CPC H01L 29/0673 (2013.01) [H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/78642 (2013.01)] | 20 Claims |
1. A structure comprising:
a bottom source/drain region;
a top source/drain region;
a gate structure extending between the bottom source/drain region and the top source/drain region; and
a vertical nanowire in a channel region of the gate structure,
wherein the gate structure comprises a gate dielectric material contacting the vertical nanowire and a gate metal material and further comprising a bottom spacer located between material of the vertical nanowire and the gate dielectric material.
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