US 12,169,773 B2
Optoelectronic synaptic memristor
Anping Huang, Beijing (CN); Yuhang Ji, Beijing (CN); Qin Gao, Beijing (CN); Mei Wang, Beijing (CN); and Zhisong Xiao, Beijing (CN)
Assigned to BEIHANG UNIVERSITY, BeiJing (CN)
Filed by BEIHANG UNIVERSITY, Beijing (CN)
Filed on Sep. 21, 2021, as Appl. No. 17/480,391.
Claims priority of application No. 202110891073.4 (CN), filed on Aug. 4, 2021.
Prior Publication US 2022/0036170 A1, Feb. 3, 2022
Int. Cl. G06N 3/067 (2006.01); H01L 29/06 (2006.01); H01L 31/0352 (2006.01)
CPC G06N 3/0675 (2013.01) [H01L 29/0673 (2013.01); H01L 31/035218 (2013.01); H01L 31/035227 (2013.01)] 6 Claims
OG exemplary drawing
 
1. An optoelectronic synaptic memristor, comprising: a bottom electrode layer, a porous structure layer modified with quantum dots, a two-dimensional material layer, a transparent top electrode layer, and a waveguide layer, which are arranged in sequence from top to bottom, wherein: a bottom of the two-dimensional material layer is attached on the porous structure layer modified with the quantum dots; and a top of the two-dimensional material layer is connected to the transparent top electrode layer;
the waveguide layer is a ridge waveguide for light conduction, comprising a wedge-shaped output terminal, wherein: through the wedge-shaped output end of the waveguide layer, light is vertically injected into the two-dimensional material layer and the porous structure layer modified with the quantum dots;
wherein the wedge-shaped output terminal has four inclined walls, wherein an inclination angle of each wall is 30-60°.