CPC G03F 1/82 (2013.01) [G03F 7/2002 (2013.01)] | 20 Claims |
1. A method, comprising,
forming a photomask;
selectively exposing a first photoresist layer disposed over a first substrate to actinic radiation using the photomask; and
applying a plasma to the photomask in a plasma processing chamber to remove contamination from a surface of the photomask.
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