a second conductivity type different from the first conductivity type.