US 12,170,314 B2
Semiconductor device and manufacturing method thereof
Chun Hsiung Tsai, Xinpu Township (TW); Chih-Hsin Ko, Fongshan (TW); Clement Hsing Jen Wann, Carmel, NY (US); and Ya-Yun Cheng, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 12, 2024, as Appl. No. 18/411,667.
Application 18/411,667 is a continuation of application No. 18/097,057, filed on Jan. 13, 2023, granted, now 11,916,107.
Application 18/097,057 is a continuation of application No. 16/856,817, filed on Apr. 23, 2020, granted, now 11,557,650, issued on Jan. 17, 2023.
Application 16/856,817 is a continuation in part of application No. 16/731,767, filed on Dec. 31, 2019, granted, now 11,393,713, issued on Jul. 19, 2022.
Claims priority of provisional application 62/955,871, filed on Dec. 31, 2019.
Claims priority of provisional application 62/837,519, filed on Apr. 23, 2019.
Prior Publication US 2024/0213314 A1, Jun. 27, 2024
Int. Cl. H01L 29/06 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/0653 (2013.01) [H01L 29/66553 (2013.01); H01L 29/66568 (2013.01); H01L 21/26513 (2013.01); H01L 21/30604 (2013.01); H01L 21/3065 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a high-k dielectric layer extending in a first direction disposed over a first region of a substrate;
a metal layer extending in the first direction disposed over the high-k dielectric layer;
a doped epitaxial layer disposed in a second region of the substrate on opposing sides of the metal layer along a second direction crossing the first direction;
an insulating layer disposed in the substrate outside the doped epitaxial layer at a first main surface of the substrate along the second direction;
an impurity containing region containing an impurity in an amount higher than the substrate disposed along a third direction relative to the doped epitaxial layer, wherein the third direction crosses the first and second directions,
wherein the insulating layer extends along the second direction between the doped epitaxial layer and the impurity containing region, and extends along the third direction into the substrate a further distance from the first main surface than the impurity containing region, and
a void is formed in the insulating layer between the doped epitaxial layer and the impurity containing region.