CPC H01L 21/823807 (2013.01) [H01L 29/66545 (2013.01); H01L 21/76829 (2013.01); H01L 21/823878 (2013.01); H01L 29/154 (2013.01)] | 15 Claims |
1. A processing method for removing a dummy material, the method comprising:
forming a liner over a superlattice structure on a dummy material, the superlattice structure comprising a plurality of channel layers and a corresponding plurality of semiconductor material layers alternatingly arranged in a plurality of stacked pairs extending between a source trench and a drain trench, the semiconductor material layers comprising silicon (Si), the channel layers comprising of silicon-germanium (SiGe), and the dummy material comprising silicon doped with a dopant selected from one or more of boron, phosphorus, arsenic, or germanium, the concentration of dopant in a range of from 2 atomic percent to 10 atomic percent;
removing the liner from the dummy material; and
removing the dummy material without substantially affecting the channel layers and the semiconductor material layers covered by the liner.
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