CPC G01N 27/44791 (2013.01) [B01L 3/502715 (2013.01); B01L 3/50273 (2013.01); G01N 27/3278 (2013.01); G01N 33/48721 (2013.01); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02); B01L 2300/0645 (2013.01); B01L 2300/0887 (2013.01); B01L 2400/0421 (2013.01)] | 20 Claims |
1. A method of manufacturing a device for analyzing a molecule, the method comprising:
depositing a first conductive element on a surface of an insulating substrate;
depositing an insulating layer on a sidewall of the first conductive element;
ion beam etching at an angle the insulating layer on the sidewall of the first conductive element to form a tapered insulating layer;
depositing a second conductive element contacting the tapered insulating layer; and
planarizing at least one of the first conductive element or the second conductive element to expose the tapered insulating layer.
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