CPC G11C 11/1675 (2013.01) [G11C 5/08 (2013.01); G11C 11/1673 (2013.01); H10B 61/10 (2023.02); H10B 61/20 (2023.02); H10N 50/10 (2023.02)] | 20 Claims |
1. A magnetic memory device, comprising:
a first conductor layer;
a second conductor layer;
a third conductor layer; and
a first memory cell of a three-terminal type that is connected to the first conductor layer, the second conductor layer, and the third conductor layer, the first memory cell including:
a fourth conductor layer including a first portion connected to the first conductor layer, a second portion connected to the second conductor layer, and a third portion that is connected to the third conductor layer,
a first magnetoresistance effect element connected between the third conductor layer and the fourth conductor layer,
a first switching element of a two-terminal-type that is connected between the second conductor layer and the fourth conductor layer, and
a second switching element of a two-terminal-type that is connected between the first conductor layer and the third conductor layer;
a fifth conductor layer;
a sixth conductor layer; and
a second memory cell of a three-terminal-type that is connected to the first conductor layer, the fifth conductor layer, and the sixth conductor layer, wherein
the fourth conductor layer includes a fourth portion that is connected to the fifth conductor layer and a fifth portion that is connected to the sixth conductor layer,
the second memory cell shares the fourth conductor layer with the first memory cell and includes:
a second magnetoresistance effect element connected between the sixth conductor layer and the fourth conductor layer,
a third switching element of a two-terminal-type that is connected between the fifth conductor layer and the fourth conductor layer, and
a fourth switching element of a two-terminal-type that is connected between the sixth conductor layer and the second magnetoresistance effect element, and
the second switching element is connected between the third conductor layer and the first magnetoresistance effect element.
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