CPC H01L 25/0652 (2013.01) [H01L 21/6835 (2013.01); H01L 23/562 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/50 (2013.01); H01L 2221/68354 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06586 (2013.01); H01L 2924/3511 (2013.01)] | 20 Claims |
1. An integrated circuit package, comprising:
an interposer structure having an interposer bonding dielectric layer, interposer bonding pads, and a redistribution layer structure disposed below the interposer bonding dielectric layer, wherein the interposer bonding dielectric layer laterally surrounds the interposer bonding pads;
a first die stack, comprising a plurality of first die structures, wherein a first die structure of the first die stack facing the interposer structure has a first bonding pad, and a first bonding dielectric layer surrounding the first bonding pad, the first bonding pad is connected to a first one of the interposer bonding pads, and the first bonding dielectric layer is connected to the interposer bonding dielectric layer;
a bulk die, located aside the first die stack, wherein the bulk die has a second bonding pad, and a second bonding dielectric layer surrounding the second bonding pad, the second bonding pad is connected to a second one of the interposer bonding pads, and the second bonding dielectric layer is connected to the interposer bonding dielectric layer; and
a bulk cover member disposed over the first die stack and the bulk die,
wherein a first adhesive layer is disposed between the bulk cover member and the first die stack, a second adhesive layer is disposed between the bulk cover member and the bulk die, and a sidewall of the first die stack is flush with a sidewall of the first adhesive layer,
wherein the bulk cover member is a semiconductor member and is in contact with a dielectric encapsulation inserted between the first adhesive layer and the second adhesive layer.
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