US 12,168,605 B2
Semiconductor device package and a method of manufacturing the same
Hsu-Liang Hsiao, Kaohsiung (TW); Lu-Ming Lai, Kaohsiung (TW); Ching-Han Huang, Kaohsiung (TW); and Chia-Hung Shen, Kaohsiung (TW)
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung (TW)
Filed by Advanced Semiconductor Engineering, Inc., Kaohsiung (TW)
Filed on May 25, 2021, as Appl. No. 17/330,245.
Application 17/330,245 is a continuation of application No. 15/599,377, filed on May 18, 2017, granted, now 11,014,806.
Prior Publication US 2021/0276860 A1, Sep. 9, 2021
Int. Cl. B81C 3/00 (2006.01); B81C 1/00 (2006.01)
CPC B81C 3/001 (2013.01) [B81C 1/00269 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0315 (2013.01); B81B 2203/033 (2013.01)] 16 Claims
OG exemplary drawing
 
12. A semiconductor device package, comprising:
a substrate comprising a core layer and an insulation layer;
a MEMS device disposed on the substrate; and
a semiconductor device disposed side by side with the MEMS device on the substrate,
wherein a bottom surface of the insulation layer is higher than a top surface of the core layer, and the MEMS device covers the top surface of the core layer,
wherein a top surface of the MEMS device is higher than a top surface of the substrate,
wherein the semiconductor device is electrically connected to a conductive layer of the substrate through a first bonding wire, and a level of a first end of the first bonding wire is lower than a level of a membrane of the MEMS device and higher than a bottom surface of the MEMS device, and wherein a level of a second end of the first bonding wire is lower than the bottom surface of the MEMS device, the first end of the first bonding wire is more adjacent to the semiconductor device than to the conductive layer.