US 12,170,305 B2
Flat panel detector, driving method, driving device and flat panel detection device
Shuai Xu, Beijing (CN); Ye Zhang, Beijing (CN); Binbin Xu, Beijing (CN); and Bin Zhao, Beijing (CN)
Assigned to Beijing BOE Sensor Technology Co., Ltd., Beijing (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
Filed by Beijing BOE Sensor Technology Co., Ltd., Beijing (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
Filed on Sep. 16, 2021, as Appl. No. 17/477,325.
Claims priority of application No. 202110023055.4 (CN), filed on Jan. 8, 2021.
Prior Publication US 2022/0223644 A1, Jul. 14, 2022
Int. Cl. H01L 27/146 (2006.01); G01T 1/24 (2006.01); H04N 5/32 (2023.01); H04N 25/50 (2023.01)
CPC H01L 27/14659 (2013.01) [G01T 1/24 (2013.01); H01L 27/14614 (2013.01); H04N 5/32 (2013.01); H04N 25/50 (2023.01)] 14 Claims
OG exemplary drawing
 
1. A flat panel detector, comprising: a base substrate, and a plurality of detection units located on the base substrate, wherein each of the detection units comprises a photodiode and a detection transistor; and
the flat panel detector further comprises: a compensation semiconductor material layer, wherein the compensation semiconductor material layer comprises a plurality of compensation structures mutually spaced, each detection transistor is correspondingly provided with a compensation structure, and the compensation structure is located between a gate and a gate insulating layer of the corresponding detection transistor; wherein the compensation structure surrounds the gate;
wherein a material of the gate comprises metal; and a material of the compensation semiconductor material layer comprises: a doped P-type semiconductor material;
wherein the gate is in direct contact with the compensation semiconductor material layer; a work function of the compensation semiconductor material layer is larger than a work function of the gate.