US 12,170,857 B2
Pixel circuit adopting optically sensitive material to suppress dark current
Kazuya Yonemoto, Hsin-Chu County (TW)
Assigned to PIXART IMAGING INC., Hsin-Chu County (TW)
Filed by PixArt Imaging Inc., Hsin-Chu County (TW)
Filed on Nov. 1, 2023, as Appl. No. 18/385,920.
Application 18/385,920 is a continuation of application No. 17/873,161, filed on Jul. 26, 2022, granted, now 11,849,237.
Prior Publication US 2024/0064435 A1, Feb. 22, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H04N 25/77 (2023.01); H04N 25/63 (2023.01); H04N 25/75 (2023.01)
CPC H04N 25/77 (2023.01) [H04N 25/63 (2023.01); H04N 25/75 (2023.01)] 18 Claims
OG exemplary drawing
 
1. A pixel circuit, comprising:
an optically sensitive material (OSM) layer, configured to receive light to generate signal charges to be integrated into a node;
a P-well substrate;
a reset transistor, arranged within the P-well substrate, and having a source configured as the node;
an N-well region, arranged within the P-well substrate;
a readout transistor, arranged within the N-well region, and having a gate connected to the node; and
a row selection transistor, arranged within the N-well region, and coupled between the readout transistor and a readout line,
wherein the readout transistor and the row selection transistor are electrically separated from the P-well substrate by the N-well region, and
a drain of the reset transistor is configured to receive a reset voltage, which is arranged between +1 volt and −0.5 volt relative to a voltage of the P-well substrate to cause the readout transistor to operate within a linear region thereof.