CPC H01L 29/42392 (2013.01) [H01L 29/0665 (2013.01); H01L 29/2003 (2013.01); H01L 29/66446 (2013.01); H01L 29/66545 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. A device comprising:
an n-type transistor comprising:
a first channel comprising a transition metal dichalcogenide;
a first dielectric layer over and contacting the first channel;
a second dielectric layer under and contacting the first channel;
a first metal source/drain region contacting first sidewalls of the first channel, the first dielectric layer, and the second dielectric layer; and
a first gate stack comprising a first portion over and contacting the first dielectric layer, and a second portion under and contacting the second dielectric layer.
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