CPC H10B 43/40 (2023.02) [H01L 29/40114 (2019.08); H01L 29/40117 (2019.08); H01L 29/495 (2013.01); H10B 41/27 (2023.02); H10B 41/30 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/30 (2023.02)] | 20 Claims |
1. A microelectronic device, comprising:
a first stack structure comprising first tiers each comprising a level of a first conductive material and a level of a first insulative material vertically neighboring the level of the first conductive material;
a second stack structure vertically overlying the first stack structure and comprising second tiers each comprising a level of a second conductive material and a level of a second insulative material, the second conductive material exhibiting a larger average grain size than the first conductive material; and
strings of memory cells each individually comprising a channel material and a memory material vertically extending through the first stack structure, the memory material terminating in a dielectric material between the first stack structure and the second stack structure.
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