CPC H01L 29/0642 (2013.01) [H01L 21/763 (2013.01); H01L 29/0826 (2013.01); H01L 29/165 (2013.01); H01L 29/66242 (2013.01); H01L 29/7371 (2013.01)] | 20 Claims |
1. A structure comprising:
an isolation region comprising polycrystalline semiconductor material and embedded within a single crystalline substrate;
a heterojunction bipolar transistor above the isolation region; and
a deep trench isolation structure isolating the heterojunction bipolar transistor and contacting the isolation region;
shallow trench isolation structures within a region defined by the deep trench isolation structure; and
a sub-collector below the shallow trench isolation structures, above the isolation region and extending to and contacting the deep trench isolation structure.
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