CPC H01L 29/517 (2013.01) [H01L 29/513 (2013.01)] | 19 Claims |
1. A transistor comprising:
a channel region having a frontside and a backside;
a gate adjacent the frontside of the channel region with a gate insulator being between the gate and the channel region;
a charge-blocking region adjacent the gate;
a charge-storage material adjacent the charge-blocking region, the gate insulator being between the channel region and the charge-storage material;
an insulating material having net negative charge and having a first side and a second side, wherein the second side is opposing the first side and adjacent the backside of the channel region; and
a dielectric material adjacent the first side of the insulating material.
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