CPC H01L 23/62 (2013.01) [H03K 17/0822 (2013.01); H03K 2217/0027 (2013.01)] | 17 Claims |
1. A semiconductor device comprising:
a first current terminal, a second current terminal, and a control terminal jointly configured to provide an electrically conductive current path from the first current terminal to the second current terminal via a channel region when a suitable bias voltage of a first polarity is applied to the control terminal; and
a temperature-sensitive current-limiting device integrally formed from semiconductor material of the control terminal, wherein the current-limiting device is configured to cause a reduction in an amount of electrical current flowing from the first current terminal to the second current terminal when a temperature of the device within the channel region exceeds a predetermined temperature limit.
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