CPC H01L 29/66666 (2013.01) [H01L 21/823487 (2013.01); H01L 29/7827 (2013.01); H01L 29/78642 (2013.01); H01L 21/823885 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a buried power rail (BPR) formed over a top surface of a substrate, the substrate including an opposing bottom surface;
a semiconductor structure formed over the BPR, the semiconductor structure being tube-shaped and extending along a vertical direction perpendicular to the substrate, the semiconductor structure further including a first source/drain (S/D) region over the BPR, a gate region over the first S/D region, and a second S/D region over the gate region;
a first S/D interconnect structure extending from the BPR and further into the semiconductor structure such that a top portion of the first S/D interconnect structure is surrounded by the first S/D region of the semiconductor structure;
a gate structure that includes (i) a gate oxide formed along an inner surface of the gate region and (ii) a gate electrode formed along sidewalls of the gate oxide in the gate region such that the gate electrode is surrounded by the gate region; and
a second S/D interconnect structure positioned over and coupled to the second S/D region.
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