CPC G06N 3/0675 (2013.01) [H01L 29/0673 (2013.01); H01L 31/035218 (2013.01); H01L 31/035227 (2013.01)] | 6 Claims |
1. An optoelectronic synaptic memristor, comprising: a bottom electrode layer, a porous structure layer modified with quantum dots, a two-dimensional material layer, a transparent top electrode layer, and a waveguide layer, which are arranged in sequence from top to bottom, wherein: a bottom of the two-dimensional material layer is attached on the porous structure layer modified with the quantum dots; and a top of the two-dimensional material layer is connected to the transparent top electrode layer;
the waveguide layer is a ridge waveguide for light conduction, comprising a wedge-shaped output terminal, wherein: through the wedge-shaped output end of the waveguide layer, light is vertically injected into the two-dimensional material layer and the porous structure layer modified with the quantum dots;
wherein the wedge-shaped output terminal has four inclined walls, wherein an inclination angle of each wall is 30-60°.
|