US 12,170,154 B2
Series and/or parallel connected alpha, beta, and gamma voltaic cell devices
Peter Cabauy, Homestead, FL (US); Larry C. Olsen, Homestead, FL (US); Bret J. Elkind, Homestead, FL (US); and Jesse Grant, Homestead, FL (US)
Assigned to CITY LABS, INC., Homestead, FL (US)
Filed by CITY LABS, INC., Homestead, FL (US)
Filed on Jan. 15, 2024, as Appl. No. 18/412,728.
Application 18/412,728 is a continuation of application No. 17/937,575, filed on Oct. 3, 2022, granted, now 11,875,907.
Application 17/937,575 is a continuation of application No. 17/227,756, filed on Apr. 12, 2021, granted, now 11,462,337, issued on Oct. 4, 2022.
Application 17/227,756 is a continuation of application No. 15/602,078, filed on May 22, 2017, granted, now 10,978,215, issued on Apr. 13, 2021.
Claims priority of provisional application 62/339,943, filed on May 22, 2016.
Prior Publication US 2024/0242853 A1, Jul. 18, 2024
Int. Cl. G21H 1/06 (2006.01); H01L 31/0304 (2006.01)
CPC G21H 1/06 (2013.01) [H01L 31/03046 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A device for producing electricity, comprising:
in a stacked configuration:
a GaAs substrate layer;
a back-surface field layer;
an InGaP base layer doped with a p-type dopant;
an InGaP emitter layer doped with an n-type dopant;
a window layer;
a radioisotope source disposed on an interposer layer; such that radioisotopes emitted by the radioisotope source impinge the window layer;
a first contact in electrical contact with the back-surface field layer or with the base layer;
a second contact in electrical contact with the window layer or with the emitter layer; and
wherein current is generated between the first and second contacts when connected to a load.