CPC H01L 29/785 (2013.01) [H01L 21/28518 (2013.01); H01L 21/768 (2013.01); H01L 29/401 (2013.01); H01L 29/41791 (2013.01)] | 20 Claims |
1. A method, comprising:
forming a first opening through one or more first dielectric layers and to a source/drain region;
forming a silicon nitride (SixNy) layer on sidewalls of the one or more first dielectric layers in the first opening;
performing, after forming the silicon nitride layer, a plasma-based deposition operation to selectively form a titanium silicide (TiSix) layer on a top surface of the source/drain region in the first opening;
filling the first opening with a conductive material to form a source/drain contact over the silicon nitride layer and over the titanium silicide layer;
forming one or more second dielectric layers above the one or more first dielectric layers;
forming a second opening through the one or more second dielectric layers and to the source/drain contact; and
filling the second opening with the conductive material to form a source/drain interconnect structure connected to the source/drain contact.
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