US 12,170,296 B2
Image sensor with pixel separation structure
Seungjoon Lee, Busan (KR); Jung Bin Yun, Hwaseong-si (KR); Kyungho Lee, Suwon-si (KR); Jihun Kim, Suwon-si (KR); and Junghyung Pyo, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 1, 2021, as Appl. No. 17/491,705.
Claims priority of application No. 10-2021-0000249 (KR), filed on Jan. 4, 2021.
Prior Publication US 2022/0216250 A1, Jul. 7, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14605 (2013.01) [H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a semiconductor substrate that includes first, second, third, and fourth pixel regions, wherein each of the first through fourth pixel regions include first, second, third, and fourth photoelectric conversion sections; and
a pixel separation structure disposed in the semiconductor substrate, wherein the pixel separation structure separates the first through fourth pixel regions from each other,
wherein the second pixel region is spaced apart from the first pixel region in a first direction,
wherein the fourth pixel region is spaced apart from the first pixel region in a second direction, wherein the second direction intersects the first direction,
wherein the semiconductor substrate includes:
a plurality of first impurity sections, wherein each first impurity section of the plurality of first impurity sections is disposed on a corresponding central portion of each pixel region of the first through fourth pixel regions; and
a second impurity section disposed between the second pixel region and the fourth pixel region,
wherein the first impurity sections have a conductivity type that is different from a conductivity type of the second impurity section, and
wherein the second impurity section overlaps a space that is between ends of the pixel separation structure.