CPC H01L 21/823481 (2013.01) [H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01)] | 20 Claims |
1. A method of making a semiconductor device, comprising:
forming a first semiconductor fin and a second semiconductor fin over a substrate that both extend along a first direction;
forming a dielectric fin that extends along the first direction and is disposed between the first and second semiconductor fins, wherein the dielectric fin has a first width along a second direction perpendicular to the first direction;
forming a dummy gate structure that extends along the second direction and straddles the first and second semiconductor fins and the dielectric fin;
comparing the first width with a predefined threshold;
if the first width is greater than the predefined threshold, removing a first portion of the dummy gate structure over the dielectric fin to form a first trench that has a second width along the second direction, wherein the second width is less than the first width;
if the first width is less than or equal to the predefined threshold, removing a second portion of the dummy gate structure over the dielectric fin to form a second trench that has a third width along the second direction, wherein the third width is equal to the first width; and
filling the first trench or the second trench with a first dielectric material.
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