US 12,170,301 B2
Pixel sensors and methods of forming the same
Li-Wen Huang, Changhua (TW); Chung-Liang Cheng, Changhua (TW); Ping-Hao Lin, Tainan (TW); and Kuo-Cheng Lee, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 22, 2024, as Appl. No. 18/583,923.
Application 18/583,923 is a continuation of application No. 18/152,369, filed on Jan. 10, 2023, granted, now 11,978,751.
Prior Publication US 2024/0234460 A1, Jul. 11, 2024
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14623 (2013.01) [H01L 27/14625 (2013.01); H01L 27/14634 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a small pixel detector (SPD) comprising:
a first portion of a first electrode,
an oxide layer over the first portion of the first electrode,
a metal layer over the oxide layer, and
a first portion of a second electrode directly on the metal layer,
wherein the first electrode and the second electrode are configured to cause oxygen atoms to migrate from the oxide layer to the metal layer; and
a large pixel detector (LPD) comprising:
a second portion of the first electrode,
a passivation layer over the second portion of the first electrode, and
a second portion of the second electrode directly on the passivation layer.