CPC H01L 23/5386 (2013.01) [G11C 5/025 (2013.01); G11C 5/06 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/53204 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 27/0688 (2013.01)] | 18 Claims |
12. A microelectronic device, comprising:
a stack structure comprising tiers each comprising a conductive level and an insulative level vertically neighboring the conductive level, each conductive level comprising:
a first conductive structure; and
a second conductive structure laterally neighboring the first conductive structure and comprising grains having a larger grain size than the first conductive structure; and
vertical strings of memory cells vertically extending through the stack structure.
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