CPC H01L 21/8221 (2013.01) [H01L 21/761 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 21/823878 (2013.01); H01L 27/0688 (2013.01); H01L 27/0922 (2013.01); H01L 27/1207 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01)] | 20 Claims |
1. A device comprising:
a bottom transistor comprising:
a first channel layer;
first source/drain epitaxial structures on opposite sides of the first channel layer; and
a first gate structure around the first channel layer;
a top transistor over the bottom transistor and comprising:
a second channel layer;
second source/drain epitaxial structures on opposite sides of the second channel layer; and
a second gate structure around the second channel layer; and
an epitaxial isolation structure between and in contact with one of the first source/drain epitaxial structures and one of the second source/drain epitaxial structures, such that said one of the first source/drain epitaxial structures is electrically isolated from said one of the second source/drain epitaxial structures, wherein the epitaxial isolation structure comprises first epitaxial layers of a first conductivity type interposed by second epitaxial layers of a second conductivity type different from the first conductivity type.
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