CPC H01L 21/823857 (2013.01) [H01L 21/02236 (2013.01); H01L 21/02603 (2013.01); H01L 21/28185 (2013.01); H01L 21/31111 (2013.01); H01L 21/823807 (2013.01); H01L 27/092 (2013.01); H01L 29/0673 (2013.01); H01L 29/42364 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/516 (2013.01); H01L 29/66742 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09); H01L 29/78696 (2013.01); H01L 2029/42388 (2013.01)] | 20 Claims |
1. An apparatus comprising:
a first device having a first type of conductivity, the first device including:
a first stack of first semiconductor layers, wherein each first semiconductor layer of the first stack is separated from each other;
a first interfacial layer wrapped around and physically contacting each first semiconductor layer of the first stack;
a first dipole gate dielectric layer wrapping around and physically contacting the first interfacial layer wrapped around each first semiconductor layer of the first stack; and
a first portion of a first capping layer wrapping around and physically contacting the first dipole gate dielectric layer; and
a second device having a second type of conductivity, the second type of conductivity being opposite the first type of conductivity, the second device including:
a second stack of second semiconductor layers, wherein each second semiconductor layer of the second stack is separated from each other;
a second interfacial layer wrapping around and physically contacting each second semiconductor layer of the second stack;
a first non-dipole gate dielectric layer wrapping around and physically contacting the second interfacial layer wrapped around each second semiconductor layer of the second stack; and
a second portion of the first capping layer wrapping around and physically contacting the first non-dipole gate dielectric layer, wherein the first portion of the first capping layer is non-contiguous with an upwardly-facing surface of the second portion of the first capping layer.
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