CPC H01L 24/20 (2013.01) [H01L 21/568 (2013.01); H01L 24/19 (2013.01); H01L 2224/19 (2013.01); H01L 2224/21 (2013.01)] | 30 Claims |
1. A method of forming an electronic assembly, comprising:
disposing a component over a temporary carrier, the component comprising conductive studs over an active layer of the component;
disposing a first layer of encapsulant, in a single step, around four side surfaces of the component, over the active layer of the component, contacting at least a portion of the sides of the conductive studs, and over the temporary carrier;
planarizing the first layer of encapsulant over the active layer of the component to form a substantially planar surface, wherein the substantially planar surface comprises ends of the conductive studs and the first layer of encapsulant;
forming a first conductive layer and first conductive stumps over the first layer of encapsulant and configured to be electrically coupled with the conductive studs of the component;
disposing a second layer of encapsulant, in a single step, over the first conductive layer and surrounding at least a portion of the first conductive stumps, wherein ends of the first conductive stumps are exposed with respect to the second layer of encapsulant;
forming a second conductive layer and second conductive stumps over the second layer of encapsulant and configured to be electrically coupled with the first conductive layer and first conductive stumps;
disposing a third layer of encapsulant, in a single step, over the second conductive layer and surrounding at least a portion of the second conductive stumps, wherein ends of the second conductive stumps are exposed with respect to the third layer of encapsulant;
disposing a conductive contact over, or within, the third layer of encapsulant and configured to be electrically coupled to the component through one or more of the first conductive stump and the second conductive stumps; and
removing the temporary carrier;
wherein the first layer of encapsulant, the second layer of encapsulant, and the third layer of encapsulant comprise a surface roughness of less than 500 nanometers (nm) over a characteristic measurement distance,
wherein the first conductive layer and the second conductive layer comprise lower surfaces comprising corresponding surface roughness less than 500 nm over a characteristic measurement distance, and
wherein the first conductive stumps are formed of a single layer of material and at least a portion of sidewalls of the first conductive stumps directly contact the second encapsulant.
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