CPC H10K 39/32 (2023.02) | 17 Claims |
1. An imaging element comprising a photoelectric conversion section including a first electrode, a photoelectric conversion layer including an organic material, and a second electrode that are stacked, wherein
an inorganic semiconductor material layer is formed between the first electrode and the photoelectric conversion layer, and
a value ΔEN is less than 1.695, the value ΔEN resulting from subtracting an average value ENcation of electronegativities of cationic species included in the inorganic semiconductor material layer from an average value ENanion of electronegativities of anionic species included in the inorganic semiconductor material layer.
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