CPC H01L 21/823431 (2013.01) [H01L 21/823821 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a first fin and a second fin disposed adjacent to a substrate, each of the first fin and the second fin being silicon;
a first isolation region interposed between the first fin and the second fin;
a third fin and a fourth fin disposed adjacent to the substrate, each of the third fin and the fourth fin being silicon-germanium;
a second isolation region interposed between the third fin and the fourth fin;
a first semiconductor layer disposed along the first fin and the second fin, the first semiconductor layer being a same composition as the first fin and the second fin, the first semiconductor layer physically contacting the first isolation region;
a first gate dielectric disposed over the first semiconductor layer;
a first gate disposed over the first gate dielectric;
a second semiconductor layer disposed adjacent to the third fin and the fourth fin, the second semiconductor layer comprising silicon-germanium, the second semiconductor layer physically contacting the second isolation region;
a second gate dielectric disposed over the second semiconductor layer; and
a second gate disposed over the second gate dielectric.
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