US 12,170,331 B2
Conductive structures and methods of formation
Cheng-Wei Chang, Taipei (TW); Chia-Hung Chu, Taipei (TW); Hsu-Kai Chang, Hsinchu (TW); Sung-Li Wang, Zhubei (TW); Kuan-Kan Hu, Hsinchu (TW); Shuen-Shin Liang, Hsinchu County (TW); Kao-Feng Lin, New Taipei (TW); Hung Pin Lu, Hsinchu (TW); Yi-Ying Liu, Hsinchu (TW); and Chuan-Hui Shen, Kaohsiung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 16, 2022, as Appl. No. 17/651,314.
Claims priority of provisional application 63/220,236, filed on Jul. 9, 2021.
Prior Publication US 2023/0009981 A1, Jan. 12, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01)
CPC H01L 29/785 (2013.01) [H01L 21/28518 (2013.01); H01L 21/768 (2013.01); H01L 29/401 (2013.01); H01L 29/41791 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first opening through one or more first dielectric layers and to a source/drain region;
forming a silicon nitride (SixNy) layer on sidewalls of the one or more first dielectric layers in the first opening;
performing, after forming the silicon nitride layer, a plasma-based deposition operation to selectively form a titanium silicide (TiSix) layer on a top surface of the source/drain region in the first opening;
filling the first opening with a conductive material to form a source/drain contact over the silicon nitride layer and over the titanium silicide layer;
forming one or more second dielectric layers above the one or more first dielectric layers;
forming a second opening through the one or more second dielectric layers and to the source/drain contact; and
filling the second opening with the conductive material to form a source/drain interconnect structure connected to the source/drain contact.