US 12,170,322 B2
Devices including stacked nanosheet transistors
Jeonghyuk Yim, Halfmoon, NY (US); Byounghak Hong, Latham, NY (US); Jungsu Kim, Hwaseong-si (KR); and Kang-ill Seo, Albany, NY (US)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 19, 2021, as Appl. No. 17/504,720.
Application 17/504,720 is a continuation in part of application No. 17/380,999, filed on Jul. 20, 2021, granted, now 11,843,001.
Claims priority of provisional application 63/232,280, filed on Aug. 12, 2021.
Claims priority of provisional application 63/188,501, filed on May 14, 2021.
Prior Publication US 2022/0367658 A1, Nov. 17, 2022
Int. Cl. H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/42392 (2013.01) [H01L 29/0665 (2013.01); H01L 29/66742 (2013.01); H01L 29/786 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A nanosheet transistor device comprising:
a lower nanosheet transistor having a first nanosheet width;
an upper tri-gate nanosheet transistor on an upper surface of the lower nanosheet transistor and having a second nanosheet width that is narrower than the first nanosheet width; and
an insulation region that comprises oxygen and is on the upper surface of the lower nanosheet transistor and a sidewall of the upper tri-gate nanosheet transistor.