US 12,170,516 B2
Filters using transversly-excited film bulk acoustic resonators with frequency-setting dielectric layers
Viktor Plesski, Gorgier (CH); Soumya Yandrapalli, Lausanne (CH); Robert B. Hammond, Rockville, MD (US); Bryant Garcia, Mississauga (CA); Patrick Turner, Portola Valley, CA (US); Jesson John, Dublin, CA (US); and Ventsislav Yantchev, Sofia (BG)
Assigned to Murata Manufacturing Co., Ltd., Nagaokakyo (JP)
Filed by Murata Manufacturing Co., Ltd., Nagaokakyo (JP)
Filed on Sep. 28, 2023, as Appl. No. 18/476,865.
Application 18/476,865 is a continuation of application No. 17/317,754, filed on May 11, 2021, granted, now 11,870,424.
Application 17/317,754 is a continuation of application No. 17/109,812, filed on Dec. 2, 2020.
Application 17/109,812 is a continuation in part of application No. 16/689,707, filed on Nov. 20, 2019, granted, now 10,917,070, issued on Sep. 2, 2021.
Application 16/689,707 is a continuation of application No. 16/230,443, filed on Dec. 21, 2018, granted, now 10,491,192, issued on Nov. 26, 2019.
Claims priority of provisional application 62/753,815, filed on Oct. 31, 2018.
Claims priority of provisional application 62/748,883, filed on Oct. 22, 2018.
Claims priority of provisional application 62/741,702, filed on Oct. 5, 2018.
Claims priority of provisional application 62/701,363, filed on Jul. 20, 2018.
Claims priority of provisional application 62/685,825, filed on Jun. 15, 2018.
Prior Publication US 2024/0022234 A1, Jan. 18, 2024
Int. Cl. H03H 9/56 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H10N 30/87 (2023.01)
CPC H03H 9/568 (2013.01) [H03H 3/02 (2013.01); H03H 9/02015 (2013.01); H03H 9/02031 (2013.01); H03H 9/02062 (2013.01); H03H 9/02228 (2013.01); H03H 9/132 (2013.01); H03H 9/174 (2013.01); H03H 9/176 (2013.01); H03H 9/562 (2013.01); H03H 9/564 (2013.01); H03H 2003/023 (2013.01); H03H 9/02039 (2013.01); H10N 30/877 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A filter device comprising:
a substrate including a base and an intermediate dielectric layer;
a piezoelectric layer coupled to the substrate, the piezoelectric layer comprising a first diaphragm over a first cavity that at least partially extends in the intermediate dielectric layer of the substrate and a second diaphragm over a second cavity that at least partially extends in the intermediate dielectric layer of the substrate;
a first interdigital transducer (IDT) on a surface of the piezoelectric layer and having interleaved fingers on the first diaphragm;
a second interdigital transducer (IDT) on the surface of the piezoelectric layer and having interleaved fingers on the second diaphragm;
a first dielectric layer and between the interleaved fingers of the first IDT; and
a second dielectric layer between the interleaved fingers of the second IDT, wherein a thickness of the first dielectric layer is greater than a thickness of the second dielectric layer.