CPC H01L 23/10 (2013.01) [H01L 27/0924 (2013.01)] | 20 Claims |
1. A semiconductor structure, comprising:
a circuit region disposed over a substrate, wherein the circuit region comprises first fins, second fins, n-type epitaxial structures over the first fins, and p-type epitaxial structures over the second fins; and
a seal ring region disposed over the substrate and completely surrounding the circuit region, wherein the seal ring region comprises fin rings extending completely around the circuit region, epitaxial rings disposed over and extending parallel to the fin rings, wherein all of the epitaxial rings over all of the fin rings in the seal ring region are p-type epitaxial rings.
|