CPC G21H 1/06 (2013.01) [H01L 31/03046 (2013.01)] | 9 Claims |
1. A device for producing electricity, comprising:
in a stacked configuration:
a GaAs substrate layer;
a back-surface field layer;
an InGaP base layer doped with a p-type dopant;
an InGaP emitter layer doped with an n-type dopant;
a window layer;
a radioisotope source disposed on an interposer layer; such that radioisotopes emitted by the radioisotope source impinge the window layer;
a first contact in electrical contact with the back-surface field layer or with the base layer;
a second contact in electrical contact with the window layer or with the emitter layer; and
wherein current is generated between the first and second contacts when connected to a load.
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