US 12,170,226 B2
Method for separating dies from a semiconductor substrate
Franz-Josef Pichler, Villach (AT); Benjamin Bernard, Woerth (DE); and Mario Stefenelli, Freiberg (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Mar. 28, 2024, as Appl. No. 18/620,327.
Claims priority of application No. 102023108751.7 (DE), filed on Apr. 5, 2023.
Prior Publication US 2024/0339361 A1, Oct. 10, 2024
Int. Cl. H01L 21/82 (2006.01); H01L 21/02 (2006.01); H01L 21/268 (2006.01); H01L 21/304 (2006.01); H01L 21/324 (2006.01); H01L 21/683 (2006.01); H01L 29/16 (2006.01)
CPC H01L 21/8213 (2013.01) [H01L 21/02118 (2013.01); H01L 21/268 (2013.01); H01L 21/304 (2013.01); H01L 21/324 (2013.01); H01L 21/6836 (2013.01); H01L 29/1608 (2013.01); H01L 2221/68309 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method for separating dies from a semiconductor substrate, the method comprising:
providing a semiconductor substrate comprising a plurality of dies adjoining to a first surface of the semiconductor substrate;
attaching the semiconductor substrate to a carrier via the first surface;
generating a plurality of first modifications in the semiconductor substrate by introducing laser radiation into an interior of the semiconductor substrate via a second surface of the semiconductor substrate, the second surface being opposite to the first surface, wherein the first modifications extend between the first surface and a vertical level in the interior of the semiconductor substrate, the vertical level being spaced from the second surface, and wherein the first modifications laterally surround the dies;
generating a plurality of second modifications in the semiconductor substrate by introducing laser radiation into the interior of the semiconductor substrate via the second surface of the semiconductor substrate, the second modifications sub-dividing the semiconductor substrate into a first part between the first surface and the second modifications, and a second part between the second surface and the second modifications, wherein the second modifications are generated at a vertical distance to the first modifications;
separating the first part of the semiconductor substrate from the second part of the semiconductor substrate along a first separation area defined by the second modifications; and
separating the dies from one another along a second separation area defined by the first modifications,
wherein the first modifications are generated after generating the second modifications,
wherein attaching the semiconductor substrate to the carrier via the first surface comprises attaching the semiconductor substrate to the carrier by a glue arranged between the first surface of the semiconductor substrate and the carrier,
wherein at least part of the carrier is shaped as a grid,
wherein grid lines of the grid and the first modifications are aligned to one another in a plan view.