US 12,170,114 B2
Three-dimensional memory device and method for reading the same
Ting Cheng, Wuhan (CN); Hongtao Liu, Wuhan (CN); Lei Jin, Wuhan (CN); Xiangnan Zhao, Wuhan (CN); Xuezhun Xie, Wuhan (CN); Shiyu Xia, Wuhan (CN); and Yuanyuan Min, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Dec. 15, 2022, as Appl. No. 18/082,457.
Application 18/082,457 is a continuation of application No. PCT/CN2021/130274, filed on Nov. 12, 2021.
Claims priority of application No. 202110013950.8 (CN), filed on Jan. 6, 2021.
Prior Publication US 2023/0120129 A1, Apr. 20, 2023
Int. Cl. G11C 7/00 (2006.01); G11C 11/00 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/102 (2013.01) [G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for reading a three-dimensional (3D) memory device, wherein the 3D memory device comprises memory cell strings, each memory cell string comprises memory cells, a topmost memory cell in each memory cell string is connected to a top selection gate that is connected to a bit line, a bottommost memory cell in each memory cell string is connected to a bottom selection gate, and the method comprises:
sequentially programming memory cells in one of the memory cell strings according to a programming sequence;
dividing the memory cells in the one of the memory cell strings into memory groups according to the programming sequence, wherein a number of the memory groups is less than or equal to a number of memory cells in the one of the memory cell strings; and
in performing a reading operation on a memory cell in the one of the memory cell strings, applying a corresponding hit line voltage to the one of the memory cell strings according to a programming sequence of a memory group to which the memory cell belongs,
wherein the earlier the programming sequence of the memory group to which the memory cell belongs, the greater the corresponding hit line voltage applied to the one of the memory cell strings during the reading operation.