CPC H01L 23/49827 (2013.01) [H01L 21/76898 (2013.01); H01L 23/49838 (2013.01); H01L 24/16 (2013.01); H01L 2224/16146 (2013.01)] | 20 Claims |
1. A method, the method comprising:
receiving a first semiconductor substrate;
forming a plurality of openings that extend vertically through the first semiconductor substrate, wherein the openings are laterally disposed around a portion of the first semiconductor substrate, wherein forming the plurality of openings forms a plurality of semiconductor anchors laterally between the openings, and wherein the plurality of semiconductor anchors extend laterally between the portion of the first semiconductor substrate and a surrounding portion of the first semiconductor substrate; and
performing an oxidation process on the plurality of semiconductor anchors to convert the plurality of semiconductor anchors into a plurality of dielectric anchors.
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