CPC G01N 21/9503 (2013.01) [C25D 5/50 (2013.01); C25D 17/001 (2013.01); G06T 7/0008 (2013.01); H01L 21/67253 (2013.01); H04N 7/188 (2013.01); G06T 2207/30148 (2013.01)] | 20 Claims |
1. A semiconductor apparatus, comprising:
a transfer chamber, configured to interface with an electroplating apparatus;
an annealing station, arranged to anneal a wafer;
a robot arm, arranged to transfer the wafer from the transfer chamber to the annealing station;
an edge detector, disposed over a predetermined location between the transfer chamber and the annealing station, for monitoring at least one portion of an edge bevel removal area of the wafer when the robot arm is carrying the wafer to pass through the predetermined location, wherein the at least one portion of the edge bevel removal area comprises a first portion and a second portion different from the first portion, and the edge detector comprises:
a first charge-coupled device (CCD) sensor, wherein when the robot arm is carrying the wafer to pass through the predetermined location, the first CCD sensor is located over the first portion of the edge bevel removal area, and arranged to capture an image of the first portion of the edge bevel removal area; and
a second CCD sensor, wherein when the robot arm is carrying the wafer to pass through the predetermined location, the second CCD sensor is located over the second portion of the edge bevel removal area, and arranged to capture an image of the second portion of the edge bevel removal area.
|