US 12,171,147 B2
Semiconductor-superconductor hybrid device and its fabrication
Geoffrey Charles Gardner, West Lafayette, IN (US); Asbjørn Cennet Cliff Drachmann, Copenhagen (DK); Charles Masamed Marcus, Copenhagen (DK); and Michael James Manfra, West Lafayette, IN (US)
Assigned to Microsoft Technology Licensing, LLC, Redmond, WA (US)
Filed by Microsoft Technology Licensing, LLC, Redmond, WA (US)
Filed on Dec. 23, 2021, as Appl. No. 17/561,330.
Application 17/561,330 is a division of application No. 16/796,671, filed on Feb. 20, 2020, granted, now 11,211,543.
Claims priority of provisional application 62/944,093, filed on Dec. 5, 2019.
Prior Publication US 2022/0149262 A1, May 12, 2022
Int. Cl. H10N 60/01 (2023.01); H10N 60/10 (2023.01); H10N 60/12 (2023.01); H10N 60/80 (2023.01); H10N 60/85 (2023.01)
CPC H10N 60/01 (2023.02) [H10N 60/0156 (2023.02); H10N 60/0912 (2023.02); H10N 60/10 (2023.02); H10N 60/12 (2023.02); H10N 60/805 (2023.02); H10N 60/85 (2023.02); H10N 60/128 (2023.02)] 21 Claims
OG exemplary drawing
 
1. A semiconductor-superconductor hybrid device, comprising:
a semiconductor component;
a first superconductor component over a first portion of the semiconductor component, the first superconductor component comprising a first superconductor material;
a second superconductor component on the first superconductor component, the second superconductor component comprising a second superconductor material different from the first superconductor material; and
a passivating layer over a second portion of the semiconductor component, the passivating layer comprising an oxide of the first superconductor material.