US 12,171,107 B2
Imaging element, stacked imaging element and solid-state imaging device, and method of manufacturing imaging element
Hiroshi Nakano, Tokyo (JP); and Toshiki Moriwaki, Tokyo (JP)
Assigned to Sony Group Corporation, Tokyo (JP)
Appl. No. 17/614,084
Filed by Sony Group Corporation, Tokyo (JP)
PCT Filed Apr. 30, 2020, PCT No. PCT/JP2020/018226
§ 371(c)(1), (2) Date Nov. 24, 2021,
PCT Pub. No. WO2020/241169, PCT Pub. Date Dec. 3, 2020.
Claims priority of application No. 2019-097458 (JP), filed on May 24, 2019.
Prior Publication US 2022/0231085 A1, Jul. 21, 2022
Int. Cl. H10K 39/32 (2023.01)
CPC H10K 39/32 (2023.02) 17 Claims
OG exemplary drawing
 
1. An imaging element comprising a photoelectric conversion section including a first electrode, a photoelectric conversion layer including an organic material, and a second electrode that are stacked, wherein
an inorganic semiconductor material layer is formed between the first electrode and the photoelectric conversion layer, and
a value ΔEN is less than 1.695, the value ΔEN resulting from subtracting an average value ENcation of electronegativities of cationic species included in the inorganic semiconductor material layer from an average value ENanion of electronegativities of anionic species included in the inorganic semiconductor material layer.