US 12,169,366 B2
Voltage contrast metrology mark
Cyrus Emil Tabery, San Jose, CA (US); Simon Hendrik Celine Van Gorp, Oud-Turnhout (BE); Simon Philip Spencer Hastings, San Jose, CA (US); and Brennan Peterson, Longmont, CO (US)
Assigned to ASML Netherlands B.V., Veldhoven (NL)
Appl. No. 16/772,022
Filed by ASML Netherlands B.V., Veldhoven (NL)
PCT Filed Dec. 7, 2018, PCT No. PCT/EP2018/083994
§ 371(c)(1), (2) Date Jun. 11, 2020,
PCT Pub. No. WO2019/115391, PCT Pub. Date Jun. 20, 2019.
Claims priority of provisional application 62/727,925, filed on Sep. 6, 2018.
Claims priority of provisional application 62/597,933, filed on Dec. 12, 2017.
Claims priority of provisional application 62/597,413, filed on Dec. 11, 2017.
Prior Publication US 2021/0088917 A1, Mar. 25, 2021
Int. Cl. G03F 7/00 (2006.01); H01L 21/66 (2006.01); H01L 23/544 (2006.01)
CPC G03F 7/70683 (2013.01) [G03F 7/70625 (2013.01); G03F 7/70633 (2013.01); H01L 22/32 (2013.01); H01L 23/544 (2013.01); H01L 2223/54426 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A measurement mark comprising:
a set of first test structures formed in a first layer on a substrate, each of the set of first test structures comprising a plurality of first features made of first conducting material; and
a set of second test structures formed in a second layer adjacent to the first layer, each of the set of second test structures comprising a plurality of second features made of second conducting material,
wherein the measurement mark is configured to indicate connectivity between the set of first test structures and associated second test structures in the set of second test structures when imaged using a voltage-contrast imaging method,
wherein each of the plurality of first features in the set of first test structures is configured, in combination with a corresponding second feature of the set of second test structures, to convey overlay information in a first direction along a surface of the substrate and
overlay information in a second direction along a surface of the substrate, the second direction differing from the first direction;
wherein multiple test structures of the set of first test structures or multiple test structures of the set of second test structures are configured to have varying pitch values in the first direction.