CPC B81C 1/00246 (2013.01) [G01J 5/024 (2013.01); G01J 5/12 (2013.01); B81B 7/0006 (2013.01); B81B 2201/0207 (2013.01); B81C 2203/0714 (2013.01); B81C 2203/0742 (2013.01); G01J 2005/123 (2013.01)] | 20 Claims |
1. A method for forming a device comprising:
providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region with CMOS components
forming a BE dielectric over the CMOS components, wherein the BE dielectric comprises multiple interconnect and via levels with interconnects and via contacts for interconnecting the CMOS components;
forming a MEMS level on the BE dielectric, wherein the MEMS level comprises a MEMS region with a MEMS component, the MEMS component includes recrystallized polysilicon MEMS structures, wherein the MEMS level occupies a portion of the BE dielectric;
forming a substrate sealing ring on the BE dielectric surrounding the MEMS level;
providing a cap having a cap inner surface and a cap outer surface, wherein the cap inner surface includes a cap sealing ring; and
bonding the cap sealing ring of the cap to the substrate sealing ring on the BE dielectric to hermetically seal the MEMS level.
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